BCR8CS-12LA

BCR8CS-12LA Triac Medium Power Use REJ03G0338-0300 Rev.3.00 Nov 30, 2007 Features • IT (RMS) : 8 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AB-A (Package name: TO-220S) 4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 3 2 3 1 Applications Solid state relay, hybrid IC Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V REJ03G0338-0300 Page 1 of 6 Rev.3.00 Nov 30, 2007 BCR8CS-12LA Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Ratings 8 80 26 5 0.5 10 2 – 40 to +125 – 40 to +125 1.2 Unit A A A2s W W V A °C °C g Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 30Note6 30Note6 30Note6 — 2.0 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Note4 Tj = 125°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c REJ03G0338-0300 Page 2 of 6 Rev.3.00 Nov 30, 2007 BCR8CS-12LA Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) Tj = 125°C Tj = 25°C On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 3 2 VGM = 10V Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 PG(AV) = 0.5W PGM = 5W IGM = 2A Typical Example Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 IRGT III VGT = 1.5V IRGT I, IFGT I IFGT I IRGT I, IRGT III VGD = 0.2V 10 –1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example 0 20 40 60 80 100 120 140 Junction Temperature (°C) Conduction Time (Cycles at 60Hz) REJ03G0338-0300 Page 3 of 6 Rev.3.00 Nov 30, 2007 BCR8CS-12LA Allowable Case Temperature vs. RMS On-State Current 160 140 Maximum On-State Power Dissipation 16 On-State Power Dissipation (W) 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 12 14 16 Curves apply regardless of conduction angle Case Temperature (°C) 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) Ambient Temperature (°C) All fins are black painted 140 aluminum and greased 120 100 80 60 40 20 0 0 2 4 6 8 140 120 100 80 60 40 20 0 0 0.5 1.0 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 10 12 14 16 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 1.5 2.0 2.5 3.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Repetitive Peak Off-State Current vs. Junction Temperature 7 Typical Example 5 3 2 Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 4 3 2 105 Typical Example 104 7 5 3 2 102 7 5 4 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) REJ03G0338-0300 Page 4 of 6 Rev.3.00 Nov 30, 2007 BCR8CS-12LA Latching Current vs. Junction Temperature 103 7 5 3 2 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 Latching Current (mA) Distribution 102 7 5 3 2 T2+, G– Typical Example 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 0 40 80 120 160 100 –40 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 Commutation Characteristics Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 101 7 5 3 2 100 70 10 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 125°C III Quadrant 100 80 60 40 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz Minimum Characteristics Value I Quadrant I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 III Quadrant 23 5 7 101 23 5 7 102 Rate of Rise of Off-State Voltage (V/µs) Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Characteristics Test Circuits 6Ω 6Ω Typical Example IFGT I IRGT I IRGT III 6V V A 330Ω 6V V A 330Ω Test Procedure I 6Ω Test Procedure II 6V V A 330Ω Gate Current Pulse Width (µs) Test Procedure III REJ03G0338-0300 Page 5 of 6 Rev.3.00 Nov 30, 2007 BCR8CS-12LA Package Dimensions Package Name TO-220S JEITA Package Code SC-83 RENESAS Code PRSS0004AB-A Previous Code TO-220S MASS[Typ.] 1.2g Unit: mm 1.5Max 10.5Max 4.5 1.3 1.5Max 8.6 ± 0.3 9.8 ± 0.5 3.0 –0.5 +0.3 0 +0.3 –0 1 5 0.8 0.5 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Plastic Magazine (Tube) Quantity 1000 50 Standard order code Type name – T +Direction (1 or 2) +1 Type name Standard order code example BCR8CS-12LA-T11 BCR8CS-12LA Note : Please confirm the specification about the shipping in detail. REJ03G0338-0300 Page 6 of 6 Rev.3.00 Nov 30, 2007 2.6 ± 0.4 4.5 (1.5) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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