SSG4942N

SSG4942N Elektronische Bauelemente Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M A C N J K FEATURES  H G F E    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION S D D D D Package SOP-8 MPQ 2.5K LeaderSize 13’ inch G S G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD @ TJ, TSTG TA = 25°C TA = 70°C Ratings 40 ±20 4.4 3.6 ±50 2.3 2.1 1.3 -55 ~ 150 Unit V V A A A A W W °C Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 Notes: 1. 2. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t ≦ 10 sec Steady State RθJA 62.5 110 °C / W °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 1 of 2 SSG4942N Elektronische Bauelemente Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Symbol VBR(DSS) VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 30 1 20 - Typ. Static 40 0.7 Max. ±100 1 25 80 100 - Unit Teat Conditions VGS= 0V, ID= 250μA VDS= VGS, ID= 250μA VDS= 0V, VGS= 20V VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 4.4A VGS= 4.5V, ID= 3.9A VDS= 15V, ID= 4.4A IS= 2.3A, VGS= 0V V nA μA μA A mΩ S V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 20 7.0 7.0 nC ID= 4.4A VDS= 15V VGS= 5V Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 1. 2. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Td(on) Tr Td(off) Tf - 20 9 70 20 nS VDD= 25V ID= 1A VGEN= 10V RL= 25Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 2 of 2