HAF2014

HAF2014 Silicon N Channel MOS FET Series Power Switching REJ03G1140-0300 (Previous: ADE-208-953) Rev.3.00 Apr 27, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 4 G Temperature Sensing Circuit 3 Gate resistor Latch Circuit Gate Shutdown Circuit 1. Gate 2. Drain 3. Source 4. Drain 1 2 S Rev.3.00 Apr 27, 2006 page 1 of 7 HAF2014 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 60 16 –2.5 40 80 40 50 150 –55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd VOP Min 3.5 — — — — — — — 3.5 Typ — — — — — 0.8 0.35 175 — Max — 1.2 100 50 1 — — — 12 Unit V V µA µA µA mA mA °C V Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature Rev.3.00 Apr 27, 2006 page 2 of 7 HAF2014 Electrical Characteristics (Ta = 25°C) Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr Min 15 — 60 16 –2.5 — — — — — — — 1.0 — — 8 — — — — — — — Typ — — — — — — — — — 0.8 0.35 — — 25 15 16 940 10.7 66 15.5 19 1 200 Max — 10 — — — 100 50 1 –100 — — 10 2.25 33 20 — — — — — — — — Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF µs µs µs µs V ns ms Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 300 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 4 V Note 3 ID = 20 A, VGS = 10 V Note 3 ID = 20 A, VDS = 10 V Note 3 VDS = 10 V, VGS = 0 f = 1 MHz ID = 20 A VGS = 5 V RL = 1.5 Ω IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time Note4 tos1 — 1 — Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. Rev.3.00 Apr 27, 2006 page 3 of 7 HAF2014 Main Characteristics Power vs. Temperature Derating 80 500 Maximum Safe Operation Area Thermal shut down 200 Operation area Pch (W) ID (A) 60 100 50 20 10 5 DC Op PW 10 1 0 s µs 10 µs Channel Dissipation Drain Current 40 er = m at 20 Operation in this area is 2 limited by RDS (on) 1 ion 10 m (T s c= 25 °C ) 0 0 50 100 150 200 0.5 Ta = 25°C 0.3 0.3 0.5 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V Typical Transfer Characteristics 50 ID (A) ID (A) 80 8V 6V 5V Pulse Test 40 Tc = –25°C 25°C 75°C 60 Drain Current Drain Current 4V VGS = 3.5 V 30 40 20 20 10 VDS = 10 V Pulse Test 0 0 2 4 6 8 10 0 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 0.5 Pulse Test 0.4 ID = 20 A 0.3 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 50 VGS = 4 V 20 10 5 10 V 0.2 10 A 0.1 5A 2 Pulse Test 1 1 2 5 10 20 50 100 200 0 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.3.00 Apr 27, 2006 page 4 of 7 HAF2014 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 0.10 Pulse Test 100 50 Tc = –25°C 20 10 5 75°C 25°C Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 0.08 0.06 ID = 20 A 0.04 VGS = 4 V 5 A, 10 A 0.02 5 A, 10 A 10 V 0 –40 0 40 80 ID = 20 A 2 1 0.5 120 160 1 2 5 10 20 50 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1000 500 1000 500 Switching Characteristics VGS = 5 V, VDD = 30 V PW = 300 µs, duty ≤ 1 % Switching Time t (ns) 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 1 2 5 10 20 50 200 100 tr 50 tf td(on) 10 0.5 1 2 5 td(off) 10 20 50 20 10 0.5 20 Reverse Drain Current IDR (A) Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage 50 10000 Pulse Test 3000 1000 300 100 30 10 0 0.4 0.8 1.2 1.6 2.0 0 Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current IDR (A) VGS = 5 V 30 0V 20 Capacitance C (pF) 40 Coss 10 VGS = 0 f = 1 MHz 10 20 30 40 50 0 Source to Drain Voltage VSD (V) Drain to Source Voltage VDS (V) Rev.3.00 Apr 27, 2006 page 5 of 7 HAF2014 Gate to Source Voltage vs. Shutdown Time of Load-Short Test VGS (V) 12 10 8 6 16 V 4 2 0 0.1 VDD = 9 V Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) 200 180 Gate to Source Voltage 160 140 120 ID = 5 A 100 0 2 4 6 8 10 1 10 100 Shutdown Time of Load-Short Test PW (S) Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 2 0.03 0.0 .01 0 h 1s θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C PDM p ot ul s e D= PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor D.U.T. RL Vout Monitor Vin Vout 10% 10% 90% 10% Vin 5V 50 Ω VDD = 30 V td(on) 90% tr 90% td(off) tf Rev.3.00 Apr 27, 2006 page 6 of 7 HAF2014 Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Package Name TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 –0.08 +0.2 –0.1 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name HAF2014-90 Quantity Max: 50 pcs/sack Shipping Container Sack Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Apr 27, 2006 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. 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