L125

polyfet rf devices L125 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 3.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 55 TYP 15.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 28.0 V, F = 1,000 MHz Idq = 0.40 A, Vds = 28.0 V, F = 1,000 MHz η VSWR Relative Idq = 0.40 A, Vds = 28.0 V, F = 1,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 0.8 0.90 5.50 30.0 1.0 15.0 MIN 65 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.10 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.10 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 2.50 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com L125 POUT VS PIN GRAPH L125 POUT VS PIN F=1000 MHZ; IDQ=0.4A; VDS=28V 100 CAPACITANCE VS VOLTAGE L2B 1 DIE CAPACITANCE 22 20 18 16 14 12 10 8 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 POUT 16.00 Ciss 14.00 10 Coss 12.00 1 Crss Efficiency = 55% 10.00 8.00 2 GAIN 0.1 0 5 10 15 20 25 30 PIN IN WATTS VDS IN VOLTS IV CURVE L2A 1 DICE IV 6 100 ID & GM VS VGS L 2B 1 DIE ID, GM vs VG 5 4 ID IN AMPS 10 ID 3 2 1 1 GM 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 vg=10v 16 18 vg=12v 20 0.1 0 2 4 6 8 10 12 14 Vgs in Volts S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com