SPM6G120-120D

SENSITRON SEMICONDUCTOR TECHNICAL DATA SPM6G120-120D Data Sheet 4100 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate Voltage Collector Current (For the module) VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 80A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance IGBT Internal Soft Shutdown Turn Off Gate Resistance Short Circuit Time, Conditions TBD DC Bus Voltage Rate of Rise With 15V Supply Removed, dv/dt Junction To Case Thermal Resistance RθJC TC = 25 OC TC = 125 C O BVCES TC = 25 OC TC = 80 C ICM ICES O 1200 - - 120 80 180 V A A IC 2 15 VCE(SAT) 1.9 2.2 30 10 100 10 20 0.27 2.3 mA mA V Ohm Ohm Ohm usec V/usec o C/W MODULE TOTAL WEIGHT Estimated Total Weight 13 OZ • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 1 SPM6G120-120D SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. Brake IGBT SPECIFICATIONS Continuous Collector Current (Limited by Terminals) Pulsed Collector Current, 0.5mS IGBT Internal Gate Resistance IGBT Internal Gate Shunt Resistance Junction To Case Thermal Resistance RθJC TC = 25 OC TC = 90 C ICM 10 10 0.35 o O IC - - 50 30 100 A A Ohm K Ohm C/W ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Surge Current, tp = 10 msec Diode Forward Voltage, IF = 80A O PIV IF IFSM VF trr RθJC 1200 - 1.8 250 - 80 200 2.3 300 0.45 V A A V nsec o Diode Reverse Recovery Time (IF=80A, VRR=600V , di/dt < 1000 A/µs) Maximum Thermal Resistance C/W MODULE STORAGE AND OPERATING CONDITIONS Maximum operating Junction Temperature Maximum Storage Temperature Operating Altitude Tjmax Tjmax -40 -55 150 150 50000 o o C C Ft Vibration and shock requirements (1) • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 2 SPM6G120-120D SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - Gate Driver Supply Voltage, limits apply to Vcc, Vcc1, Vcc2, Vcc3 Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout, limits apply to Vcc, Vcc1, Vcc2, Vcc3 Internal Bootstrap Capacitor Value Desaturation Detection, High Input Threshold Voltage Desaturation Detection, Low Input Threshold Voltage Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time at VCC=300V, IC=70A, TC = 25 Dead Time Requirement, for Shoot Through Prevention Opto-Isolator Input-to-Output Isolation Voltage, momentary Opto-Isolator Operating Input Common Mode Voltage Opto-Isolator Operating Input Common Mode Transient Immunity, with Iin > 5mA Pin-To-Case Isolation Voltage, DC Voltage (Device will be tested at 3000V for 10 seconds) 2500 toffd tf 500 750 2500 1000 10 tond tr Vcc HIN, LIN Ith BVin VF VCCUV 12 2 5.0 9.5 10 7.0 6.0 1200 100 nsec V V KV/usec V 15 5.0 1.6 1.5 10.0 8.0 7.0 18 8.0 2.0 1.7 11.5 9.0 8.0 800 100 V mA mA V V V uF V V nsec DC Bus Current Sensor (Bi-directional With Absolute Value Output) Shunt Resistor Value Current Amplifier Gain, Referenced to Gnd1 Current Amplifier DC Offset (Zero DC Bus Current) Over-Current Set Point 2.33 0.50 0.025 0 2.43 2.53 mOhm V/A V V • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 3 SPM6G120-120D SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - +5V output, Isolated power supply Referenced to Gnd1 Maximum load current 4.75 5 5.25 30 V mA +5V Input, Isolated power supply Referenced to Gnd2 (2) VDD 4.75 5 5.25 V Base Plate Temperature (2) Base Plate Temperature Sensor Output Gain Referenced to Gnd2 Temperature Sensor Output DC Offset Referenced to Gnd2 Accuracy, at temperature range from - 40 oC to 125 oC Tco 6.25 424 +/-4.0 mV/oC mV o C Phase A, Phase B, and Phase C Current Sensors (Bi-directional Output) (2) Current Amplifier Gain Referenced to Gnd2 Current Amplifier DC Offset (Zero Phase Current) Referenced to Gnd2 Current Amplifier Outputs Isolation To Phase Lines, and to Gnd1 1500V V +/0.015 2.5 V/A V (1) Unit is designed to meet ....Vibration and Shock requirements, Mil-STD-810F shall be used. (514.5 and 516.5 methods respectively). (2) Phase current sensors and base plate temperature sensor are floating sensors referenced to Gnd2. An isolated 5V power supply shall be used to power these sensors. