2SA1305

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1305 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -30 -30 -5 -3 15 W V A UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1305 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage IC=-10mA , IB=0 IE=-50µA , IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-30V;IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-3V IC=-0.5A ; VCE=-5V -30 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.0 V Base-emitter saturation voltage -1.5 V Collector cut-off current -1.0 µA Emitter cut-off current -1.0 µA DC current gain 60 320 Transition frequency 100 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1305 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3