DATASHEET
82C82
FN2975
Rev 2.00
Aug 25, 2015
CMOS Octal Latching Bus Driver
Features
Description
• Full Eight-Bit Parallel Latching Buffer
The Intersil 82C82 is a high performance CMOS Octal
Latching Buffer manufactured using a self-aligned silicon
gate CMOS process (Scaled SAJI IV). The 82C82 provides
an eight-bit parallel latch/buffer in a 20 pin package. The
active high strobe (STB) input allows transparent transfer of
data and latches data on the negative transition of this
signal. The active low output enable (OE) permits simple
interface to state-of-the-art microprocessor systems.
• Bipolar 8282 Compatible
• Three-State Noninverting Outputs
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . 35ns Max.
• Gated Inputs:
- Reduce Operating Power
- Eliminate the Need for Pull-Up Resistors
• Single 5V Power Supply
• Low Power Operation. . . . . . . . . . . . . . . .ICCSB = 10A
• Operating Temperature Ranges
- C82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC
- I82C82 . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC
- M82C82 . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
Pinouts
DI1
DI0
VCC
DO0
2
1
20
19
DI2
3
18 DO1
DI3 4
DI4 5
DI3
4
17 DO2
DI4
5
16 DO3
DI5 6
DI5
6
15 DO4
DI6 7
DI6
7
14 DO5
DI7
8
13 DO6
OE
9
12 DO7
GND 10
11 STB
DI7 8
NO
LO
N
R
GE
AI
AV
LA
E
BL
OR
SU
O
PP
TRUTH TABLE
ED
RT
18 DO1
17 DO2
16 DO3
15 DO4
14 DO5
STB
OE
DI
DO
X
H
X
Hi-Z
H
L
L
L
H
L
H
H
L
X
†
H
L
X
†
= Logic One
= Logic Zero
= Don’t Care
= Latched to Value of Last
Data
Hi-Z = High Impedance
= Neg. Transition
PIN NAMES
9
10
11
12
13
DO6
19 DO0
DO7
2
STB
DI1
FN2975 Rev 2.00
Aug 25, 2015
3
20 VCC
GND
1
OE
DI0
82C82 (PLCC, CLCC)
TOP VIEW
DI2
82C82 (PDIP, CERDIP)
TOP VIEW
PIN
DESCRIPTION
DI0-DI7
Data Input Pins
DO0-DO7
Data Output Pins
STB
Active High Strobe
OE
Active Low Output
Enable
Page 1 of 8
82C82
Ordering Information
PART NUMBER
CP82C82
(No longer available)
TEMP. RANGE
0oC to +70oC
IP82C82 (No longer available)
-40oC to +85oC
CS82C82 (No longer available)
0oC to +70oC
IS82C82 (No longer available)
-40oC to +85oC
CD82C82 (No longer available)
0oC to +70oC
ID82C82 (No longer available)
-40oC to +85oC
MD82C82/B (No longer available)
-55oC to +125oC
8406701RA
MR82C82/B (No longer available)
PACKAGE
PKG. NO.
20 Ld PDIP
E20.3
20 Ld PLCC
N20.35
20 Ld CERDIP
F20.3
SMD #
-55oC to +125oC
84067012A(No longer available)
20 Pad CLCC
J20.A
SMD #
Functional Diagram
DIO
D Q
CLK
DO0
DI1
DO1
DI2
DO2
DI3
DO3
DI4
DO4
DI5
DO5
DI6
DO6
DI7
DO7
STB
OE
Gated Inputs
During normal system operation of a latch, signals on the bus at
the device inputs will become high impedance or make transitions unrelated to the operation of the latch. These unrelated
input transitions switch the input circuitry and typically cause an
increase in power dissipation in CMOS devices by creating a
low resistance path between VCC and GND when the signal is
at or near the input switching threshold. Additionally, if the driving signal becomes high impedance (“float” condition), it could
create an indeterminate logic state at the input and cause a disruption in device operation.
input transitions and invalid logic states from floating inputs are
not transmitted. The next stage is held to a valid logic level internal to the device.
