2N5551

2N5551 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.55±0.2 NPN Silicon General Purpose Transistor TO-92 3 . 5 ±0 . 2 4.5±0.2 FEATURES * Switching and amplification in high voltage 14.3 ±0 . 2 01 0 .46 +0 .. 1 – 0 08 0 . 4 3 +0 .. 07 – * Low current(max. 600mA) * High voltage(max.180v) ( 1 . 27 Typ. ) 1.25–0.2 123 + 0.2 1: Emitter 2: Base 3: Collector MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Para Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature meter 180 160 6 0.6 2.54 ±0 . 1 Value Units V V V A W ℃ 0.625 -55-150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO hFE（1）* DC current gain hFE（2）* hFE（3） Collector-emitter saturation voltage VCEsat* Test conditions MIN 180 160 6 50 50 80 80 30 0.15 0.2 1 1 100 300 6 20 8 V 250 TYP MAX UNIT V V V Ic= 100 μA,IE=0 Ic= 1mA, IB=0 IE= 10μA, IC=0 VCB= 120V VEB= 4V, IC=0 VCE= 5 V, VCE= 5 V, VCE= 5 V, IC= 1 mA IC = 10 mA IC= 50 mA IE=0 nA nA IC= 10 mA, IB= 1 mA IC= 50 mA, IB= 5 mA IC= 10 mA, IB= 1 mA IC= 50 mA, IB= 5 mA VCE=10V,IC=10 mA,,f=100MHz VCB=10V,IE=0,f=1MHz VBE=0.5V,IC=0,f=1MHz VCE=5V,Ic=0.25mA, f=1KHZ,Rg=1kΩ Base-emitter saturation voltage Transition frequency Collector output capacitance Input capacitance Noise figure *Pulse test http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A VBEsat* V MHz pF pF dB fT Cob Cib NF Any changing of specification will not be informed individual Page 1 of 2 2N5551 Elektronische Bauelemente NPN Silicon General Purpose Transistor ELECTRICAL CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2