2SC6144SG

Ordering number : ENA1800 2SC6144SG SANYO Semiconductors DATA SHEET 2SC6144SG Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers, lamp drivers, motor drivers Features • • • • Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.)) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C, PT≤1s Conditions Ratings 60 50 5 10 13 2 25 150 --55 to +150 Unit V V V A A A W °C °C Package Dimensions unit : mm (typ) 7529-002 10.16 3.18 3.3 4.7 2.54 Product & Package Information • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 6.68 Marking A Electrical Connection 2 15.8 3.23 15.87 1 2.76 C6144 SG LOT No. (0.84) 1.47 MAX 0.8 1 2 3 12.98 3 DETAIL-A 0.5 FRAME EMC ( 1.0) 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220F-3SG 2.54 2.54 http://semicon.sanyo.com/en/network 72110FA TK IM TC-00002381 No. A1800-1/4 2SC6144SG Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=270mA VCE=10V, IC=3A VCB=10V, f=1MHz IC=6A, IB=300mA IC=6A, IB=300mA IC=100μA, IE=0A IC=1mA, RBE=∞ IE=100μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 50 5 62 350 25 200 330 60 180 360 1.2 Conditions Ratings min typ max 10 10 560 MHz pF mV V V V V ns ns ns Unit μA μA Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω IB1 IB2 RB + 100μF VBE= --5V + 470μF VCC=20V OUTPUT RL IC=20IB1= --20IB2=5A 10 9 IC -- VCE mA 40mA 35mA mA 100m 60 25 80 mA 40mA 35mA A 5.0 IC -- VCE A 18m A 6m 1 20m A 14mA 30mA 4.5 12mA Collector Current, IC -- A Collector Current, IC -- A 8 7 6 5 4 3 2 1 0 25mA 45mA 50mA 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 20mA 10mA 8mA 15mA 10mA 30m A 6mA 4mA 2mA IB=0mA 0 0.5 1.0 1.5 2.0 IT13455 5mA IB=0mA 0 1 2 3 4 5 IT13454 0 Collector-to-Emitter Voltage, VCE -- V 25 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 7 5 hFE -- IC VCE=2V VCE=2V Ta=75°C Collector Current, IC -- A 20 DC Current Gain, hFE 3 25°C 2 15 --25°C 100 7 5 10 5 0 25° C --25 °C Ta =7 5° C 0 0.5 1.0 1.5 IT13456 3 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A IT13457 No. A1800-2/4 2SC6144SG 5 hFE -- IC Ta=25°C Gain-Bandwidth Product, fT -- MHz 7 5 3 2 fT -- IC VCE=10V 3 =2. V CE DC Current Gain, hFE 2 0. 2V 0.5 V 0V 100 7 5 3 2 0.7V 100 7 5 1.0V 3 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 Cob -- VCB IT13458 1.0 7 Collector Current, IC -- A VCE(sat) -- IC 5 7 10 IT13459 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=20 Output Capacitance, Cob -- pF 3 2 5 3 2 0.1 7 5 3 2 0.01 7 5 0.01 100 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 23 5 7 0.1 23 --2 5 7 1.0 5° C 25 23 5 7 10 = Ta °C °C 75 23 5 Collector-to-Base Voltage, VCB -- V 1.0 7 VCE(sat) -- IC IT13460 3 Collector Current, IC -- A IT13461 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=20 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 1.0 0.1 7 5 3 2 0.01 0.01 Ta= --25°C 7 5 =7 Ta C 5° --2 °C C 5° 25°C 75°C 25 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Forward Bias A S O ICP=13A 10 0m Collector Current, IC -- A IT13462 30 Collector Current, IC -- A PC -- Tc IT13463 s 1s Collector Dissipation, PC -- W IC=10A 25 s 1m =5 PT Collector Current, IC -- A 00 μs 10 ms t era ion DC op 20 15 P T≤ 1s 10 5 0.01 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT15775 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT15774 No. A1800-3/4 2SC6144SG Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1800-4/4