3DD13003N3

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor 3DD13003N3 TRANSISTOR (NPN) TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1 . BASE 2. COLLECTOR 3. EMITTER  13003N3 Equivalent Circuit Logo 13003N3 'HYLFHFoGH ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13003N3 TO-126 Bulk 200pcs/Bag 3DD13003N3-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current 1.5 A PC Collector Power Dissipation 1.25 W RθJA Thermal Resistance From Junction To Ambient 100 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ www.jscj-elec.com 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO = IC= 1mA,IE 0 700 V Collector-emitter breakdown voltage = IC=10mA,IB 0 V(BR)CEO 400 V Emitter-base breakdown voltage = IE=1mA,IC 0 V(BR)EBO 9 VCB=700V,IE 0 ICBO = Collector cut-off current V 10 μA Collector cut-off current VCE=400V,IB 0 ICEO = 50 μA Emitter cut-off current = IEBO VEB=9V,IC 0 10 μA DC current gain hFE(1) = VCE=5V, IC 0.2A 10 hFE(2) = VCE=5V, IC 1mA 8 hFE(3) 5 VCE=5V, IC= 1.5A 40 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A,IB=0.25A 1.5 V tS Storage time IC= 250mA (UI9600) 2 4 μs CLASSIFICATION OF hFE(1) Range 10-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION OF tS Rank A1 Range 2-2.5 (μs ) www.jscj-elec.com A2 2.5-3(μs ) 2 B1 B2 3-3.5(μs ) 3.5-4 (μs ) Rev. - 2.0 Typical Characteristics hFE Static Characteristic 400 VCE=5V IB=18mA Ta=100℃ 30 hFE IB=16mA IC IB=14mA 300 DC CURRENT GAIN (mA) IC COMMON EMITTER Ta=25℃ IB=20mA COLLECTOR CURRENT —— 100 500 IB=12mA IB=10mA 200 IB=8mA IB=6mA Ta=25℃ 10 3 100 IB=4mA IB=2mA 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 1 0.01 10 0.1 IC VBEsat 1 0.3 COLLECTOR CURRENT 1 —— IC 0.3 Ta=100℃ 0.1 Ta=25℃ 0.03 IC 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 β=4 0.01 0.02 2 (A) 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0.03 (V) 0.05 0.1 1 0.3 COLLECTOR CURRENT Cob/ Cib —— IC 0.4 0.02 3 β=4 0.05 (A) 0.1 1 0.3 COLLECTOR CURRENT VCB/ VEB PC 1000 —— IC 3 (A) Ta 1.50 f=1MHz IE=0/IC=0 Cib Ta=25℃ COLLECTOR POWER DISSIPATION PC (W) 1.25 CAPACITANCE C (pF) 300 100 Cob 30 10 0.1 0.75 0.50 0.25 0.00 0.3 1 REVERSE VOLTAGE www.jscj-elec.com 1.00 3 VR 10 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) Rev. - 2.0 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.jscj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Rev. - 2.0