RB721Q-40_1

RB721Q-40 Diodes Schottky barrier diode RB721Q-40 Applications Low current rectification External dimensions (Unit : mm) CATHODE BAND (BLACK ) TYPE NO. (BLACK ) Features 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability φ 0 .4 ± 0 .1 S 2 - 29± 1 2.7± 0.3 29± 1 φ1 .8 ± 0 .2 ROHM : MS D JEDEC : DO- 3 4 Construction Silicon epitaxial planar Taping specification s (Unit : mm) Sym bo l Stan dard dim e n sio n valu e ( m m ) T - 72 Ａ B T- 7 7 2 6 .0 52.4± 1.5 +0 .4 0 H2 BLUE A BROWN E B C L1 F H1 L2 D T - 72 5.0 ± 0 .5 T - 77 5.0 ± 0 .3 T- 7 2 C 1.0 m ax . T- 7 7 T- 7 2 D 0 T- 7 7 T - 72 1/2 A± 1 .2 E T - 77 1/2 A± 0 .4 T - 72 0.7 m ax . Ｆ T - 77 0.2 m ax . T- 7 2 H1 6 .0± 0.5 T- 7 7 T- 7 2 H2 5 .0± 0.5 T- 7 7 T - 72 1.5 m ax . |L 1 - L2 | T - 77 0.4 m ax . ＊ H 1( 6 m m ) ：B RO W N Absolute maximum ratings (Ta = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Electrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Ct Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 200 125 -40 to +125 Unit V V mA mA ℃ ℃ Min. - Typ. 2.0 Max. 0.37 0.5 - Unit V µA pF Conditions IF=1mA VR=25V VR=1V , f=1MHz Rev.B 1/3 RB721Q-40 Diodes Electrical characteristic curves 100 Ta=125℃ 100000 Ta=125℃ Ta=75℃ 10 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 10 Ta=75℃ Ta=-25℃ 1000 100 10 Ta=-25℃ 1 0.1 Ta=25℃ 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 f=1MHz 1 0.1 Ta=25℃ 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 30 40 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 330 300 10 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 320 310 300 290 280 VF DISPERSION MAP AVE:310.7mV Ta=25℃ IF=1mA n=30pcs 250 200 150 100 50 0 IR DISPERSION MAP AVE:54.0nA Ta=25℃ VR=25V n=30pcs 9 8 7 6 5 4 3 2 1 0 Ct DISPERSION MAP AVE:2.07pF Ta=25℃ f=1MHz VR=1V n=10pcs 20 10 10 Ifsm 8.3ms 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ifsm 1cyc 8.3ms 8 6 4 2 0 Ifsm t 10 5 5 AVE:5.60A 0 IFSM DISRESION MAP Mounted on epoxy board 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 00 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 IM=1mA IF=10mA 0.05 Rth(j-a) 1ms time 300us 0.005 D=1/2 0.004 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 0.04 Rth(j-l) 0.03 0.02 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 100 Rth(j-c) Sin(θ＝180) 0.003 0.002 DC 0.001 0 D=1/2 Sin(θ＝180) DC 0.01 10 0.001 0.1 10 1000 0 0 0.01 0.02 0.03 0. 04 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.05 0 10 20 30 40 TIME:t(s) Rth-t CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB721Q-40 Diodes 0.1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 0.06 0.04 0.02 Sin(θ＝180) 0 0 DC t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io VR D=t/T VR=20V Tj=125℃ 0.1 0.08 0.06 0.04 0.02 DC 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ D=1/2 D=1/2 Sin(θ＝180) 0 125 0 25 50 75 1 00 125 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1