BU426A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU426 BU426A DESCRIPTION ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Intended for use in switching-mode color TV supply systems PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BU426 VCBO Collector-base voltage BU426A BU426 VCEO Collector-emitter voltage BU426A VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 400 10 6 8 3 113 150 -65~150 V A A A W Open emitter 900 375 V CONDITIONS VALUE 800 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU426 BU426A CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BU426 IC=100mA; IB=0 BU426A IC=2.5A; IB=0.5A IC=4A; IB=1.25A IC=2.5A; IB=0.5A IC=4A; IB=1.25A VCE=800V ;VBE=0 TC=125 VCE=900V ;VBE=0 TC=125 VEB=10V; IC=0 IC=0.6A ; VCE=5V 30 400 1.5 3.0 1.4 1.6 1.0 2.0 1.0 2.0 10 60 V V V V CONDITIONS MIN 375 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage BU426 ICES Collector cut-off current BU426A mA IEBO hFE Emitter cut-off current DC current gain mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=2.5A ; VCC=250V IB1=0.5A 0.5 3.5 0.5 µs µs µs IC=2.5A ; VCC=250V IB1=0.5A; IB2=-1A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.1 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU426 BU426A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3