H5N1506P-E

H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0200 Rev.2.00 Jul 03, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 150 ±30 98 294 98 294 48 172 150 0.833 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.2.00 Jul 03, 2006 page 1 of 6 H5N1506P Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 150 — — 3.0 36 — — — — — — — — — — — — — — Typ — — — — 60 0.014 4900 1000 120 60 380 220 250 100 24 45 1.0 150 1.0 Max — 1 ±0.1 4.5 — 0.016 — — — — — — — — — — 1.5 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 47.5 A, VDS = 10 V Note4 ID = 47.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 47.5 A VGS = 10 V RL = 1.58 Ω Rg = 10 Ω VDD = 120 V VGS = 10 V ID = 95 A IF = 95 A, VGS = 0 Note4 IF = 95 A, VGS = 0 diF/dt = 100 A/µs Rev.2.00 Jul 03, 2006 page 2 of 6 H5N1506P Main Characteristics Power vs. Temperature Derating 200 1000 300 150 10 10 0 µs 1 m µs s Maximum Safe Operation Area Ta = 25°C Channel Dissipation Pch (W) Drain Current ID (A) 100 30 10 3 1 0.3 100 PW = 10 ms (1shot) DC Operation (Tc = 25°C) area is limited by 50 0.1 Operation in this 0.03 RDS(on) 0.01 1 3 0 50 100 150 200 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V Pulse Test 100 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 6V 60 Drain Current ID (A) 80 7V 6.5 V 80 60 40 5.5 V 40 20 VGS = 5 V 20 Tc = 75°C 2 4 0 4 8 12 16 20 0 25°C −25°C 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) 4 Pulse Test 3 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.1 0.05 0.02 0.01 0.005 0.002 0.001 1 3 10 30 Pulse Test VGS = 10 V 2 ID = 95 A 1 47.5 A 20 A 0 4 8 12 16 20 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Jul 03, 2006 page 3 of 6 H5N1506P Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 0.05 VGS = 10 V 1000 300 100 30 25°C 10 3 1 1 75°C VDS = 10 V Pulse Test 3 10 30 100 300 1000 Tc = −25°C Pulse Test Static Drain to Source on State Resistance RDS(on) (Ω) Forward Transfer Admittance vs. Drain Current 0.04 47.5 A 0.03 ID = 95 A 0.02 20 A 0.01 0 −25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 100000 30000 VGS = 0 f = 1 MHz Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1000 500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 0 di / dt = 100 A / µs VGS = 0, Ta = 25°C Capacitance C (pF) 10000 3000 1000 300 100 Crss 30 50 100 150 Coss Ciss Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) ID = 95 A VDD = 120 V 60 V 30 V VDS Switching Characteristics Gate to Source Voltage VGS (V) 16 10000 VGS = 10 V, VDD = 75 V PW = 5 µs, duty ≤ 1 % RG = 10 Ω tf td(off) tr tf 240 180 VGS 12 Switching Time t (ns) 1000 120 8 100 tr 10 0.1 td(on) 60 VDD = 120 V 60 V 30 V 40 80 120 160 4 0 0 200 0.3 1 3 10 30 100 Gate Charge Qg (nC) Drain Current ID (A) Rev.2.00 Jul 03, 2006 page 4 of 6 H5N1506P Reverse Drain Current vs. Source to Drain Voltage 100 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 5 VDS = 10 V 4 ID = 10 mA Reverse Drain Current IDR (A) 80 1 mA 60 10 V 40 5V 20 VGS = 0 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 3 2 0.1 mA 1 0 –25 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C PDM D= PW T 0.03 0.02 0.0 1 h 1s ot pu PW T lse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform Vin Monitor D.U.T. RL 10 Ω Vin 10 V Vout Monitor Vin Vout V DD = 75 V 10% 10% 90% 10% 90% 90% td(off) tf td(on) tr Rev.2.00 Jul 03, 2006 page 5 of 6 H5N1506P Package Dimensions Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 1.5 15.6 ± 0.3 4.8 ± 0.2 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name H5N1506P-E Quantity 360 pcs Box (Tube) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Jul 03, 2006 page 6 of 6 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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