FSS216

Ordering number:ENN5934A N-Channel Silicon MOSFET FSS216 DC/DC Converter Applications Features · Low ON-resistance. · 4V drive. Package Dimensions unit:mm 2116 [FSS216] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Conditions Ratings 30 ±24 10 Unit V V A A W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 52 2.0 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V ID=4A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 10 14 11 20 1200 700 280 15 28 Conditions Ratings min 30 10 ±10 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : S216 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71000TS (KOTO) TA-2143 No.5934-1/4 FSS216 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A IS=10A, VGS=0 Ratings min typ 15 200 150 150 38 5 8 0.8 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VIN VDD=15V ID=10A RL=1.5Ω D VOUT 10V 0V VIN PW=10µs D.C.≤1% G P.G 50Ω S FSS216 12 ID - VDS 4.0V 3.5 V 6.0V 8.0V 10V 18 16 ID - VGS VDS=10V 10 3.0V Drain Current, ID – A 14 12 10 8 6 4 Drain Current, ID – A 8 6 2 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2 0 0 0.5 1.0 1.5 2.0 2.5 25° 4 75°C Ta=-2 5°C 3.0 3.5 Drain-to-Source Voltage, VDS – V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Gate-to-Source Voltage, VGS – V 50 | yfs | - I D VDS=10V Static Drain-to-Source On-State Resistance, RDS (on) – mΩ R DS(on) - VGS ID=10A C Forward Transfer Admittance, | yfs | – S Ta=25°C 40 °C -25 Ta= °C 75 C 25° 30 ID=4A 20 10 0 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID – A Gate-to-Source Voltage, VGS – V No.5934-2/4 FSS216 50 45 R DS(on) - Ta 5 3 2 I F - VSD VGS=0 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 35 30 25 20 15 10 5 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Forward Current, IF – A 40 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I D=10 =10V A,VGS 0.01 Ambient Temperature, Ta – ˚C 10000 7 5 Diode Forward Voltage, VSD – V 10 9 Ciss,Coss,Crss - VDS f=1MHz Gate-to-Source Voltage, VGS – V VGS - Q g VDS=10V ID =10A 8 7 6 5 4 3 2 1 Ciss, Coss, Crss – pF 3 2 1000 7 5 3 2 Ciss Coss Crss 100 0 5 10 15 20 25 30 0 0 5 10 15 20 25 -25°C 30 25°C Ta= =4V A,VGS I D=4 75°C 35 40 Drain-to-Source Voltage, VDS – V 1000 7 Total Gate Charge, Qg – nC 100 7 5 3 2 SW Time - I D VDD =15V VGS=10V Drain Current, ID – A ASO I DP =52A 100µs 1m s Switching Time, SW Time – ns 5 3 2 td(off) tf 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 I D =10A DC 10 10 op er at ms 0m n s 100 7 5 3 2 Operation in this area is limited by RDS(on). io tr td(on) 2 3 5 7 1.0 2 3 5 7 10 2 3 10 7 0.1 0.01 0.01 Ta=25°C Single pulse Mounted on a ceramic board (1000mm2×0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 2 3 5 Drain Current, ID – A 2.4 Drain-to-Source Voltage, VDS – V P D - Ta Allowable Power Dissipation, PD – W 2.0 M ou nt 1.6 ed on ac er am 1.2 ic bo ar d( 10 0.8 00 m 0.4 m2 ×0 .8m m ) 120 140 160 0 0 20 40 60 80 100 Ambient Temperature, Ta – ˚C No.5934-3/4 FSS216 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.5934-4/4