RGTH80TS65GC13
Datasheet
650V 40A Field Stop Trench IGBT
lOutline
VCES
650V
IC(100°C)
40A
VCE(sat) (Typ.)
1.6V
PD
234W
TO-247GE
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
(2)
(1) Gate
(2) Collector
(3) Emitter
2) High Speed Switching
3) Low Switching Loss & Soft Switching
(1)
4) Pb - free Lead Plating ; RoHS Compliant
(3)
lApplications
lPackaging Specifications
PFC
Packaging
UPS
Reel Size (mm)
-
Tape Width (mm)
-
Power Conditioner
Type
IH
Tube
Basic Ordering Unit (pcs)
600
Packing code
C13
Marking
RGTH80TS65
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
650
V
Gate - Emitter Voltage
VGES
30
V
TC = 25°C
IC
70
A
TC = 100°C
IC
40
A
ICP*1
160
A
TC = 25°C
PD
234
W
TC = 100°C
PD
117
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Collector Current
Pulsed Collector Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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1/9
2020.09 - Rev.D
Datasheet
RGTH80TS65GC13
lThermal Resistance
Parameter
Symbol
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Values
Min.
Typ.
Max.
-
-
0.64
Unit
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
BVCES
Conditions
IC = 10μA, VGE = 0V
Values
Unit
Min.
Typ.
Max.
650
-
-
V
Collector Cut - off Current
ICES
VCE = 650V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
-
200
nA
VGE(th)
VCE = 5V, IC = 27.6mA
4.5
5.5
6.5
V
Tj = 25°C
-
1.6
2.1
V
Tj = 175°C
-
2.1
-
Gate - Emitter Threshold
Voltage
IC = 40A, VGE = 15V
Collector - Emitter Saturation
Voltage
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VCE(sat)
2/9
2020.09 - Rev.D
Datasheet
RGTH80TS65GC13
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V
-
2210
-
Output Capacitance
Coes
VGE = 0V
-
85
-
Reverse Transfer Capacitance
Cres
f = 1MHz
-
35
-
Total Gate Charge
Qg
VCE = 300V
-
79
-
Gate - Emitter Charge
Qge
IC = 40A
-
21
-
Gate - Collector Charge
Qgc
VGE = 15V
-
29
-
Turn - on Delay Time
td(on)
IC = 40A, VCC = 400V
-
34
-
tr
VGE = 15V, RG = 10Ω
-
50
-
Tj = 25°C
-
120
-
Inductive Load
-
47
-
td(on)
IC = 40A, VCC = 400V
-
34
-
tr
VGE = 15V, RG = 10Ω
-
50
-
Tj = 175°C
-
135
-
Inductive Load
-
59
-
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
td(off)
tf
td(off)
tf
Unit
pF
nC
ns
ns
IC = 160A, VCC = 520V
Reverse Bias Safe Operating Area
RBSOA VP = 650V, VGE = 15V
FULL SQUARE
-
RG = 60Ω, Tj = 175°C
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3/9
2020.09 - Rev.D
Datasheet
RGTH80TS65GC13
lElectrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
260
80
70
220
200
Collector Current : IC [A]
Power Dissipation : PD [W]
240
180
160
140
120
100
80
60
40
0
25
50
75
100
125
150
40
30
20
0
175
Tj≦175ºC
VGE≧15V
0
25
50
75
100
125
150
175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
200
1000
10µs
100
10
100µs
1
0.1
0.01
180
Collector Current : IC [A]
Collector Current : IC [A]
50
10
20
0
60
TC= 25ºC
Single Pulse
1
10
140
120
100
80
60
40
Tj≦175ºC
VGE=15V
20
100
0
1000
Collector To Emitter Voltage : VCE[V]
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160
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
4/9
2020.09 - Rev.D
Datasheet
RGTH80TS65GC13
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
160
160
Tj= 25ºC
140
VGE= 20V
120
VGE= 10V
VGE= 15V
100
VGE= 12V
80
60
VGE= 8V
40
VGE= 15V
VGE= 12V
100
80
VGE= 10V
60
40
VGE= 8V
20
0
1
2
3
4
0
5
0
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
50
40
30
Tj= 175ºC
Tj= 25ºC
10
0
2
2
3
4
5
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
4
VCE= 10V
20
1
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Collector Current : IC [A]
60
0
VGE= 20V
120
20
0
Tj= 175ºC
140
Collector Current : IC [A]
Collector Current : IC [A]
Fig.6 Typical Output Characteristics
4
6
8
10
12
Gate To Emitter Voltage : VGE [V]
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VGE= 15V
IC= 80A
3
IC= 40A
2
IC= 20A
1
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
5/9
2020.09 - Rev.D
Datasheet
RGTH80TS65GC13
lElectrical Characteristic Curves
20
Tj= 25ºC
15
IC= 80A
IC= 40A
10
IC= 20A
5
0
5
10
15
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
20
Tj= 175ºC
15
IC= 80A
10
IC= 40A
IC= 20A
5
0
5
10
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
Switching Time [ns]
Switching Time [ns]
1000
td(off)
tf
td(on)
10
0
10
20
30
40
50
60
70
100
tf
tr
10
80
Collector Current : IC [A]
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td(off)
td(on)
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
tr
20
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
100
15
0
VCC=400V, IC=40A
VGE=15V, Tj=175ºC
Inductive load
10
20
30
40
50
Gate Resistance : RG [Ω]
6/9
2020.09 - Rev.D
Datasheet
RGTH80TS65GC13
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
10
1
Eoff
Eon
0.1
0.01
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
lElectrical Characteristic Curves
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
0
10
20
30
40
50
60
70
Eoff
1
Eon
0.1
0.01
80
VCC=400V, IC=40A
VGE=15V, Tj=175ºC
Inductive load
0
10
Collector Current : IC [A]
Capacitance [pF]
1000
Coes
Cres
f=1MHz
VGE=0V
Tj=25ºC
0.1
1
10
10
5
0
100
Collector To Emitter Voltage : VCE[V]
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50
15
Gate To Emitter Voltage : VGE [V]
Cies
1
0.01
40
Fig.16 Typical Gate Charge
10000
10
30
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
100
20
VCC=300V
IC=40A
Tj=25ºC
0
10
20
30
40
50
60
70
80
Gate Charge : Qg [nC]
7/9
2020.09 - Rev.D
Datasheet
RGTH80TS65GC13
lElectrical Characteristic Curves
Fig.17 IGBT Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
10
D= 0.5
1
0.1
0.2
PDM
0.1
t1
0.05
0.01
0.0001
0.02
0.01
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
Single Pulse
0.001
0.01
0.1
1
Pulse Width : t1[s]
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8/9
2020.09 - Rev.D
Datasheet
RGTH80TS65GC13
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
10%
VG
90%
IC
Fig.18 Inductive Load Circuit
10%
td(on)
tr
ton
td(off)
tf
toff
VCE
VCE(sat)
Fig.19 Inductive Load Waveform
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9/9
2020.09 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
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equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1107 B
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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Rev.001