BC847PN

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN DUAL TRANSISTOR (NPN+PNP) SOT-363 FEATURES z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7P MAXIMUM RATINGS TR1 (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 0.1 A PC Collector Power Dissipation 200 mW TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1μA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 15 nA DC current gain hFE VCE=5V,IC=2mA Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Noise figure www.jscj-elec.com 200 450 VCE(sat) IC=10mA,IB=0.5mA 0.25 V VCE(sat) IC=100mA,IB=5mA 0.6 V VBE(sat) IC=10mA,IB=0.5mA 0.7 V VBE(sat) IC=100mA,IB=5mA 0.9 V VBE(on) VCE=5V,IC=2mA VBE(on) Cob fT NF 0.7 V VCE=5V,IC=10mA 0.72 V VCB=10V,IE=0,f=1MHz 6.0 pF VCE=5V,IC=10mA,f=100MHz VCE=5V,Ic=0.2mA, f=1kHz,Rg=2KΩ,∆f=200Hz 1 0.58 100 MHz 10 dB Rev. - 2.0 MAXIMUM RATINGS TR2 (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.1 A PC* Collector Power Dissipation 200 mW TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ CHARACTERISTICS of TR2 (PNP Transistor) (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-1μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -15 nA DC current gain hFE1 VCE=-5V,IC=-2mA Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector output capacitance 475 VCE(sat) IC=-10mA,IB=-0.5mA -0.3 V VCE(sat) IC=-100mA,IB=-5mA -0.65 V VBE(sat) IC=-10mA,IB=-0.5mA VBE(sat) IC=-100mA,IB=-5mA VBE(on) VCE=-5V,IC=-2mA VBE(on) VCE=-5V,IC=-10mA Cob Transition frequency fT Noise figure NF www.jscj-elec.com 220 -0.7 -0.6 VCB=-10V,IE=0,f=1MHz VCE=-5V,IC=-10mA,f=100MHz VCE=-5V,Ic=-0.2mA, f=1kHz,Rg=2KΩ, ∆f=200Hz 2 V -0.95 V -0.75 V -0.82 V 4.5 pF 100 MHz 10 dB Rev. - 2.0 Typical Characteristics BC847PN/TR1 Static Characteristic COMMON EMITTER Ta=25℃ (mA) -3.5 -10uA -9.0uA IC -3.0 COLLECTOR CURRENT DC CURRENT GAIN -7.0uA -6.0uA -2.0 -5.0uA -1.5 —— IC COMMON EMITTER VCE= -5V Ta=100℃ -8.0uA -2.5 hFE 600 hFE -4.0 -4.0uA 400 Ta=25℃ 200 -3.0uA -1.0 -2.0uA -0.5 IB=-1.0uA -0.0 -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1 IC VBEsat —— -1000 -100 -10 COLLECTOR CURRENT (V) IC (mA) IC -800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 VCE 0 -0.1 -12 Ta=100 ℃ -100 Ta=25℃ Ta=25℃ -600 Ta=100 ℃ -400 β=20 β=20 -10 -0.1 -1 IC -100 -100 -10 COLLECTOR CURREMT —— IC -200 -0.1 -1 VBE Cob/Cib 100 -100 -10 COLLECTOR CURREMT (mA) —— IC (mA) VCB/VEB f=1MHz IE=0/IC=0 (pF) T= a 25 ℃ CAPACITANCE C -10 T= a 1 00 ℃ COLLECTOR CURRENT IC (mA) Ta=25 ℃ -1 Cib 10 Cob COMMON EMITTER VCE= -5V 1 -0.1 -0.1 -0 -300 -600 -1200 -900 -1 fT —— IC COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY PC 250 (MHz) 300 -10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 200 100 VCE=-5V —— V -20 (V) Ta 200 150 100 50 o Ta=25 C 0 0 -0 -4 -8 -12 COLLECTOR CURRENT www.jscj-elec.com -16 IC 0 -20 25 50 75 AMBIENT TEMPERATURE (mA) 3 100 Ta 125 150 (℃ ) Rev. - 2.0 Typical Characteristics BC847PN/TR2 Static Characteristic COMMON EMITTER Ta=25℃ (mA) -3.5 -10uA -9.0uA IC -3.0 COLLECTOR CURRENT DC CURRENT GAIN -7.0uA -6.0uA -2.0 -5.0uA -1.5 —— IC COMMON EMITTER VCE= -5V Ta=100℃ -8.0uA -2.5 hFE 600 hFE -4.0 -4.0uA 400 Ta=25℃ 200 -3.0uA -1.0 -2.0uA -0.5 IB=-1.0uA -0.0 -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1 -10 COLLECTOR CURRENT (V) IC VBEsat —— -1000 -100 IC (mA) IC -800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 VCE 0 -0.1 -12 Ta=100 ℃ -100 Ta=25℃ Ta=25℃ -600 Ta=100 ℃ -400 β=20 β=20 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -200 -0.1 -100 -1 -10 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 —— IC -100 (mA) VCB/VEB f=1MHz IE=0/IC=0 (pF) T= a 25 ℃ CAPACITANCE C -10 T= a 1 00 ℃ COLLECTOR CURRENT IC (mA) Ta=25 ℃ -1 Cib 10 Cob COMMON EMITTER VCE= -5V 1 -0.1 -0.1 -0 -300 -900 -600 -1200 -1 fT —— IC COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY PC 250 (MHz) 300 -10 V REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 200 100 VCE=-5V —— -20 (V) Ta 200 150 100 50 o Ta=25 C 0 0 -0 -4 -8 -12 COLLECTOR CURRENT www.jscj-elec.com -16 IC 0 -20 25 50 75 AMBIENT TEMPERATURE (mA) 4 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Max Min 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 2.0 SOT-363 Tape and Reel www.jscj-elec.com 6 Rev. - 2.0