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 4 SPM6G120-120D SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. Pinout Pin # 1 2 3 4 Function Isolated Input for Low-side IGBT of Phase A Return for Input at 1 Isolated Input for High-side IGBT of Phase A Return for Input at 3 Pin # 23 24 25 26 Function TCo Case Temperature Output with a gain of 6.25 mV/oC +5V Input Rtn (Signal Ground, Gnd2) +5V Input ICd DC offset of 2.5V for Differential Output Reading of Output at Pin 27 5 6 Isolated Input for Low -side IGBT of Phase B Return for Input at 5 27 28 ICo, Phase C Current Sensor output IBd DC offset of 2.5V for Differential Output Reading of Output at Pin 29 7 8 9 Isolated Input for High-side IGBT of Phase B Return for Input at 7 Isolated Input for Low-side IGBT of Phase C 29 30,31 32 IBo, Phase B Current Sensor output Brake Terminal. Brake Resistor Shall be Connected Between These Terminals and +VDC Brake IGBT Gate Input Brake IGBT Emitter input is internally connected to DC Bus return 10 11 12 13 14 15 16 17 18 19 20 21 Return for Input at 9 Isolated Input for High-side IGBT of Phase C Return for Input at 11 Flt (3) (3) 33 to 37 38 to 42 43 to 46 47 to 50 51 to 54 55 (4) DC Bus return DC Bus “+VDC” input Phase C output Phase B output Phase A output Rtn For Pin56 Optional 15V for Phase C High Side Gate Driver Rtn For Pin58 Optional 15V for Phase B High Side Gate Driver Rtn For Pin60 Optional 15V for Phase A High Side Gate Driver SD Itrip-Ref Adjustable Reference for over-Current Shutdown Idco Flt Clear Input +5V Output +15V Rtn (Signal Ground, Gnd1) +15V Input IAd DC offset of 2.5V for Differential Output Reading of Output at Pin 22 (3) 56 (4) 57 58 59 60 (4) (4) (4) (4) 22 IAo, Phase A Current Sensor output Case Isolated (3) See Pin Description. (4) Contact Factory for this option to be removed, part number SPM6G120-120D-A. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 5 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. Package Drawing SPM6G120-120D Figure 2. Mechanical Outlines • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 7 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - SPM6G120-120D Device Marking Figure 3. Device Pinout and Marking • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 8 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. – SPM6G120-120D Normalized Thermal Impedance Curves for Both IGBTs and Diodes D = 0.50 D = 0.20 D = 0.10 D = 0.05 SINGLE PULSE (THERMAL RESPONSE) Figure 4. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT) D = 0.50 D = 0.20 D = 0.10 D = 0.05 SINGLE PULSE (THERMAL RESPONSE) Figure 5. Normalized Transient Thermal Impedance, Junction-to-Case (Diode) • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 9 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. – SPM6G120-120D Pin Descriptions LinA ( Pin 1 ), is an isolated drive input for Low-side IGBT of Phase A. LinA-R ( Pin 2 ), Return for Input at Pin1. HinA ( Pin 3 ), is an isolated drive input for High-side IGBT of Phase A. HinA-R ( Pin 4 ), Return for Input at Pin3. LinB- ( Pin 5 ), is an isolated drive input for Low-side IGBT of Phase B. LinB-R ( Pin 6 ), Return for Input at Pin5. HinB ( Pin 7 ), is an isolated drive input for High-side IGBT of Phase B. HinB-R ( Pin 8 ), Return for Input at Pin7. LinC ( Pin 9 ), is an isolated drive input for Low-side IGBT of Phase C. LinC-R ( Pin 10 ), Return for Input at Pin9. HinC ( Pin 11 ), is an isolated drive input for High-side IGBT of Phase C. HinC-R ( Pin 12 ), Return for Input at Pin11. Recommended input turn-on current for all six drive signals is 5-8mA. For higher noise immunity the tri-state differential buffer, DS34C87, is recommended as shown in Fig. 6. Note : Connect LinA to non-inverting output for a non-inverting input logic. Connect LinA to inverting output for an inverting input logic. 300-400Ω One Channel of DS34C87 2-5KΩ LinA-R LinA OptoCoupler Input Fig. 6. Input Signal Buffer • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 10 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - SPM6G120-120D Flt ( Pin 13 ), is a dual function input/output pin. It is an active low input. It is internally pulled high to +5V by 2.74K Ω. If pulled down, it will freeze the status of all the six IGBTs regardless of the Hin and Lin signals. As an output, Pin 13, reports desaturation protection activation. When desaturation protection is activated a low output for about 9 µsec is reported. If any other protection feature is activated, it will not be reported by Pin 13. SD ( Pin 14 ), is a dual function input/output pin. It is an active low input. It is