The Intersil 82C8X Series of bus drivers eliminates these conditions by turning off data inputs when data is latched (STB = logic
zero for the 82C82/83H) and when the device is disabled (OE =
logic one for 82C86H/87H). These gated inputs disconnect the
input circuitry from the VCC and ground power supply pins by
turning off the upper P-channel and lower N-channel (see Figures 1, 2). No new current flow from VCC to GND occurs during
FN2975 Rev 2.00
Aug 25, 2015
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82C82
DC input voltage levels can also cause an increase in ICC if
these input levels approach the minimum VIH or maximum
VIL conditions. This is due to the operation of the input circuitry in its linear operating region (partially conducting
state). The 82C8X series gated inputs mean that this condition will occur only during the time the device is in the trans
parent mode (STB = logic one). ICC remains below the maximum ICC standby specification of l0mA during the time
inputs are disabled, thereby, greatly reducing the average
power dissipation of the 82C8X series devices
Typical 82C82 System Example
In a typical 80C86/88 system, the 82C82 is used to latch
multiplexed addresses and the STB input is driven by ALE
(Address Latch Enable) (see Figure 3). The high pulse width
of ALE is approximately 100ns with a bus cycle time of
800ns (80C86/88 at 5MHz). The 82C82 inputs are active
only 12.5% of the bus cycle time. Average power dissipation
related to input transitioning is reduced by this factor also.
VCC
VCC
VCC
P
P
P
N
STB
OE
P
P
DATA IN
INTERNAL
DATA
DATA IN
INTERNAL
DATA
VCC
N
P
N
N
N
N
FIGURE 1. 82C82/83H
FIGURE 2. 82C86H/87H GATED INPUTS
Application Information
Decoupling Capacitors
The transient current required to charge and discharge the
300pF load capacitance specified in the 82C82 data sheet is
determined by:
I = C L (dv/dt)
(EQ. 1)
Assuming that all outputs change state at the same time and
that dv/dt is constant;
I = CL
(EQ. 2)
V CC x 80%
----------------------------------tR/tF
(EQ. 3)
where tR = 20ns, VCC = 5.0V, CL = 300pF on each of eight
outputs.
I = 8 x 300 x 10
-12
x (5.0V x 0.8)/ 20 x 10
VCC
–9
= 480mA
(EQ. 4)
VCC
P
P
ALE
MULTIPLEXED
BUS
STB
ADDRESS
ADDRESS
N
P
INTERNAL
DATA
DATA IN
N
ICC
N
FIGURE 3. SYSTEM EFFECTS OF GATED INPUTS
FN2975 Rev 2.00
Aug 25, 2015
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82C82
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.5V to VCC +0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance (Typical)
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
C82C82. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0oC to +70oC
I82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC
M82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
JA
JC
CERDIP . . . . . . . . . . . . . . . . . . . . . . . . 75oC/W
18oC/W
CLCC. . . . . . . . . . . . . . . . . . . . . . . . . . 85oC/W
22oC/W
PDIP . . . . . . . . . . . . . . . . . . . . . . . . . .
75
N/A
PLCC . . . . . . . . . . . . . . . . . . . . . . . . . .
75
N/A
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC
Minimum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
(PLCC Lead Tips Only)
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications VCC = 5.0V 10%;
SYMBOL
VIH
PARAMETER
Logical One Input Voltage
VIL
Logical Zero Input Voltage
VOH
Logical One Output Voltage
VOL
Logical Zero Output Voltage
TA = 0oC to +70oC (C82C82);
TA = -40oC to +85oC (I82C82);
TA = -55oC to +125oC (M82C82)
MIN
MAX
UNITS
TEST CONDITIONS
2.0
-
V
C82C82, I82C82 (Note 1)
2.2
-
V
M82C82 (Note 1)
-
0.8
V
2.9
-
V
IOH = -8mA, OE = GND
VCC -0.4V
-
V
IOH = -100A, OE = GND
-
0.4
V
IOL = 8mA, OE = GND
II
Input Leakage Current
-1.0
1.0
A
VIN = GND or VCC, DIP Pins 1-9, 11
IO
Output Leakage Current
-10.0
10.0
A
VO = GND or VCC, OE VCC -0.5V
DIP Pins 12-19
VIN = VCC or GND, VCC = 5.5V, Outputs Open
ICCSB
Standby Power Supply Current
-
10
A
ICCOP
Operating Power Supply
Current
-
1
mA/MHz
TA = +25oC, VCC = 5V, Typical (See Note 2)
NOTES:
1. VIH is measured by applying a pulse of magnitude = VIH min to one data input at a time and checking the corresponding device output
for a valid logical “1” during valid input high time. Control pins (STB, OE) are tested separately with all device data input pins at VCC -0.4.
