Data Sheet
Super Fast Recovery Diode
RFU5TF6S
Series Ultra Fast Recovery Dimensions (Unit : mm)
+0.3 −0.1 +0.3 −0.1 +0.2 −0.1
Structure
Applications General rectification
+0.4 −0.2
(1)
(3)
Features 1)Single type.(TO-220) 2)Ultra high switching speed
Construction Silicon epitaxial planer
+0.1 −0.05
Absolute maximum ratings (Tc=25 C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg
Conditions Duty0.5 Direct voltage
60Hz half sin wave, Resistance load, Tc=93 C
Limits 600 600 5.0 60 150 55 to 150
Unit V V A A C C
60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C
Electrical characteristics (Tj=25 C) Parameter Symbol Forward voltage Reverse current Reverse recovery time (*) Thermal resistance(*) VF IR trr Rth(j-c)
Conditions IF=5.0A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to case
Min. -
Typ. 2.2 0.02 15 -
Max. 2.8 10 25 4
Unit V μA ns C/W
(*) : Design assurance without measurement.
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1/3
2011.06 - Rev.A
RFU5TF6S
Electrical characteristic curves
100
Data Sheet
100000 Tj=150 C Tj=125 C
1000
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
FORWARD CURRENT : I F(A)
10
Tj=150 C
REVERSE CURRENT : IR(nA)
Tj=125 C
10000
f=1MHz Tj=25 C
1000
Tj=75 C
Tj=25 C 1 Tj=75 C
100
100 Tj=25 C 10
0.1 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
1 0 50 100 150 200 250 300 350
10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
2500
100 Tj=25 C IF=5A n=20pcs Tj=25 C VR=600V n=20pcs
150
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
FORWARD VOLTAGE : V F(mV)
2400
REVERSE CURRENT : IR(nA)
140
Ta=25 C f=1MHz VR=0V n=10pcs
2300 AVE : 2132mV 2200
130 AVE : 133.8pF 120
10
AVE : 28.0nA
2100
110
2000 VF DISPERSION MAP
1 IR DISPERSION MAP
100
Ct DISPERSION MAP
200 IFSM 150 8.3ms 1cyc
30
1000 Tj=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs
REVERSE RECOVERY TIME : trr(ns)
ITS ABILITY OF PEAK SURGE FORWARD CURRENT : I FSM(A)
PEAK SURGE FORWARD CURRENT : I FSM(A)
25 20 15 10 5 0 trr DISPERSION MAP AVE : 14.3ns
100
100
AVE : 93.0A 50
10
IFSM 8.3ms 8.3ms
1cyc. 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 IFSM DISRESION MAP
1000
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 AVE : 1.14kV C=200pF R=0 C=100pF R=1.5k AVE : 2.73kV
10
TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W)
PEAK SURGE FORWARD CURRENT : I FSM(A)
ELECTROSTATIC DISCHARGE TEST ESD(KV)
IFSM
Rth(j-c)
time
100
1
10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0.01
ESD DISPERSION MAP
1 10 100 TIME : t(s) Rth-t CHARACTERISTICS
0.1
1000
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
RFU5TF6S
Data Sheet
25 D.C. 20 D=0.8 D=0.5 half sin wave 15 D=0.2 10 D=0.1 D=0.05
9 8 D.C. D=0.8 D=0.5 half sin wave D=0.2
D=0.1
0A 0V t T
Io VR
D=t/T VR=480V Tj=150 C
AVERAGE RECTIFIED FORWARD CURRENT : Io(A)
7 6 5 4 3 2 1
FORWARD POWER DISSIPATION : Pf(W)
5
D=0.05
0 0 3 6 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 9
0 0 30 60 90 120 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 150
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
Notice
Notes
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R1120A
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