RGTH60TK65DGC11

RGTH60TK65D Data Sheet 650V 30A Field Stop Trench IGBT lOutline VCES 650V IC(100°C) 17A VCE(sat) (Typ.) 1.6V@IC=30A PD 61W lFeatures TO-3PFM (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching *1 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications lApplications Packaging PFC Reel Size (mm) - Tape Width (mm) - UPS Tube Type Power Conditioner Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGTH60TK65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 28 A TC = 100°C IC 17 A ICP*1 120 A TC = 25°C IF 28 A TC = 100°C IF 16 A IFP*1 120 A TC = 25°C PD 61 W TC = 100°C PD 30 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 2.43 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 3.76 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 21.0mA 4.5 5.5 6.5 V Tj = 25°C - 1.6 2.1 V Tj = 175°C - 2.1 - Gate - Emitter Threshold Voltage IC = 30A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1670 - Output Capacitance Coes VGE = 0V - 66 - Reverse Transfer Capacitance Cres f = 1MHz - 27 - Total Gate Charge Qg VCE = 300V - 58 - Gate - Emitter Charge Qge IC = 30A - 15 - Gate - Collector Charge Qgc VGE = 15V - 20 - Turn - on Delay Time td(on) IC = 30A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 40 - Tj = 25°C - 105 - Inductive Load - 47 - td(on) IC = 30A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 40 - Tj = 175°C - 120 - Inductive Load - 59 - Rise Time pF nC ns Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time td(off) tf ns Turn - off Delay Time Fall Time td(off) tf IC = 120A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 60Ω, Tj = 175°C www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Tj = 25°C - 1.35 1.8 Tj = 175°C - 1.15 - - 58 - ns - 6.5 - A - 0.21 - μC - 236 - ns - 10.7 - A - 1.36 - μC IF = 20A Diode Forward Voltage Diode Reverse Recovery Time VF trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. V IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 80 35 70 30 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 60 50 40 30 20 10 20 15 10 　5 Tj≦175ºC VGE≧15V 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 Case Temperature : TC [ºC] Case Temperature : TC [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 160 1000 140 10µs 100 Collector Current : IC [A] Collector Current : IC [A] 25 10 100µs 1 0.1 TC= 25ºC Single Pulse 120 100 80 60 40 Tj≦175ºC VGE=15V 20 0.01 0 1 10 100 1000 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 120 120 Tj= 25ºC 100 VGE= 12V VGE= 20V Collector Current : IC [A] Collector Current : IC [A] 100 Tj= 175ºC VGE= 15V 80 VGE= 10V 60 40 VGE= 8V 20 VGE= 20V 80 VGE= 15V VGE= 12V 60 VGE= 10V 40 20 0 VGE= 8V 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE[V] 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 60 4 Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE= 10V 50 Collector Current : IC [A] 1 40 30 20 Tj= 175ºC 10 Tj= 25ºC 0 0 2 4 6 8 10 IC= 60A 3 IC= 30A 2 IC= 15A 1 0 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VGE= 15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25ºC 15 IC= 60A IC= 30A 10 IC= 15A 5 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj= 175ºC 15 IC= 60A IC= 30A 10 IC= 15A 5 0 20 5 Gate To Emitter Voltage : VGE [V] 10 15 Gate To Emitter Voltage : VGE [V] Fig.12 Typical Switching Time vs. Gate Resistance Fig.11 Typical Switching Time vs. Collector Current 1000 1000 VCC=400V, IC=30A VGE=15V, Tj=175ºC Inductive ｌoad Switching Time [ns] VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Switching Time [ns] 20 td(off) tf 100 td(off) 100 tf tr td(on) td(on) tr 10 10 0 10 20 30 40 50 60 0 Collector Current : IC [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 1 Eoff Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Eoff 1 Eon 0.1 VCC=400V, IC=30A VGE=15V, Tj=175ºC Inductive ｌoad 0.01 0.01 0 10 20 30 40 50 0 60 10 Collector Current : IC [A] 30 40 50 Gate Resistance : RG [Ω] Fig.16 Typical Gate Charge Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 15 Cies Capacitance [pF] 20 10 5 VCC=300V IC=30A Tj=25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 Gate Charge : Qg [nC] 8/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] 120 Forward Current : IF [A] 100 80 60 40 Tj= 175ºC 20 Tj= 25ºC VCC=400V diF/dt=200A/µs Inductive ｌoad 300 Tj= 175ºC 200 100 Tj= 25ºC 0 0 0 0.5 1 1.5 2 2.5 0 3 Forward Voltage : VF[V] 20 30 40 50 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge vs. Forward Current 20 2.5 Reverse Recovery Charge : Qrr [µC] Reverse Recovery Current : Irr [A] 10 15 Tj= 175ºC 10 5 VCC=400V diF/dt=200A/µs Inductive ｌoad Tj= 25ºC 0 VCC=400V diF/dt=200A/µs Inductive ｌoad 2 1.5 Tj= 175ºC 1 0.5 Tj= 25ºC 0 0 10 20 30 40 50 0 Forward Current : IF [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Forward Current : IF [A] 9/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 0.1 0.2 1 0.1 0.01 PDM Single Pulse t1 0.02 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.05 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width : t1[s] Fig.22 Diode Transient Thermal Impedance 10 Transient Thermal Impedance : ZthJC [ºC/W] D= 0.5 0.1 0.2 1 PDM 0.01 Single Pulse 0.1 0.02 t1 0.05 0.01 0.0001 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.001 0.01 0.1 1 10 100 Pulse Width : t1[s] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10/11 2016.01 - Rev.A Data Sheet RGTH60TK65D lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE D.U.T. 10% VG 90% IC Fig.23 Inductive Load Circuit 10% td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt 10% Irr Eon Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 11/11 Eoff VCE(sat) Fig.24 Inductive Load Waveform 2016.01 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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