MMST5551

SEMICONDUCTOR TECHNICAL SPECIFICATION R ECTRON MMST5551 SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.2 A * Collector-base voltage V(BR)CBO: 160 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.052(1.33) 0.050(1.27) 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 150 -55 to +150 UNITS mW o o o C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R θJA VF MIN. TYP. MAX. 625 UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1.0mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = 100 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 µ Adc, I C = 0) Collector Cutoff Current (V CB = 120Vdc, I E = 0) Emitter Cutoff Current (V EB = 3Vdc, I C = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 160 180 5 50 50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (I C = 1mAdc, V CE = 5Vdc) (I C = -10mAdc, V CE = 5Vdc) (I C = 50mAdc, V CE = 5Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1mAdc) (I C = 50mAdc, I B = 5mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1mAdc) (I C = 50mAdc, I B = 5mAdc) VCE(sat) hFE 80 80 30 VBE(sat) 250 0.15 Vdc 0.2 1 1 Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 10Vdc, f= 100MHz) Output Capacitance (V CB = 10Vdc, I E = 0, f= 1.0MHz) Noise figure (I C = 0.2mAdc, V CE = 5Vdc, f= 1.0kHz,Rg=10 Ω) fT Cob NF 100 300 6 8 MHz pF dB RECTRON