internally pulled high to +5V by 2.74K Ω. As a low input it shuts down all IGBTs regardless of the Hin and Lin signals. SD is internally activated due to desaturation protection, or over-current shutdown. Desaturation shutdown is a latching feature. SD can be used to shutdown all IGBTs except the brake IGBT by an external command. An open collector switch shall be used to pull down SD externally. Also, SD can be used as a fault condition output. Low output at SD indicates a latching fault situation. Itrip-Ref ( Pin 15 ), is an adjustable voltage divider reference for over-current shutdown. Internal pull-up to +5V by 20KΩ, pull down to ground is 8.87KΩ, and hysteresis resistance of 15KΩ. The internal set point is 2.43V, corresponding to over-current shutdown of 97A. The re-start delay time is about 70 usec. Idco ( Pin 16 ), is an absolute value current sense output of DC bus current. The sensor gain is 0.025V/A. The internal impedance of this output is 1KΩ, and internal filter capacitance is 1nF. The frequency response bandwidth of this signal is about 200KHz. Flt-Clr( Pin 17 ), is a fault clear input. It can be used to reset a latching fault condition, due to desaturation protection. Pin 17 an active high input. It is internally pulled down by 2.0KΩ. A latching fault due to desaturation can be cleared by pulling this input high to +5V by 200-500Ω, or to +15V by 3-5KΩ, as shown in Fig. 9. It is recommended to activate fault clear input for more than 300 µsec at startup. +5V Output ( Pin 18 ), is a +5V output. Maximum output current is 30mA. +15V Rtn ( Pin 19 ), is signal ground, Gnd1. This pin is internally connected to DC Bus return. No external connection shall be established between Signal Gnd1 and +VDC Rtn. Gnd1 is isolated from Gnd2. Note that Pins 13 to 18 are referenced to Gnd1. Vcc ( Pin 20 ), is the +15V input biasing supply connection for the controller. Under-voltage lockout keeps all outputs off for Vcc below 10.5V. Vcc pin should be connected to an isolated 15V power supply. Vcc recommended limits are 14V to 16V , and shall not exceed 18V. The return of Vcc is pin 19. Recommended power supply capability is about 70mA. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 11 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. IAd ( Pin 21 ), is a +2.5V DC offset used for differential output reading of IAo. SPM6G120-120D IAo ( Pin 22 ), is phase A hall current sensor output. The output can be measured between Pin22 and Pin 21 differentially. Zero current corresponds to zero output, current entering Phase A pins will produce positive output voltage at Pin22, and current out of Phase A pins will produce negative output voltage at Pin22. Also, the output can be measured as single ended between Pin22 and Pin24. In this case zero current will correspond to 2.5V output, current entering Phase A pins will produce positive output voltage above 2.5V, and current out of Phase A pins will produce positive output voltage below 2.5V. The sensitivity of this sensor is 0.015V/A. TCo ( Pin 23 ), is an analog output of case temperature sensor. The sensor output gain is 6.25mV/oC, with 424 mV DC offset. This sensor can measure both positive and negative oC. The internal impedance of this output is 2.74KΩ. The internal block diagram of the temperature sensor is shown in Fig. 7. 2.74KΩ Pin 23 Vo= (+6.25mV/oC )*ToC + 424 mV 10nF Pin 24 Gnd2 Fig. 7 Temperature Sensor Internal Block Diagram The output voltage reading vs temperature will be: TCo = + 0.58V at Tc= +25oC TCo = + 1.205V at Tc= +125oC TCo = + 0.174V at Tc= -40oC +5V-in Rtn ( Pin 24 ), is signal ground, Gnd2. This pin is internally floating for flexibility. The phase current sensors and temperature sensor are referenced to Gnd2. Gnd2 isolation from Gnd1 is over 1500V. VDD, +5V-in ( Pin 25 ), is the +5V input biasing supply connection for the phase current sensors and temperature sensor. Pin 25 should be connected to an isolated 5V power supply, recommended limits are 4.75V to 5.25V. The return of this input is pin 24. Recommended power supply capability for VDD is about 50mA. