RB751S-40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB751S-40 Schottky barrier Diode SOD-523 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2 MARKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 30 mA Peak forward surge current IFSM 200 mA Power dissipation 3' 150 mW 5ș-$ 667 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg -55~+150 ℃ Thermal Resistance Junction to Ambient Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Forward voltage VF 0.37 V Reverse current IR 0.5 μA Capacitance between terminals CT 2 pF Conditions IF=1mA VR=30V VR=1V,f=1MHZ B,Jul,2012 RB751S-40 Typical Characteristics Forward Reverse Characteristics 100 10 10 1 Characteristics o T= a 2 5 FORWARD CURRENT o C REVERSE CURRENT IR a IF T =1 00 (uA) o C (mA) Ta=100 C 1 0.1 0.01 0.0 0.1 o Ta=25 C 0.01 1E-3 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 0 5 10 (V) 15 20 REVERSE VOLTAGE 25 VR 30 35 (V) Power Derating Curve Capacitance Characteristics 10 200 9 Ta=25℃ 8 f=1MHz (mW) 6 150 PD 5 4 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 7 3 2 1 100 50 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) B,Jul,2012