2N4915

SILICON EPITAXIAL NPN TRANSISTOR 2N4915 • • • Low Collector Saturation Voltage. Hermetic TO3 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 80V 80V 5V 5A 1.0A 87.5W 0.5W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 2 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8302 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON EPITAXIAL NPN TRANSISTOR 2N4915 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO ICEV ICEO ICBO IEBO hFE (1) (1) Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Forward-current transfer ratio Test Conditions IC = 10mA VCE = 80V VBE = -1.5V TC = 150°C VCE = 80V VCB = 80V VEB = 5V IC = 2.5A IC = 5A IC = 2.5A IC = 2.5A IC = 5A IB = 0 IE = 0 IC = 0 VCE = 2V VCE = 2V VCE = 2V IB = 0.25A IB = 1.0A Min. 80 Typ Max. Units V 1.0 2 1.0 1.0 1.0 25 7 1.4 1.0 1.5 V 100 mA VBE(on) (1) Base-Emitter Voltage Collector-Emitter Saturation Voltage VCE(sat) (1) DYNAMIC CHARACTERISTICS hfe Small-Signal Current Gain IC = 500mA f = 1.0KHz Transition Frequency IC = 1.0A f = 1.0MHz VCE = 10V 4 MHz VCE = 10V 20 fT Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8302 Issue 1 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N4915 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8302 Issue 1 Page 3 of 3 22.23 (0.875) max.