SSD45N03

SSD45N03 Elektronische Bauelemente 45A, 25V,RDS(ON)9mΩ N-Channel Enhancement Mode Power Mos.FET Description TO-252 The SSD45N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Featur es * RoHS Compliant * Low Gate Charge * Simple Drive Requirement * Fast Switching Speed D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 A b s o l u t e M a x i m um R a t i n g s Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VD S VG S ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 25 ± 20 45 32 150 50 0.4 Unit V V A A A W W/ C o Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range 2 EAS IAR Tj, Tstg 150 25 -55~+150 mJ A o C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 2.5 110 Unit o o C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSD45N03 Elektronische Bauelemente 45A, 25V,RDS(ON)9mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 3 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 25 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±20V VDS=25V,VGS=0 VDS=20V,VGS=0 VGS=10V, ID=30 A VGS=4.5V, ID=30A o 0.026 _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 1 25 9 13 _ _ _ RD S ( O N ) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs 6 10 15 4 6 8.8 57.5 18.5 6.4 1135 200 135 25 _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=20 A VDS=20V VGS= 4.5V _ _ _ _ VDD=15V ID=20A nS VGS=10V RG=3.3Ω RD=0.75Ω _ _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=10A Source-Drain Diode Parameter Forward On Voltage 3 Continuous Source Current(Body Diode) Symbol VSD IS Min. _ _ Typ. _ _ Max. 1.5 Unit V A Test Condition IS=20 A, VGS=0V VD=VG=0V,VS=1.5 V 50 Notes: 1.Pulse width limited by safe operating area. 2. Staring Tj=25oC,VDD=25V,L=0.1mH,RG=25 Ω ,IAS=10A 3. Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSD45N03 Elektronische Bauelemente 45A, 25V,RDS(ON)9mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics 13 Fig 2. Typical Output Characteristics 12 2 11 10 9 8 7 6 5 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SSD45N03 Elektronische Bauelemente 45A, 25V,RDS(ON)9mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4