2SB1132_1

2SB1132 / 2SA1515S / 2SB1237 Transistors Medium Power Transistor (−32V,−1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low VCE(sat). VCE(sat) = −0.2V(Typ.) (IC / IB = −500mA / −50mA) 2) Compliments 2SD1664 / 2SD1858 External dimensions (Unit : mm) 2SB1132 0.5 + 0.1 − 4.5 +0.2 −0.1 1.6 + 0.1 − 1.5 +0.2 −0.1 2SA1515S 4 + 0.2 − 2 + 0.2 − 3 + 0.2 − 4.0 + 0.3 − 2.5 +0.2 −0.1 (15Min.) (1) (2) (3) 0.4 0.1 1.5 + 0.1 − 1.0 + 0.2 − 0.4 +0.1 −0.05 0.45 +0.15 −0.05 Structure Epitaxial planar type PNP silicon transistor 0.4 + 0.1 − 1.5 + 0.1 − 0.5 + 0.1 − 3.0 + 0.2 − 3Min. 5 2.5 +0.4 −0.1 0.5 0.45 +0.15 −0.05 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter (1) (2) (3) ROHM : SPT EIAJ : SC-72 Abbreviated symbol: BA ∗ 2.5 + 0.2 − (1) Emitter (2) Collector (3) Base 2SB1237 6.8 + 0.2 − 0.65Max. 1.0 0.5 + 0.1 − (1) (2) (3) 2.54 2.54 1.05 14.5 + 0.5 − 4.4 + 0.2 − 0.9 0.45 + 0.1 − ROHM : ATV (1) Emitter (2) Collector (3) Base ∗ Denotes h FE Rev.B 1/4 2SB1132 / 2SA1515S / 2SB1237 Transistors Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −40 −32 −5 −1 −2 0.5 2 PC 0.3 1 Tj Tstg + + Unit V V V A(DC) A(Pulse) ∗1 ∗2 ∗3 2SB1132 Collector power dissipation 2SA1515S 2SB1237 Junction temperature Storage temperature W 150 −55 to +150 C C ∗ ∗ ∗ 1 Single pulse, Pw=100ms 2 When mounted on a 40 40 0.7 mm ceramic board. 3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1132, 2SB1237 2SA1515S Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −40 −32 −5 − − − 82 120 − − Typ. − − − − − −0.2 − − 150 20 Max. − − − −0.5 −0.5 −0.5 390 390 − 30 Unit V V V µA µA V − − MHz pF IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −4V IC/IB= −500mA/−50mA VCE= −3V, IC= −0.1A VCE= −5V, IE=50mA, f=30MHz VCB= −10V, IE=0A, f=1MHz Conditions ∗ ∗ Transition frequency Output capacitance ∗ Measured using pulse current. Packaging specifications and hFE Package Code Type 2SB1132 2SA1515S 2SB1237 hFE PQR QR PQR − − − Basic ordering unit (pieces) T100 1000 Taping TP 5000 − TU2 2500 − − hFE values are classified as follows : Item hFE P 82 to 180 Q 120 to 270 R 180 to 390 Rev.B 2/4 2SB1132 / 2SA1515S / 2SB1237 Transistors Electrical characteristics curves -500 COLLECTOR CURRENT : IC (mA) -200 -100 -50 -20 -10 -5 -2 -1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) Ta=100 C 25 C −55 C COLLECTOR CURRENT : IC (mA) VCE= −6V −500 −300 −1.5 DC CURRENT GAIN : hFE −3.0 −3.5 −4.0 −400 −4.5 −5.0 −2.5 Ta=25 C −2.0 1000 Ta=25 C 500 VCE= −3V −1V 200 −200 −1.0 −100 −0.5 100 0 0 −0.4 −0.8 −1.2 IB=0mA −1.6 −2.0 50 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current(Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat )(V) VCE= −3V 1000 DC CURRENT GAIN : hFE −0.5 Ta=25 C IC/IB=10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 −1.0 Ta=25 C −0.8 500 Ta=100 C 200 25 C −55 C −0.2 −0.1 −0.05 −0.6 lC= −500mA −0.4 100 50 −1 −2 −0.02 −0.01 −1 −2 −0.2 lC= −300mA −2 −5 −10 −20 −50 −100 −5 −10 −20 −50 −100 −200 −500 −1000 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 0 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) BASE CURRENT : IB (mA) Fig.4 DC current gain vs. collector current(ΙΙ) Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. base current TRANSITION FREQUENCY : fT (MHz) Ta=25 C VCE= −5V 200 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 COLLECTOR CURRENT : IC (A) Ta=25 C f=1MHz IE=0A −5 −2 s 0m =1 ∗ P w ms 00 =1 Pw 50 −1 −0.5 −0.2 −0.1 −0.05 −0.02 Ta=25 C ∗Single pulse −0.01 0 −0.2 −0.5 −1 D C ∗ 100 50 20 20 −1 −2 −5 −10 −20 −50 −100 10 −0.5 −1 −2 −5 −10 −20 −2 −5 −10 −20 −50 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs.collector-base voltage Fig.9 Safe operation area (2SB1132) Rev.B 3/4 2SB1132 / 2SA1515S / 2SB1237 Transistors TRANSIENT THERMAL RESISTANCE : Rth ( C/W) 1000 Ta=25 C −5 COLLECTOR CURRENT : IC (A) −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −0.1 −0.2 IC Max. ∗ Ta=25 C ∗Single pulse 200 100 Ta=25 C 100 TRANSIENT THERMAL RESISTANCE : Rth ( C/W) −2 −5 −10 −20 −50 50 PW =10ms∗ PW =100ms∗ DC 10 20 10 5 1 0.1 0.001 0.01 0.1 1 TIME : t (s) 10 100 1000 −0.5 −1 2 0.01 0.1 1 10 100 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) TIME : t (s) Fig.10 Transient thermal resistance (2SB1132) Fig.11 Safe operation area (2SB1237) Fig.12 Transient thermal resistance (2SB1237) Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1