2SB1440

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1440 SOT-89-3L TRANSISTOR (PNP) 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z For low-frequency output amplification z Complementary to 2SD2185 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -1 μA hFE1 VCE=-2V, IC=-200mA 120 hFE2 VCE=-2V, IC=-1A 60 340 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.3 V Base- emitter saturation voltage VBE(sat) IC=-1A, IB=-50mA -1..2 V Transition frequency Collector output capacitance VCE=-10V, IC=50mA, f=200MHz fT Cob 80 VCB=-10V, IE=0, f=1MHz MHz 60 pF CLASSIFICATION OF h FE1 Rank Range Marking R S 120-240 170-340 1L A,Jun,2011 2SB1440 Typical Characteristics hFE —— IC Static Characteristic -0.22 800 -1.0mA - 0.20 (A) -0.9mA -0.6mA -0.5mA - 0.10 o Ta=100 C hFE -0.7mA 300 DC CURRENT GAIN COLLECTOR CURRENT IC -0.8mA - 0.15 VCE= -2V COMMON EMITTER Ta=25℃ -0.4mA 200 o Ta=25 C -0.3mA 100 - 0.05 -0.2mA IB=-0.1mA 50 0.00 0 - 1 - 2 - 3 - 4 COLLECTOR-EMITTER VOLTAGE VCEsat —— - 700 - 6 -5 VCE - 1E-3 - 7 (V) - 0.1 - 0.01 COLLECTOR CURRENT IC VBEsat —— - 1100 - 1 IC - 2 (A) IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) - 1000 - 100 Ta=100℃ Ta=25℃ - 900 - 800 Ta=25℃ - 700 Ta=100℃ - 600 - 500 - 400 - 10 - 1E-4 β=20 - 1E-3 - 0.01 - 0.1 COLLECTOR CURRENT 500 Cob / Cib —— IC - 1 β=20 - 300 - 1E-4 - 2 - 1E-3 (A) - 0.01 - 0.1 COLLECTOR CURRENT VCB / VEB Pc 600 —— IC - 1 - 2 (A) Ta f=1MHz IE=0 / IC=0 o Ta=25 C 100 CAPACITANCE C (pF) COLLECTOR POWER DISSIPATION Pc (mW) 500 Cib Cob 10 - 0.1 300 200 100 0 -1 REVERSE VOLTAGE 400 - 10 V (V) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) A,Jun,2011