8550SS-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR (PNP) 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V -1.5 A 1 W IC Collector Current -Continuous PC Collector Power Dissipation Thermal Resistance From Junction To Ambient 125 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V,IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA hFE(1) VCE=-1, IC=-100mA 85 hFE(2) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA,IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA,IB=-80mA -1.2 V DC current gain fT Transition frequency VCE=-10V,IC=-50mA,f=30MHz 300 100 MHz CLASSIFICATION OF hFE(1) RANK B C D RANGE 85-160 120-200 160-300 B,Jan,2012 8550SS Typical Characteristics Static Characteristic -0.25 hFE - 0.9mA -0.8mA -0.20 -0.7mA -0.6mA -0.15 —— COMMON EMITTER Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 -1mA IC (A) -0.30 -0.5mA -0.4mA -0.10 IC Ta=100℃ 300 Ta=25℃ 100 -0.3mA -0.2mA -0.05 COMMON EMITTER VCE= -1V IB=-0.1mA -0.00 10 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VCEsat —— -7 -1 -10 -100 COLLECTOR CURRENT IC VBEsat —— -1200 -1000 -1500 IC (mA) IC -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 -6 VCE (V) -100 Ta=100 ℃ Ta=25℃ -10 -800 Ta=25℃ -600 Ta=100 ℃ -400 β=10 -1 -1 -10 -100 COLLECTOR CURREMT IC -1500 —— IC β=10 -1000 -1500 -1 -10 COLLECTOR CURREMT (mA) VBE -100 Cob/Cib 100 —— IC (mA) VCB/VEB f=1MHz IE=0/IC=0 -1000 Ta=25 ℃ Cob C CAPACITANCE T= a 25 ℃ T= a 10 0℃ COLLECTOR CURRENT IC (pF) (mA) Cib -100 -1000 -1500 -10 10 COMMON EMITTER VCE= -1V 1 -0.1 -1 -0 -300 -600 -900 -1200 -1 BESE-EMMITER VOLTAGE VBE (mV) IC fT TRANSITION FREQUENCY 200 COMMON EMITTER VCE=-10V Ta=25℃ 100 -5 -10 -30 COLLECTOR CURRENT PC 1.2 (MHz) —— COLLECTOR POWER DISSIPATION PC (W) fT 300 (mA) —— V -20 (V) Ta 1.0 0.8 0.6 0.4 0.2 -30 -100 IC -10 REVERSE VOLTAGE 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 150 B,Jan,2012