2SK1307

2SK1307 Silicon N Channel MOS FET REJ03G0926-0200 (Previous: ADE-208-1265) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 23 S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch *1 Ratings 100 ±20 20 80 20 35 150 –55 to +150 Unit V V A A A W *2 Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 ±20 — — 1.0 — — 10 — — — — — — — — — Typ — — — — — 0.065 0.085 16 1300 540 160 12 100 300 150 1.3 300 Max — — ±10 250 2.0 0.085 0.12 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 50 A/µs Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 V * 3 ID = 10 A, VGS = 4 V * ID = 10 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 10 A, VGS = 10 V, RL = 3 Ω 3 3 Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1307 Main Characteristics Power vs. Temperature Derating 60 100 Maximum Safe Operation Area Channel Dissipation Pch (W) 10 Drain Current ID (A) 30 10 PW = µs 0 µs 40 ) ) ot °C Sh 25 = (1 s s m m (T C 1 n t io ra pe 10 3 1.0 0.3 0.1 1 D C 10 O 20 Operation in this Area is Limited by RDS (on) Ta = 25°C 3 10 30 100 300 1,000 0 50 100 150 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 Typical Transfer Characteristics 20 10 V 7V 5V Pulse Test 4V VDS = 10 V Pulse Test Drain Current ID (A) 30 Drain Current ID (A) 40 16 3.5 V 12 20 8 75°C TC = 25°C –25°C 3V 10 VGS = 2.5 V 4 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Drain to Source Saturation Voltage VDS (on) (V) 2.0 1.6 Pulse Test ID = 20 A 0.2 Pulse Test VGS = 4 V 10 V 1.2 0.1 0.05 0.8 10 A 5A 0.02 0.01 0.005 2 5 10 20 50 100 200 0.4 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SK1307 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 0.20 Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current 50 –25°C TC = 25°C 75°C 0.16 Pulse Test ID = 20 A 10 A 20 10 5 0.12 VGS = 4 V 5A 20 A 5 A, 10 A 0.08 VGS = 10 V 2 1 0.5 0.2 0.04 VDS = 10 V Pulse Test 0 –40 0 40 80 120 160 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) Body to Drain Diode Reverse Recovery Time 1000 10000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 500 Capacitance C (pF) Ciss 1000 Coss 200 100 50 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 1.0 2 5 10 20 50 Crss 100 20 10 0.5 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) 100 VDS VDD = 25 V 50 V 80 V 20 1000 Switching Characteristics Gate to Source Voltage VGS (V) Switching Time t (ns) 80 16 500 200 100 td(off) 60 VGS VDD = 80 V 50 V ID = 20 A 25 V 20 40 60 80 12 tf tr 40 8 50 20 10 0.5 20 4 VGS = 10 V, VDD = 30 V PW = 2 µs, duty < 1 % • • td(on) 1.0 2 5 10 20 50 0 0 100 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 6 2SK1307 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test 12 10 V 5V 8 4 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ulse P hot 1S 100 µ 1m 10 m 100 m θch–c (t) = γS (t) • θch–c θch–c = 3.57°C/W, TC = 25°C PDM 0.03 PW T 1 10 D = PW T 0.01 10 µ Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout 50 Ω Vin = 10 V . VDD = 30 V . td(on) Vin 10 % Waveforms 90 % 10 % 90 % tr 90 % td(off) 10 % tf Rev.2.00 Sep 07, 2005 page 5 of 6 2SK1307 Package Dimensions JEITA Package Code SC-67 RENESAS Code PRSS0003AD-A Package Name TO-220FM / TO-220FMV MASS[Typ.] 1.8g Unit: mm 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK1307-E 500 pcs Quantity Box (Sack) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 14.0 ± 1.0 17.0 ± 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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