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 12 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. ICd ( Pin 26 ), is a +2.5V DC offset used for differential output reading of ICo. SPM6G120-120D ICo ( Pin 27 ), is hall current sensor output for phase C. The output can be measured between Pin27 and Pin 26 differentially. Zero current corresponds to zero output, current entering Phase C pins will produce positive output voltage at Pin27, and current out of Phase C pins will produce negative output voltage at Pin27. Also, the output can be measured as single ended between Pin27 and Pin24. In this case zero current will correspond to 2.5V output, current entering Phase C pins will produce positive output voltage above 2.5V, and current out of Phase C pins will produce positive output voltage below 2.5V. The sensitivity of this sensor is 0.015V/A. IBd ( Pin 28 ), is a +2.5V DC offset used for differential output reading of IBo. IBo ( Pin 29 ), is hall current sensor output for phase B. The output can be measured between Pin29 and Pin 28 differentially. Zero current corresponds to zero output, current entering Phase B pins will produce positive output voltage at Pin29, and current out of Phase B pins will produce negative output voltage at Pin29. Also, the output can be measured as single ended between Pin29 and Pin24. In this case zero current will correspond to 2.5V output, current entering Phase B pins will produce positive output voltage above 2.5V, and current out of Phase B pins will produce positive output voltage below 2.5V. The sensitivity of this sensor is 0.015V/A. Brk ( Pins 30,31 ), is Brake Terminal. Brake Resistor shall be connected between these terminals and +VDC. If the brake resistor is inductive, a freewheeling diode shall be connected across this resistor. Gbrk ( Pin 32 ), is Brake IGBT Gate Input. Brake IGBT Emitter is internally connected to DC Bus return. +VDC Rtn ( Pins 33 to 37 ), is DC Bus return. +VDC (Pins 38 to 42 ), is +DC Bus input. PhC (Pins 43 to 46 ), is Phase C output. PhB (Pins 47 to 50 ), is Phase B output. PhA (Pins 51 to 54 ), is Phase A output. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 13 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - SPM6G120-120D Pins 55 to 60 are optional. In addition to the internal bootstrap circuits, of Pins 55-60 can be used to supplement additional, 15V power supplies for the high side gate drivers of phases A,B,C. The internal bootstrap circuits will stay and be supplemented by the additional power supplies. Contact factory if these pins are not needed. The part number will be SPM6G120-120-A for an option without Pins 55-60. Vcc1, Vcc2, Vcc3 recommended limits are 14V to 16V , and shall not exceed 18V. Fig. 8 shows the connection for Vcc3. A diode Da shall be used to prevent current flow from Vcc to Vcc3 incase of voltage variations between the two supplies. Da also acts as an oring diode and provides blocking incase of Vcc3 failure. Ra soften the initial charging rate of the gate driver power supply. Recommended power supply capability for Vcc1, Vcc2, Vcc3 is about 15mA. Vcc1-Rtn (Pin 55 ), is Phase C high-side gate driver 15V power supply return. Vcc1 (Pin 56 ), is Phase C high-side gate driver 15V power supply. This should be an isolated power supply. This is an option to replace the internal Bootstrap circuit. Vcc2-Rtn (Pin 57 ), is Phase B high-side gate driver 15V power supply return. Vcc2 (Pin 58 ), is Phase B high-side gate driver 15V power supply. This should be an isolated power supply. This is an option to replace the internal Bootstrap circuit. Vcc3-Rtn (Pin 59 ), is Phase A high-side gate driver 15V power supply return. Vcc3 (Pin 60 ), is Phase A high-side gate driver 15V power supply. This should be an isolated power supply. This is an option to replace the internal Bootstrap circuit. Pin60 Vcc3 Ra = 10-20 Ω +15V 5-10uF Da Rtn Vcc +15V D1 D2 Pin59 +VDC Q1H Isolated 15V supply VBS Gate Driver • +15V Rtn Sgnl Gnd1 D3 Q1L PhA +VDC Rtn Figure 8. Floating 15V Power Supply Connection for High-Side Gate Drive Of PhA • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 14 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - SPM6G120-120D Application Notes a- System Start Up Sequence: Activate fault clear input for about 300 µsec at startup. The micro-controller enable output is inverted and fed to the second DS34C87 control input. When the controller is in disable mode, the Flt-clr is enabled and Phase C low-side IGBT is turned on. This allows for the bootstrap circuit of the highside IGBT of Phase C to be charged. At the same time, the high-side bootstrap circuits of Phases A and B will charge through the motor winding. Once the controller is enabled, PWM signals of all channels should start. Fig. 9 shows a recommended startup circuit. Notes: 1- Gnd1 and Gnd2 are isolated grounds from each other. 