1PS76SB17

1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table 1: Product overview Package Philips 1PS66SB17 1PS76SB17 1PS79SB17 SOT666 SOD323 SOD523 JEITA SC-76 SC-79 triple isolated diode single diode single diode Configuration Type number 1.2 Features s Very low diode capacitance s Very low forward voltage s Very small SMD plastic packages 1.3 Applications s Digital applications: x Ultra high-speed switching x Clamping circuits. s RF applications: x Diode ring mixer x RF detector x RF voltage doubler 1.4 Quick reference data Table 2: Symbol IF VR Cd Quick reference data Parameter continuous forward current continuous reverse voltage diode capacitance Conditions Min Typ 0.8 Max 30 4 1 Unit mA V pF Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 2. Pinning information Table 3: Pin 1 2 Pinning Description cathode anode [1] Simplified outline Symbol SOD323 (SC-76); SOD523 (SC-79) 1 1 001aab540 2 sym001 2 SOT666 1 2 3 4 5 6 [1] anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) 1 2 3 sym046 6 5 4 6 5 4 cathode (diode 2) cathode (diode 1) The marking bar indicates the cathode. 1 2 3 3. Ordering information Table 4: Ordering information Package Name 1PS66SB17 1PS76SB17 1PS79SB17 SC-76 SC-79 Description plastic surface mounted package; 6 leads plastic surface mounted package; 2 leads plastic surface mounted package; 2 leads Version SOT666 SOD323 SOD523 Type number 4. Marking Table 5: Marking codes Marking code N2 S7 T2 Type number 1PS66SB17 1PS76SB17 1PS79SB17 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VR IF continuous reverse voltage continuous forward current Conditions Min Max 4 30 Unit V mA 9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 2 of 8 Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode Table 6: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Tamb Tstg junction temperature ambient temperature storage temperature Conditions Min −65 −65 Max 150 +150 +150 Unit °C °C °C 6. Thermal characteristics Table 7: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient; SOD323 SOD523 SOT666 [1] Conditions in free air [1] Min Typ Max Unit [2] [3] [4] - - 450 450 700 K/W K/W K/W For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. Refer to SOD323 (SC-76) standard mounting conditions. Refer to SOD523 (SC-79) standard mounting conditions. Refer to SOT666 standard mounting conditions. [2] [3] [4] 7. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF Parameter forward voltage Conditions see Figure 1; IF = 0.1 mA IF = 1 mA IF = 10 mA IR Cd reverse current diode capacitance VR = 3 V; see Figure 2 see Figure 3; VR = 0 V; f = 1 MHz VR = 0.5 V; f = 1 MHz [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [1] Min - Typ 300 360 470 0.8 0.65 Max 350 450 600 250 1 - Unit mV mV mV nA pF pF 9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 3 of 8 Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 102 IF (mA) 10 006aaa077 IR (nA) 105 104 103 102 (1) 006aaa078 (2) (1) (2) (3) (4) 1 10 1 (3) 10−1 10−1 10−2 (4) 10−2 0 0.2 0.4 0.6 VF (V) 0.8 10−3 0 1 2 3 VR (V) 4 (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values. Fig 2. Reverse current as a function of reverse voltage; typical values. mlc797 0.8 Cd (pF) 0.7 0.6 0.5 0.4 0 1 2 3 VR (V) 4 Tamb = 25 °C; f = 1 MHz Fig 3. Diode capacitance as a function of reverse voltage; typical values. 9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 4 of 8 Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 8. Package outline 0.85 0.75 1 0.65 0.58 1.35 1.15 1 0.45 0.15 1.1 0.8 1.65 1.25 1.55 1.15 2.7 2.3 1.8 1.6 2 0.34 0.26 Dimensions in mm 0.17 0.11 02-12-13 Dimensions in mm 2 0.40 0.25 0.25 0.10 03-12-17 Fig 4. Package outline SOD523 (SC-79) 1.7 1.5 6 5 Fig 5. Package outline SOD323 (SC-76) 0.6 0.5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 1 0.5 1 Dimensions in mm 2 3 0.27 0.17 0.18 0.08 04-11-08 Fig 6. Package outline SOT666 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number 1PS66SB17 1PS76SB17 1PS79SB17 [1] Package SOT666 SOD323 SOD523 Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -115 -115 4000 -115 10000 -135 -135 For further information and the availability of packing methods, see Section 14. 9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 5 of 8 Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 10. Revision history Table 10: Revision history Release date Data sheet status 20050404 Product data sheet Change notice Doc. number Supersedes 9397 750 14587 1PS76SB17_1 PS79SB17_5 9397 750 13733 1PS76SB17_4 9397 750 12618 1PS76SB17_3 9397 750 10174 1PS76SB17_2 9397 750 05893 1PS76SB17_1 9397 750 01342 Document ID 1PSXSB17_6 Modifications: 1PS76SB17_1PS79SB17_5 1PS76SB17_4 1PS76SB17_3 1PS76SB17_2 1PS76SB17_1 • Type number 1PS66SB17 added Product data sheet Product data sheet Product data sheet - 20041028 20040126 20020809 19990525 19961014 Preliminary data sheet Preliminary data sheet - 9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 6 of 8 Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 7 of 8 Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Packing information. . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 2 2 2 2 3 3 5 5 6 7 7 7 7 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 4 April 2005 Document number: 9397 750 14587 Published in The Netherlands