STU413S

STU/D413S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -19A R DS(ON) (m Ω) Max 48 @ VGS=10V 78 @ VGS=4.5V G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit -40 ±20 -19 -15 -58 16 Units V V A A A mJ W W °C TC=25°C T C=70°C d -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C 32 20 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient 4 a °C/W °C/W 50 Details are subject to change without notice. Aug,08,2008 1 www.samhop.com.tw STU/D413S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-32V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c -40 1 ±10 uA uA VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-9.5A VGS=-4.5V , ID=-7.5A VDS=-10V , ID=-9.5A -1 -1.8 38 58 10 -3 48 78 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-20V,VGS=0V f=1.0MHz 895 138 67 14 14 54 10 14.5 7 2.1 3.4 pF pF pF ns ns ns ns nC nC nC nC SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-20V ID=-1.0A VGS=-10V RGEN=3.3 ohm VDS=-20V,ID=-9.5A,VGS=-10V VDS=-20V,ID=-9.5A,VGS=-4.5V VDS=-20V,ID=-9.5A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Is Maximum Continuous Drain-Source Forward Current VSD Diode Forward Voltage b -2.0 -0.77 -1.3 A V VGS=0V,IS= -2.0A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ 300us, Duty Cycle < 2%. _ b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13) Aug,08,2008 2 www.samhop.com.tw S TU/D413S Ver 1.0 20 V G S =-10V V G S =-4.5V V G S =-5V 15 I D, Drain Current(A) V G S =-4V 12 V G S =-3.5V 8 4 I D, Drain Current(A) 16 12 9 6 25 C 3 125 C V G S =-3V -55 C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 100 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0 V G S =-4.5V I D =-7.5A V G S =-10V I D = -9.5A R DS(on)(m Ω) 80 V G S =-4.5V 60 40 V G S =-10V 20 1 1 4 8 12 16 20 R DS(on), On-Resistance Normalized 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 V DS =V G S I D =-250uA 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,08,2008 3 www.samhop.com.tw S TU/D413S Ver 1.0 120 100 20.0 Is, Source-drain current(A) I D =-9.5A 10.0 5.0 75 C 125 C 125 R DS(on)(m Ω) 80 125 C 60 40 20 0 75 C 25 C 25 C 1.0 0 2 4 6 8 10 0 0.24 0.48 0.72 0.96 1.20 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1500 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1250 C, Capacitance(pF) 8 6 4 2 0 0 C is s 1000 750 500 Cos s 250 0 0 5 10 15 20 25 30 C rs s V DS = -20V I D =-9.5A 3 6 9 12 15 18 21 24 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 100 I D, Drain Current(A) it 1m s 10 Switching Time(ns) 100 60 10 TD(off) Tr TD(on) Tf 10 R ( DS ) ON L im 0u s 10 m DC s 1 1 6 10 V DS =-20V,ID=-1A V G S =-10V 1 V G S =-10V S ingle P ulse T A =25 C 1 10 40 100 60 100 300 600 0.1 Rg, Gate Resistance(Ω) VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,08,2008 4 www.samhop.com.tw STU/D413S Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 P DM 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Aug,08,2008 5 www.samhop.com.tw S TU/D413S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 Aug,08,2008 6 www.samhop.com.tw S TU/D413S Ver 1.0 E b3 L3 TO-252 A C2 E1 D H b2 L4 e b L2 L L1 A1 C2 b b2 b3 L2 A1 L4 L L1 L3 10 483 0.814 864 232 0.508 6.000 6.400 4.902 2.290 9.601 0.010 0.066 1.397 2.743 1.100 387 0.584 0.889 1.092 436 REF. 00 6.604 5.004 BSC 210 0.127 0.940 1.651 REF. REF. 7 0.019 32 4 6 0.020 36 0.193 0.090 78 0.0004 0.026 0.055 0.108 0.043 4 0.023 0.035 43 4 REF. 4 0.197 BSC 402 0.005 0.037 0.065 REF. REF. Aug,08,2008 7 www.samhop.com.tw S TU/D413S Ver 1.0 TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data 540 + 1.5 2~ 3.0 4.5 5.25 1.65 1.4 2.25 6.60 0.4 7.50 1.25 1.90 " A" 5.5 19.75 TO-252 Carrier Tape T D1 P2 P1 E1 E2 E B0 K0 UNIT: PACKAGE TO-252 (16 A0 6.96 0.1 A0 FEED DIRECTION D0 P0 B0 10.49 0.1 K0 2.79 0.1 D0 2 D1 1.5 + 0.1 -0 E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8.0 0.1 P1 4.0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252 Reel T S V R M N G H W UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2.2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R K V Aug,08,2008 8 www.samhop.com.tw