8050SS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050SS TRANSISTOR (NPN) FEATURES z General Purpose Switching and Amplification. TO – 92 1. EMITTER 2. COLLECTOR 3. BASE  8050SS Z z Equivalent Circuit 8050SS 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH LIQRQHWKHQRUPDOGHYLFH Z=Rank of hFE ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method 8050SS 72 %XON  1000pcs/Bag 8050SS7$ 72 7DSH  2000pcs/Box Pack Quantity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V 1.5 A 1 W IC Collector Current PC Collector Power Dissipation R θJA Thermal Resistance From Junction To Ambient 125 ℃ /W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 D,Aug,2017  Ta =25 Я unless otherwise specified Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=40V,IE=0 0.1 μA Collector cut-off current ICEO VCE=20V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE(1) VCE=1V, IC=100mA 85 hFE(2) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA,IB=80mA 0.5 V Base-emitter saturation voltage VBE (sat) IC=800mA,IB=80mA 1.2 V DC current gain 300 Base-emitter voltage VBE VCE=1V, IC=10mA 1.0 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 15 pF Transition frequency fT VCE=10V,IC= 50mA, f=30MHz 100 MHz CLASSIFICATION OF hFE(1) RANK RANGE BCD 85-160 www.cj-elec.com 120-200 160-300  D,Aug,2017 Typical Characteristics Static Characteristic 0.30 hFE 0.8mA 0.20 DC CURRENT GAIN (A) 0.9mA IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 1mA 0.25 hFE 1000 0.7mA 0.6mA 0.15 0.5mA 0.4mA 0.10 —— IC Ta=100℃ 300 Ta=25℃ 100 0.3mA 0.2mA 0.05 COMMON EMITTER VCE= 1V IB=0.1mA 0.00 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat —— 7 1 10 100 COLLECTOR CURRENT IC VBEsat —— 1200 1000 1500 IC (mA) IC 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 6 VCE (V) 100 Ta=100 ℃ Ta=25℃ 10 800 Ta=25℃ 600 Ta=100 ℃ 400 β=10 1 1 10 100 COLLECTOR CURREMT IC 1500 —— IC β=10 1000 1500 1 10 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 —— 100 IC VCB/VEB f=1MHz IE=0/IC=0 1000 Ta=25 ℃ (pF) (mA) Cib CAPACITANCE T= a 25 ℃ T= a 10 0℃ 100 C IC COLLECTOR CURRENT 1000 1500 (mA) 10 Cob 10 COMMON EMITTER VCE= 1V 1 0.1 1 0 300 600 900 1200 1 BESE-EMITER VOLTAGE VBE (mV) IC fT TRANSITION FREQUENCY PC 1.2 (MHz) —— COLLECTOR POWER DISSIPATION PC (W) fT 1000 10 REVERSE VOLTAGE 100 10 COMMON EMITTER VCE=10V —— V 20 (V) Ta 1.0 0.8 0.6 0.4 0.2 Ta=25℃ 1 2 10 COLLECTOR CURRENT www.cj-elec.com 0.0 100 IC 0 (mA) 3 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 150 D,Aug,2017 723DFNDJH2XWOLQH'LPHQVLRQV 6\PERO A A1 b c D D1 E e e1 L  h 'LPHQVLRQV,Q0LOOLPHWHUV 'LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0LQ 0D[ 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 726XJJHVWHG3DG/D\RXW ZZZFMHOHFFRPD,Aug,2017 727DSHDQG5HHO ZZZFMHOHFFRPD,Aug,2017