8550S-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR (PNP) TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit  8550S 8550S 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH Z LIQRQHWKHQRUPDOGHYLFH z Z=Rank of h FE ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 8550S TO-92 Bulk 1000pcs/Bag 8550S-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 625 mW TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ www.jscj-elec.com 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -20V,IB=0 -0.1 uA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA hFE(1) VCE= -1V, IC= -50mA 85 hFE(2) VCE= -1V, IC= -500mA 50 VCE(sat) IC=-500mA, IB=-50mA -0.6 V VBE(sat) IC=-500mA, IB=-50mA -1.2 V 400 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCE=- 6V, IC=-20mA fT Transition frequency 150 f =30MHz MHz CLASSIFICATION OF hFE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics hFE Static Characteristic -90 -400uA COMMON EMITTER Ta=25℃ -80 Ta=100℃ -320uA hFE (mA) -60 -280uA DC CURRENT GAIN COLLECTOR CURRENT IC -360uA -70 -240uA -50 -200uA -40 -160uA -30 -120uA Ta=25℃ 100 -80uA -20 IB=-40uA -10 COMMON EMITTER VCE=-1V -0 10 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VBEsat —— -10 -12 -1 1 T a= -100 COLLECTOR CURRENT VCEsat IC IC -500 (mA) IC —— -500 2 5℃ T a= -800 -10 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC —— 500 00 ℃ -100 0℃ 10 T a= ℃ 25 T a= β=10 β=10 -10 -400 -1 -10 -100 COLLECTOR CURRENT IC —— IC -1 -500 -100 COLLECTOR CURRENT (mA) fT VBE —— IC -500 (mA) IC 400 (MHz) -500 fT -100 TRANSITION FREQUENCY T =2 5℃ a T =1 00 ℃ a COLLECTOR CURRENT IC (mA) -10 -10 100 COMMON EMITTER VCE=-6V COMMON EMITTER VCE=-1V Ta=25℃ 10 -1 -0 -300 -600 -900 -1 -1200 -10 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) Cib Cob CAPACITANCE C PC 750 50 10 -100 COLLECTOR CURRENT BASE-EMITER VOLTAGE VBE (mV) f=1MHz IE=0/IC=0 —— IC (mA) Ta 625 500 375 250 125 Ta=25 ℃ 1 -0.1 0 -1 REVERSE VOLTAGE www.jscj-elec.com -10 V 0 -20 (V) 25 50 75 100 AMBIENT TEMPERATURE 3 Ta 125 150 (℃ ) Rev. - 2.0 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.146 0.130 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 TO-92 7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0