2SB555

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION ·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SB555 VCBO Collector-base voltage 2SB556 2SB555 VCEO Collector-emitter voltage 2SB556 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -5 -12 12 100 150 -65~150 V A A W Open emitter -120 -140 V CONDITIONS VALUE -140 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS 2SB555 2SB556 SYMBOL MIN TYP. MAX UNIT 2SB555 V(BR)CEO Collector-emitter breakdown voltage 2SB556 IC=-0.1A ;IB=0 -140 V -120 V(BR)EBO Emitter-base breakdown voltage IE=-10mA ;IC=0 IC=-7A; IB=-0.7A -5 V 2SB555 VCEsat Collector-emitter saturation voltage 2SB556 -3.0 IC=-6A; IB=-0.6A IC=-7A ; VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IE=0 ; VCB=-10V; f=1.0MHz IC=-2A ; VCE=-5V 40 -2.5 V VBE ICBO IEBO hFE COB fT Base-emitter on voltage V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 140 Output capacitance 330 pF Transition frequency 6 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB555 2SB556 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3