2- The +5V power supply used for DS34C87 is an isolated power supply. 3- The +15V power supply used for SPM6G120-120D is an isolated power supply. DS34C87 HinA LinA HinB LinB Enable OutA-P OutA-N InB OutB-P OutB-N InC OutC-P OutC-N InD OutD-P A/B Cont OutD-N +5V C/D Cont Gnd DS34C87 InA OutA-P OutA-N OutB-P InB OutB-N InC OutC-P OutC-N InD OutD-P A/B Cont OutD-N +5V C/D Cont Gnd InA 350Ω 350Ω 350Ω 350Ω +5V-in Gnd2 2.74k 350Ω 350Ω 350Ω 350Ω 2.74KΩ 15V Flt-Clr 2.74k 2.74k 2.74k 2.74k 2.74k Micro Controller HinC LinC HinA HinA-R LinA LinA-R HinB HinB-R LinB LinB-R HinC HinC-R LinC LinC-R SPM6G120-120D 2.74KΩ SFH6186-4 Gnd1 Fig. 9 Input Interface and Startup Circuit Truth Table For DS34C87 Input H L X Control Input H H L Non-Inverting Output H L Z Inverting Output L H Z • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 15 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - SPM6G120-120D b- DC Bus Charging from 15V D1 Vcc +15V R1 100KΩ D2 DSH Q1H VBS D3 +VDC R2 100KΩ 700 KΩ DSL 700 KΩ • PhA Q1L +15V Rtn Sgnl Gnd1 Gate Driver +VDC Rtn Figure 10. • • • • Charging Path from 15V Supply to DC Bus when DC Bus is off • Each IGBT is protected against desaturation. D2 is the desaturation sense diode for the high-side IGBT D3 is the desaturation sense diode for the low-side IGBT When the DC bus voltage is not applied or below 15V, there is a charging path from the 15V supply to the DC bus through D2 and D3 and the corresponding pull up 100K Ohm resistor. The charging current is 0.15mA per IGBT. Total charging current is about 1.5mA. Do not apply PWM signal if the DC bus voltage is below 20V. c- Active Bias For Desaturation Detection Circuit: The desaturation detection is done by diode D2 for the high side IGBT Q1H, and by diode D3 for the low side IGBT Q1L. The internal detection circuit, input DSH for the high-side and input DSL for the low-side, is biased by the local supply voltage VCC for the low side and VBS for the high side. When the IGBT is on the corresponding detection diode is on. The current flowing through the diode is determined by the internal pull resistor, R1 for the high side and R2 for the low side. To minimize the current drain from VCC and VBS, R1 and R2 are set to be 100KΩ. Lower value of R1 will overload the bootstrap circuit and reduce the bootstrap capacitor holding time. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 16 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - SPM6G120-120D To increase the circuit noise immunity, an active bias circuit is used to lower R1 and R2 when the corresponding IGBT is off by monitoring the input voltage at both DSH, DSL inputs. If the inputs at DSH drops below 7V the active bias is disabled. The active bias circuits result in reducing R1 or R2 to about 110 Ω when the corresponding input is above 8V, as shown in Fig. 11. This active circuit results in higher noise immunity. R1 R1 100KΩ R1 110Ω VDSH 7V 8V Figure 11. Active Bias for DSH and DSL Internal Inputs d- Limitation With Trapezoidal Motor Drive In trapezoidal motor drives, two phases are conducting while the third phase is off at any time. In Fig. 12 shows the voltage waveform across one phase, during intervals t1 and t2, the IGBT is off while the active bias circuit is above 8V, and below 15V. This results in activating the active pull up circuit and reducing the corresponding R1 or R2 down to about 110 Ω. A high current will flow from VCC or VBS through R2 or R1 and the motor winding during intervals t1, and t2. This results in draining the bootstrap capacitor voltage quickly. • Contact the factory for adjustments to satisfy trapezoidal motor drive applications using this module. The adjustment will disable the internal pull up circuit. V 15 8 time t1 t2 Figure 12. Active Bias for DSH and DSL Internal Inputs • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 17 SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. - SPM6G120-120D DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 18