S amHop Microelectronics C orp.
S T S 3400
S e p. 2 1 2 0 0 4
N - C h a n n e l E n h a n c e m e n t M o d e F i e l d E f f e c t T r a n s i s to r
P R O D U C T S U MMA R Y
V DS S
30V
F E AT U R E S
( m W ) Max
ID
3 .5A
R DS (ON)
S upe r high de ns e c e ll de s ign for low R D S (O N ) .
50 @ V G S = 1 0V 70 @ V G S =4.5V
R ugge d a nd re lia ble . S O T -2 3 pa c ka ge .
D
S OT-23
D S G
G
S
A B S O L U T E MA X IMU M R A T IN G S ( T A =2 5 C u n l e s s o th e r w i s e n o te d )
P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit 30 20 3. 5 13 1. 25 1.25 -5 5 to 1 5 0 U nit V V A A A W C
T H E R MA L C H A R A C T E R I S T I C S
T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R thJ A 100 C /W
1
S T S 3400
E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d)
P a ra me te r O F F C H A R A C T E R IS T IC S
D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS
c
S ymbol
C ondition
V G S = 0 V , I D = 2 5 0 uA V D S = 2 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S = 1 0 V, I D = 3 . 5 A V G S = 4 . 5 V, I D = 2 A V D S = 5 V, V G S = 1 0 V V D S = 5 V, I D = 3 . 5 A
Min Typ C Ma x U nit
30 1 100 1 1. 7 40 55 10 6 600 125 95 2. 5 50 70 V uA nA V
m-ohm m-ohm
O N C H A R A C T E R IS T IC S b
G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e
A S
PF PF PF
D Y N A MI C C H A R A C T E R I S T I C S c
Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =10V, V G S = 0V f =1. 0MH Z
S W IT C H IN G C H A R A C T E R IS T IC S
T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge
tD(O N) tr tD(O F F ) tf Qg Q gs Q gd
V D D = 1 0 V, ID = 1A , V G S = 1 0 V, R L = 1 0 o hm R G E N = 6 o hm V DS =10V, ID = 3. 5A , V G S =4. 5V
14. 2 4. 8 19. 6 9. 3 6. 8 3. 1 1. 95
ns ns ns ns nC nC nC
2
S T S 3400
E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d)
P a ra me te r
5
D iode F orwa rd V olta ge
S y m bo l
VSD
C ondition
V G S = 0 V , I s =1 . 2 5 A
M in T y p M a x U n it
0. 82 1. 2 V
C
D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b
N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting.
20 V G S =5V 16 20
V G S =10,9,8,7,6V
25 25 C -55 C
ID , D ra in C urre nt( A )
I D , D ra in C urre nt ( A )
T j=125 C 15
12
V G S =4V
8 4 0
10
V G S =3V
5 0 0. 0
0
1
2
3
4
5
6
0. 6
1. 2
1. 8
2. 4
3. 0
3. 6
V D S , D ra in-to-S ourc e V olta ge ( V )
V G S , G a te -to-S ourc e V olta ge ( V )
F igure 1 . O utput C ha ra c te ris tic s
2. 2 1000 1. 8 800 600 400 200 C rs s 0 0 5 10 15 20 25 30 0 C is s
F igure 2 . T ra ns fe r C ha ra c te ris tic s
V G S =10V I D =3.5A
RDS(ON), On-Resistance ( N orma liz e d)
C , C a pa c ita nc e ( pF )
1. 4 1. 0 0. 6 0. 2
C os s
-5 0
-2 5
0
25
50
75
100 125 T j( C )
V D S , D ra in-to S ourc e V olta ge ( V )
F igure 3 . C a pa c ita nc e
F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture
3
S T S 3400
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
with T emperature
12
F igure 6. B reakdown V oltage V ariation with T emperature
20
gF S , T rans conductance (S )
8 6 4 2 0 0 5 10 15 V DS =5V 20 25
Is , S ource-drain current (A)
10
10
1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
10
I D , Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
50
V G S , G ate to S ource V oltage (V )
8 6 4 2 0 0
V DS =10V I D =3.5A
10
RD
S
(
) ON
L im
it
10
11
DC
10
ms
0m
s
1s
0.1 0.03
V G S =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50
2
4
6
8
10
12 14
16
Q g, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe O perating Area
4
S T S 3400
V DD ton toff tr
90%
5
VG S R GE N
V IN D G
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
90%
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
10
F igure 12. S witching Waveforms
Normalized Transient
Thermal Resistance
1
0.5 0.2
P DM t1
on
0.1
0.1 0.05 0.02 1. 2. 3. 4.
t2
0.01 0.00001
0.01
Single Pulse 0.0001 0.001 0.01 0.1 1 10
R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
S T S 3400
A
L G F M
J
B
C
I
H
E
D (TYP .)
2.70 2.40 1.40 0.35 0
3.10 2.80 1.60 0.50 0.10 0.55
0.106 0.094 0.055 0.014 0
0.122 0.110 0.063 0.020 0.004
F
G
0.45 1.90 REF. 1.00 0.10 0.40 0.45 0°
0.022 0.018 0.075 REF. 0.039 0.004 0.016 0.033 0° 0.051 0.008 0.045 10°
I J L M
1.30 0.20 1.15 10°
6
S T S 3400
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
UNIT:㎜ PACKAGE
SOT-23
A0 3.20 ±0.10
B0 3.00 ±0.10
K0 1.33 ±0.10
D0 ∮1.00 +0.25
D1 ∮1.50 +0.10
E
8.00 +0.30 -0.10
E1 1.75 ±0.10
E2 3.50 ±0.05
P0 4.00 ±0.10
P1 4.00 ±0.10
P2 2.00 ±0.05
T 0.20 ±0.02
SOT-23 Reel
UNIT:㎜ TAPE SIZE 8㎜ REEL SIZE ∮178 M ∮178 ±1 N ∮60 ±1 W 9.00 ±0.5 W1 12.00 ±0.5 H ∮13.5 ±0.5 K 10.5 S 2.00 ±0.5 G ∮10.0 R 5.00 V 18.00
7
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