STS2620

S T S 2620 S amHop Microelectronics C orp. F e b, 2 5 2 0 0 5 V e r1 . 1 D ua l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor ( N a nd P C ha nne l) P R O D U C T S U MMA R Y (N-C hannel) V DS S 20V P R O D U C T S U MMA R Y (P -C hannel) V DS S -20V ID 2 .5A R DS (ON) ( m W ) Max ID -2A R DS (ON) ( m W ) Max 8 0 @ V G S = 4 .5V 1 10 @ V G S = 2 .5V D1 130 @ V G S = -4.5V 190 @ V G S = -2.5V D2 TS OP 6 T op V ie w G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 N-ch G2 S2 P -ch A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T c =2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG N - C ha nne l P - C ha nne l 20 10 2.5 8 1. 25 1. 0 -5 5 to 1 5 0 -20 10 -2 -7 -1 . 2 5 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 125 C /W 1 S T S 2620 N-C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 1 6 V, V G S = 0 V V G S = 1 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S = 4 . 5 V, I D = 2 . 5 A V G S = 2. 5V, ID= 2A V D S = 5 V, V G S = 4 . 5 V V D S = 5 V, I D = 2 . 5 A Min Typ C Ma x U nit 20 1 100 0. 5 0. 8 65 90 6 7 223 68 53 1. 5 80 110 V uA nA V m-ohm m-ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =10V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D D = 1 0 V, ID = 1A , V G S = 4 . 5 V, R G E N = 6 o hm 10. 5 9. 8 15. 2 11. 8 3. 9 ns ns ns ns nC nC nC V DS =10V, ID = 2. 5A , V G S =4. 5V 1. 3 0. 8 2 S T S 2620 P -C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A =25 C unles s otherwis e noted) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = - 2 5 0 uA V D S = -1 6 V, V G S = 0 V V G S = 1 0 V, V D S = 0 V V DS = V G S , ID =-250uA V G S = -4 . 5 V, I D = -2 . 0 A V G S = -2 . 5 V, I D = -1 . 0 A V D S = -5 V, V G S = -4 . 5 V V D S = -5 V, I D = -2 . 0 A Min Typ C Ma x U nit -2 0 1 100 -0 . 5 -0 . 8 -1 . 5 115 175 -5 6 293 65 50 130 190 V uA nA V m-ohm m-ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V D S = -2 0 V, V G S = 0 V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D D = -1 0 V, I D = -1 A , V G S = -4 . 5 V, R G E N = 6 o hm 12. 6 13. 7 81. 5 42. 1 3. 4 ns ns ns ns nC nC nC V D S = -1 0 V, I D = -2 A , V G S = -4 . 5 V 0. 8 1 2 S T S 2620 E L E C T R I C A L C H A R AC T E R I S T I C S ( T A = 2 5 C u n l e s s o t h e r w i s e n o t e d ) Parameter Diode Forward Voltage Sy m b o l V SD Co n d i t i o n VGS = 0V, Is =1.25A VGS = 0V, Is =-1.25A N-Ch P-Ch Min Typ Max Unit 0.84 -0.85 1.2 -1.2 C D R A I N - S O U R C E D I O D E C H A R AC T E R I S T I C S b 5 V N o te s a.Surface Mounted on FR4 Board, t＜10sec. b.Pulse Test:Pulse Width＜300μs, Duty Cycle ＜ 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 V G S =10V 16 V G S =4V 15 25 C 12 -55 C V G S =4.5V ID , D ra in C urre nt( A ) I D , D ra in C urre nt ( A ) V G S =3V 12 T j=125 C 9 6 8 V G S =2V 4 0 3 0 0. 0 0 0. 5 1 1. 5 2 2. 5 3 0. 6 1. 2 1. 8 2. 4 3. 0 3. 6 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 2. 2 500 400 300 200 100 C rs s 0 0 5 10 15 20 25 30 0 C is s F igure 2 . T ra ns fe r C ha ra c te ris tic s V G S =4.5V I D =2.5A R DS (ON) , O n-R e s is ta nc e N ormalized 1. 8 1. 4 1. 0 0. 6 0. 2 C , C a pa c ita nc e ( pF ) C os s -5 0 -2 5 0 25 50 75 100 125 T j( C ) V D S , D ra in-to S ourc e V olta ge ( V ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture 4 S T S 2620 N-C hannel B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gF S , T rans conductance (S ) 8 6 4 2 0 0 3 6 9 V DS =5V 12 15 Is , S ource-drain current (A) 10 10 1 0 0.4 0.8 1.2 1.6 T J =25 C 2.0 2.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T S 2620 P-C hannel 20 -V G S =10V 15 -V G S =4.5V -V G S =6V 25 C - I D , D ra in C urre nt( A ) -I D , D ra in C urre nt ( A ) 16 12 -55 C 9 T j=125 C 12 -V G S =4V -V G S =3V 8 4 6 3 0 0. 0 -V G S =2V 0 0 0. 5 1 1. 5 2 2. 5 3 0. 8 1. 6 2. 4 3. 2 4. 0 4. 8 -V D S , D ra in-to-S ourc e V olta ge ( V ) -V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 2. 2 500 400 300 200 100 0 C rs s 0 5 10 15 20 25 30 C is s F igure 2 . T ra ns fe r C ha ra c te ris tic s V G S =-4.5V I D =-2.0A R DS (ON) , O n-R e s is ta nc e ( N orma liz e d) 1. 8 1. 4 1. 0 0. 6 0. 2 0 C , C a pa c ita nc e ( pF ) C os s -5 0 -2 5 0 25 50 75 100 125 T j( C ) -V D S , D ra in-to S ourc e V olta ge ( V ) T j, J unction T emperature ( C ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture 6 S T S 2620 P-C hannel B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =-250uA 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 9 F igure 6. B reakdown V oltage V ariation with T emperature 20 gF S , T rans conductance (S ) 6 4.5 3 1.5 0 0 3 6 9 V DS =-5V 12 15 -Is , S ource-drain current (A) 7.5 10 1 0 0.4 0.8 1.2 1.6 T J =25 C 2.0 2.4 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 7 S T S 2620 N-C hannel V G S , G ate to S ource V oltage (V ) 5 I D , Drain C urrent (A) 50 4 3 2 1 0 0 V DS =4.5V I D =2.5A 10 RD ON S( )L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 V G S =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 0.7 1.4 2 .1 2 .8 3.5 4.2 4.9 5.6 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area P-C hannel -V G S , G ate to S ource V oltage (V ) 5 -I D , Drain C urrent (A) 13 4 3 2 1 0 0 V DS =-4.5V I D =-2.0A 10 RD S ( ) ON L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 V G S =-4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 0.5 1 1 .5 2 2.5 3 3.5 4 Q g, T otal G ate C harge (nC ) - V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 8 S T S 2620 V DD ton V IN D VG S RL V OUT V OUT R GE N G 90% 10% toff tr 90% td(on) td(off) 90% 10% tf INVE R TE D 5 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 10 Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.05 0.1 t2 0.01 0.00001 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 1. 2. 3. 4. R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) P-C hannel 10 Normalized Transient Thermal Resistance Normalized Thermal Transient Impedance Curve Square Wave Pulse Duration(sec) 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 95 S T S 2620 10 S T S 2620 TSOP6 Tape and Reel Data TSOP6 Carrier Tape TSOP6 Reel 11