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RFU5TF6S_11

RFU5TF6S_11

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    RFU5TF6S_11 - Super Fast Recovery Diode - Rohm

  • 数据手册
  • 价格&库存
RFU5TF6S_11 数据手册
Data Sheet Super Fast Recovery Diode RFU5TF6S  Series Ultra Fast Recovery  Dimensions (Unit : mm) +0.3 −0.1 +0.3 −0.1 +0.2 −0.1  Structure  Applications General rectification +0.4 −0.2 (1) (3)  Features 1)Single type.(TO-220) 2)Ultra high switching speed  Construction Silicon epitaxial planer +0.1 −0.05  Absolute maximum ratings (Tc=25  C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=93  C Limits 600 600 5.0 60 150 55 to 150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C  Electrical characteristics (Tj=25  C) Parameter Symbol Forward voltage Reverse current Reverse recovery time (*) Thermal resistance(*) VF IR trr Rth(j-c) Conditions IF=5.0A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 2.2 0.02 15 - Max. 2.8 10 25 4 Unit V μA ns  C/W (*) : Design assurance without measurement. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A RFU5TF6S Electrical characteristic curves 100   Data Sheet 100000 Tj=150 C Tj=125 C 1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I F(A) 10 Tj=150 C REVERSE CURRENT : IR(nA) Tj=125 C 10000 f=1MHz Tj=25 C 1000 Tj=75 C Tj=25 C 1 Tj=75 C 100 100 Tj=25 C 10 0.1 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 200 250 300 350 10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 2500 100 Tj=25 C IF=5A n=20pcs Tj=25 C VR=600V n=20pcs 150 CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD VOLTAGE : V F(mV) 2400 REVERSE CURRENT : IR(nA) 140 Ta=25 C f=1MHz VR=0V n=10pcs 2300 AVE : 2132mV 2200 130 AVE : 133.8pF 120 10 AVE : 28.0nA 2100 110 2000 VF DISPERSION MAP 1 IR DISPERSION MAP 100 Ct DISPERSION MAP 200 IFSM 150 8.3ms 1cyc 30 1000 Tj=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs REVERSE RECOVERY TIME : trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT : I FSM(A) PEAK SURGE FORWARD CURRENT : I FSM(A) 25 20 15 10 5 0 trr DISPERSION MAP AVE : 14.3ns 100 100 AVE : 93.0A 50 10 IFSM 8.3ms 8.3ms 1cyc. 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 1000 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 AVE : 1.14kV C=200pF R=0 C=100pF R=1.5k AVE : 2.73kV 10 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) ELECTROSTATIC DISCHARGE TEST ESD(KV) IFSM Rth(j-c) time 100 1 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 ESD DISPERSION MAP 1 10 100 TIME : t(s) Rth-t CHARACTERISTICS 0.1 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RFU5TF6S   Data Sheet 25 D.C. 20 D=0.8 D=0.5 half sin wave 15 D=0.2 10 D=0.1 D=0.05 9 8 D.C. D=0.8 D=0.5 half sin wave D=0.2 D=0.1 0A 0V t T Io VR D=t/T VR=480V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 7 6 5 4 3 2 1 FORWARD POWER DISSIPATION : Pf(W) 5 D=0.05 0 0 3 6 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 9 0 0 30 60 90 120 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
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