HFH19N60

HFH19N60 OCT 2009 BVDSS = 600 V HFH19N60 600V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 95 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.3 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.3 Ω ID = 18.5 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 18.5 11.7 74 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 1150 18.5 30 4.5 300 2.38 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.24 -Max. 0.42 -40 ℃/W Units ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 9.3 A 2.5 --0.3 4.5 0.38 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.65 ------10 100 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---3700 360 45 4800 470 59 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 300 V, ID = 18.5 A, RG = 25 Ω -------- 65 210 150 135 95 18 37 140 430 310 280 125 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 480V, ID = 18.5 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 18.5A, VGS = 0 V IS = 18.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------420 4.7 18.5 74 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=6.2mH, IAS=18.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤18.5A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Typical Characteristics ID, Drain Current [A] VDS, Drain-Source Voltage [V] ID, Drain Current [A] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 8000 7000 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 120V VGS, Gate-Source Voltage [V] 10 VDS = 300V VDS = 480V Capacitances [pF] 5000 4000 3000 2000 1000 0 10-1 Ciss 8 6 Coss ∗ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 Crss 2 * Note : ID = 18.5A 100 101 0 0 20 40 60 80 100 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Typical Characteristics (continued) 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.5 1.0 * Note: 1. VGS=10V 2. ID=9.3A 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature[oC] Figure 7. Breakdown Voltage Variation vs Temperature 20 Figure 8. On-Resistance Variation vs Temperature 16 ID, Drain Current [A] ID, Drain Current [A] 12 8 4 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZθJC(t), Thermal Response D=0.5 10 -1 0.2 0.1 0.05 * Notes : 1. ZθJC(t) = 0.42 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 10-2 0.02 0.01 single pulse PDM t1 t2 100 101 10-5 10-4 10-3 10-2 10-1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Package Dimension TO-3P 15.6±0.20 13.6±0.20 9.6±0.20 4.8±0.20 .2 φ3 ±0 .20 1.5±0.20 13.9±0.20 14.9±0.20 19.9±0.20 18.7±0.20 1.4±0.20 3±0.20 2±0.20 1±0.20 3.5±0.20 16.5±0.20 5.45typ 5.45typ 0.6±0.20 ◎ SEMIHOW REV.A0,OCT 2009