R4008AND

Data Sheet 10V Drive Nch MOSFET R4008AND  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0  Application Switching  Packaging specifications Type R4008AND Package Code Basic ordering unit (pieces) Taping TL 2500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Pulsed VDSS VGSS ID IDP IS ISP IAS EAS PD Tch Tstg *3 *3 *5 *4 *4 (1) Gate (2) Drain (3) Source (1) (2) (3) Limits 400 30 8 32 48 8 32 48 4 4.3 20 150 55 to 150 *1 *2 Unit V V A A A 1 BODY DIODE Source current (Body Diode) Avalanche current Avalanche energy Power dissipation *1 *2 A A mJ W C C Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Pw≤1s, Duty cycle≤1% Limited by Safe Operating Area.(VDS≤30V) *3 L 500H, VDD=50V, RG=25 , T ch=25C *4 Limited only by maximum temperature allowed. *5 TC=25C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 6.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A 2.5 0.75 0.9 1.5 9.5 R4008AND  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 400 2.5 2 Typ. 0.73 500 280 25 20 20 48 16 15 3.5 7 Max. 100 100 4.5 0.95 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=400V, VGS=0V VDS=10V, ID=1mA ID=4A, VGS=10V VDS=10V, ID=4A VDS=25V VGS=0V f=1MHz VDD 200V, ID=4A VGS=10V RL=50 RG=10 VDD 200V ID=8A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Conditions Unit V IS=8A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R4008AND Electrical characteristic curves 　 Data Sheet Fig.1 Maximum Safe Operating Aera 100 Operation in this area is limited by RDS(ON) 1 0.9 0.8 10 Drain Current : ID [A] PW =100us 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 1000 Fig.2 Typical Output Characteristics ( Ⅰ) 8 VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V VGS=6.0V 7 VGS=5.0V Drain Current : ID [A] 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Drain-Source Voltage : VDS [V] 0 Fig.3 Typical Output Characteristics ( Ⅱ) VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V DRAIN CURRENT : ID (A) VGS=6.0V Ta=25℃ pulsed 1 PW =1ms 0.1 Ta=25℃ pulsed PW =10ms VGS=4.5V Ta=25℃ pulsed VGS=5.0V VGS=4.5V 1 2 3 4 5 6 7 8 9 10 0.01 DRAIN-SOURCE VOLTAGE : VDS ( V ) Drain-Source Voltage : VDS [V] Fig.4 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE: VGS(th) (V) 100 VDS= 10V Pulsed DRAIN CURRENT : ID (A) 10 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 6 5 4 3 2 1 0 -50 Fig.5 Gate Threshold Voltage vs. Channel Temperature 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS= 10V ID= 1mA Fig.6 Static Drain-Source On-State Resistance vs. Drain Current VGS= 10V Pulsed 1 1 0.1 0.01 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.1 1 10 100 0.001 0 1 2 3 4 5 6 7 8 9 GATE-SOURCE VOLTAGE : VGS (V) 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage 3.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2.5 2.0 1.5 ID= 8.0A 1.0 0.5 0.0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) ID= 4.0A Ta=25℃ pulsed 3 2.5 2 1.5 1 Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 100 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) VGS= 10V Pulsed Fig.9 Forward Transfer Admittance vs. Drain Current VDS= 10V Pulsed 10 ID= 8.0A 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ ID= 4.0A 0.5 0 -50 0.1 0 50 100 150 0.01 0.01 0.1 1 10 100 CHANNEL TEMPERATURE: Tch (℃) DRAIN CURRENT : ID (A) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R4008AND 　 Data Sheet Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 100 VGS= 0V Pulsed CAPACITANCE : C (pF) 10 1000 10000 Fig.11 Typical Capacitance vs. Drain-Source Voltage 15 GATE-SOURCE VOLTAGE : VGS (V) Fig.12 Dynamic Input Characteristics SOURCE CURRENT : IS (A) Ciss 10 Ta= 25°C VDD= 200V ID= 8A RG= 10Ω Pulsed 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 100 Coss 10 5 0.1 Ta= 25℃ f= 1MHz VGS= 0V 0.1 1 10 Crss 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 1 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) 0 0 5 10 15 20 TOTAL GATE CHARGE : Qg (nC) Fig.13 Reverse Recovery Time vs.Source Current 1000 REVERSE RECOVERY TIME: trr (ns) Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 10000 Fig.14 Switching Characteristics 1000 Switching Time : t [ns] tf td(off) tr 10 td(on) VDD≃200V VGS=10V RG=10W Ta=25℃ Pulsed 100 100 10 0.1 1 10 SOURCE CURRENT : IS (A) 100 1 0.01 0.1 1 10 Drain Current : ID [A] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r(t) Ta = 25℃ Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 79.2℃/W 0.1 1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R4008AND  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A