2. Typical ICCOP = 1mA/MHz of STB cycle time. (Example: 5MHz P, ALE = 1.25MHz, ICCOP = 1.25mA).
Capacitance
SYMBOL
TA = +25oC
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
Freq = 1MHz, all measurements are
referenced to device GND
CIN
Input Capacitance
13
pF
COUT
Output Capacitance
20
pF
FN2975 Rev 2.00
Aug 25, 2015
Page 4 of 8
82C82
TA = 0oC to +70oC (C82C82);
CL = 300pF (Note 1), Freq = 1MHz TA = -40oC to +85oC (I82C82);
TA = -55oC to +125oC (M82C82)
AC Electrical Specifications VCC = 5.0V 10%;
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
(1)
TIVOV
Propagation Delay Input to Output
-
35
ns
Notes 2, 3
(2)
TSHOV
Propagation Delay STB to Output
-
55
ns
Notes 2, 3
(3)
TEHOZ
Output Disable Time
-
35
ns
Notes 2, 3
(4)
TELOV
Output Enable Time
-
50
ns
Notes 2, 3
(5)
TIVSL
Input to STB Setup Time
0
-
ns
Notes 2, 3
(6)
TSLIX
Input to STB Hold Time
25
-
ns
Notes 2, 3
(7)
TSHSL
STB High Time
25
-
ns
Notes 2, 3
(8)
TR, TF
Input Rise/Fall Times
-
20
ns
Notes 2, 3
NOTES:
1. Output load capacitance is rated at 300pF for ceramic and plastic packages.
2. All AC parameters tested as per test circuits and definitions below. Input rise and fall times are driven at 1ns/V.
3. Input test signals must switch between VIL - 0.4V and VIH +0.4V.
Timing Waveforms
TR, TF (8)
2.0V
0.8V
INPUTS
TIVSL (5)
TSLIX
(6)
STB
TSHSL (7)
OE
TIVOV
(1)
TELOV (4)
TEHOZ (3)
VOH -0.1V
OUTPUTS
VOL +0.1V
2.4V
0.8V
TSHOV (2)
Test Load Circuits
1.7V
150
OUTPUT
0.6V
TEST
POINT
300pF
(NOTE)
TIVOV, TSHOV, TELOV
3.3V
300
OUTPUT
TEST
POINT
50pF
(NOTE)
TEHOZ OUTPUT HIGH DISABLE
300
OUTPUT
TEST
POINT
50pF
(NOTE)
TEHOZ OUTPUT LOW DISABLE
NOTE: Includes stray and jig capacitance.
FN2975 Rev 2.00
Aug 25, 2015
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82C82
Burn-In Circuits
MD82C82 CERDIP
VCC
F2
F2
F2
F2
F2
F2
F2
F2
F0
R1
1
R1
C1
20
2
19
A
3
18
A
4
17
A
5
16
A
6
15
A
7
14
A
8
13
A
9
12
10
11
R1
R1
R1
R1
R1
R1
R1
VCC
R2
A
A
R1
R2
F1
MR82C82 CLCC
C1
VCC
F2
F2
R3
3
F2
F2
F2
F2
F2
R3
R3
R3
R3
R3
VCC/2
F2
R3
2
R3
R3
1
20
19
18
4
5
17
16
6
15
7
14
8
9
10
R3
F0
11
12
R3
R3
R3
R3
R3
R3
VCC/2
VCC/2
VCC/2
VCC/2
VCC/2
13
R3
R3
F1 VCC/2 VCC/2
NOTES:
1. VCC = 5.5 0.5V, GND = 0V.
2. VIH = 4.5V 10%.
3. VIL = -0.2V to 0.4V.
4. R1 = 47k 5%.
5. R2 = 2.0k 5%.
6. R3 = 4.2k 5%.
7. R4 = 470k 5%.
8. C1 = 0.01F minimum.
9. F0 = 100kHz 10%.
10. F1 = F0/2, F2 = F1/2.
FN2975 Rev 2.00
Aug 25, 2015
Page 6 of 8
82C82
Die Characteristics
DIE DIMENSIONS:
118.1 x 92.1 x 19 1mils
GLASSIVATION:
Type: SiO2
Thickness: 8kÅ 1kÅ
METALLIZATION:
Type: Si - Al
Thickness: 11kÅ 1kÅ
WORST CASE CURRENT DENSITY:
2.00 x 105 A/cm2
Metallization Mask Layout
82C82
D12
FN2975 Rev 2.00
Aug 25, 2015
D11
D10
VCC
DO0
D01
2
1
20
19
18
3
D13
4
D14
5
D15
6
D16
7
8
9
10
11
12
D17
OE
GND
STB
DO7
17
DO2
16
DO3
15
DO4
14
DO5
13
DO6
Page 7 of 8
82C82
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make
sure that you have the latest revision.
DATE
REVISION
August 25, 2015
FN2975.2
CHANGE
- Ordering Information Table on page 2.
- Added Revision History.
- Added About Intersil Verbiage.
About Intersil
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FN2975 Rev 2.00
Aug 25, 2015
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