RJK4007DPP-M0

Preliminary Datasheet RJK4007DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.47  typ. (at ID = 7 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0229EJ0100 Rev.1.00 Dec 15, 2010 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1. Gate 2. Drain 3. Source 1 23 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Single pulse 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch ch-c Tch Tstg Note2 Ratings 400 30 7.6 30 7.6 30 14 26.1 32 3.9 150 –55 to +150 Unit V V A A A A A mJ W C/W C C R07DS0229EJ0100 Rev.1.00 Dec 15, 2010 Page 1 of 6 RJK4007DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 400 — — 3.0 — — — — — — — — — — — — — Typ — — — 3.5 0.47 850 140 20 25 30 90 35 24.5 5 10 0.9 230 Max — 10 0.1 4.0 0.55 — — — — — — — — — — 1.5 — Unit V A A V  pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 1 mA, VGS = 0 VDS = 400 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 7 A VGS = 10 V RL = 28.6  Rg = 25  VDD = 320 V VGS = 10 V ID = 14 A IF = 14 A, VGS = 0 Note4 IF = 14 A, VGS = 0 diF/dt = 100 A/s R07DS0229EJ0100 Rev.1.00 Dec 15, 2010 Page 2 of 6 RJK4007DPP-M0 Preliminary Main Characteristics Maximum Safe Operation Area 100 10 Typical Output Characteristics 6V 5.4 V 10 Drain Current ID (A) 00 μs Drain Current ID (A) 10 PW μs 7V Pulse Test Ta = 25°C 5.2 V =1 8 10 V 6 1 0.1 Operation in this area is limited by RDS(on) 5V 4.9 V 4.8 V 4 0.01 Tc = 25°C 1 shot 10 100 1000 2 4.7 V VGS = 4.5 V 0.001 1 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 10 Pulse Test VGS = 10 V Ta = 25°C Typical Transfer Characteristics 20 VDS = 10 V Pulse Test −25°C 25°C Drain Current ID (A) 16 12 8 Tc = 75°C 1 4 0 2 4 6 8 10 0.1 0.1 1 10 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical) Pulse Test VGS = 10 V 1.6 ID = 14 A Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) (Ω) Body-Drain Diode Reverse Recovery Time (Typical) 1000 1.2 Reverse Recovery Time trr (ns) 2.0 100 0.8 3A 7A 0.4 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Drain Current IDR (A) R07DS0229EJ0100 Rev.1.00 Dec 15, 2010 Page 3 of 6 RJK4007DPP-M0 Typical Capacitance vs. Drain to Source Voltage (Typical) Drain to Source Voltage VDS (V) 10000 Preliminary Dynamic Input Characteristics (Typical) ID = 14 A Ta = 25 °C VGS 12 VDS VDD = 320 V 200 V 100 V 8 1000 Ciss 300 100 Coss 10 VGS = 0 f = 1 MHz Ta = 25°C 100 200 300 Crss 200 100 VDD = 320 V 200 V 100 V 8 16 24 32 4 1 0 0 40 0 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) 20 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 VDS = 10 V Reverse Drain Current IDR (A) 16 VGS = 0 Pulse Test Ta = 25 °C 4 12 3 ID = 10 mA 1 mA 2 1 0.1 mA 8 4 0 0.4 0.8 1.2 1.6 2.0 0 -25 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) R07DS0229EJ0100 Rev.1.00 Dec 15, 2010 Page 4 of 6 Gate to Source Voltage VGS (V) 400 16 Capacitance C (pF) RJK4007DPP-M0 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C Preliminary 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 θch – c (t) = γ s (t) • θch – c θch – c = 3.9°C/W, Tc = 25°C 0.01 o 1sh tp uls e PDM PW T D= PW T 0.001 10 μ 100 μ 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 25 Ω Vin 10 V VDD =200 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(on) tr 90% td(off) tf R07DS0229EJ0100 Rev.1.00 Dec 15, 2010 Page 5 of 6 RJK4007DPP-M0 Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 3.0 ± 0.3 15.0 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 6.5 ± 0.3 2.6 ± 0.2 4.5 ± 0.2 Ordering Information Orderable Part Number RJK4007DPP-M0-T2 Quantity 1050 pcs Shipping Container Box (Tube) R07DS0229EJ0100 Rev.1.00 Dec 15, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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