TT8J2

4V Drive Pch MOSFET TT8J2 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (4V) (1) (2) (3) (4) Abbreviated symbol : J02 Applications Switching Each lead has same dimensions Packaging specifications Package Type TT8J2 Code Basic ordering unit (pieces) Taping TR 3000 Inner circuit (8) (7) (6) (5) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 ∗2 PD Tch Tstg Limits −30 ±20 ±2.5 ±10 −0.8 −10 1.25 1.0 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol ∗ Limits 100 125 Unit °C / W / TOTAL °C / W / ELEMENT Rth(ch-a) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.02 - Rev.A TT8J2 Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ − RDS (on) resistance − Forward transfer admittance Yfs ∗ 1.8 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ ∗Pulsed Data Sheet Typ. − − − − 60 95 115 − 460 65 40 7 20 35 14 4.8 1.8 1.2 Max. ±10 − −1 −2.5 84 130 160 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −2.5A, VGS= −10V ID= −1.2A, VGS= −4.5V ID= −1.2A, VGS= −4V VDS= −10V, ID= −2.5A VDS= −10V VGS=0V f=1MHz VDD −15V VGS= −10V ID= −1.2A RL 12.5Ω RG=10Ω VDD −15V VGS= −5V ID= −2.5A RL 6Ω / RG=10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −2.5A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.02 - Rev.A TT8J2 Electrical characteristic curves 10 8 6 4 VGS= -3.4V 2 0 0 0.2 0.4 0.6 0.8 1 VGS= -3.0V Ta=25°C Pulsed DRAIN CURRENT : -ID[A] VGS= -10V VGS= -6.0V VGS= -4.5V VGS= -4.0V 10 8 6 4 2 0 0 2 4 6 8 10 VGS= -3.0V Data Sheet DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] VGS= -10V VGS= -4.5V VGS= -4.0V Ta=25°C Pulsed VGS= -3.4V 10 VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.01 VGS= -2.6V 0.001 0 1 2 3 4 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics(Ⅱ ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 1000 1000 VGS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 VGS= -4.0V VGS= -4.5V VGS= -10V VGS= -4.5V Pulsed 100 100 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ ) 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] VGS= -4.0V Pulsed 10 REVERSE DRAIN CURRENT : -Is [A] VDS= -10V Pulsed 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ ) 10 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.1 0.01 0.01 0 0.5 1 1.5 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.02 - Rev.A TT8J2 500 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 400 300 200 100 0 0 5 10 15 ID= -2.5A 1000 SWITCHING TIME : t [ns] td(off) 100 tf 10 GATE-SOURCE VOLTAGE : -VGS [V] 8 6 4 2 0 0 2 4 6 Data Sheet Ta=25°C Pulsed Ta=25°C VDD= -15V VGS= -10V RG=10Ω Pulsed 10 ID= -1.2A 1 0.01 tr td(on) 0.1 1 10 Ta=25°C VDD= -15V ID= -2.5A RG=10Ω Pulsed 8 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 Ta=25°C f=1MHz VGS=0V 1000 CAPACITANCE : C [pF] Ciss 100 Coss Crss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.02 - Rev.A TT8J2 Measurement circuits Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.02 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.1