SHINDENGEN
VR Series Power MOSFET
N-Channel Enhancement type
2SK1861
( F04E15L )
150V 4A
OUTLINE DIMENSIONS
Case : E-pack (Unit : mm)
RATINGS
Absolute Maximum Ratings (Tc = 25) Item Symbol Tstg Storage Temperature Channel Temperature Tch VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentiDCj ID IDP Continuous Drain CurrentiPeak) IS Continuous Source CurrentiDCj PT Total Power Dissipation Conditions Ratings -55 to 150 150 150 ±20 4 12 4 10 Unit V A W
Copyright & Copy;2003 Shindengen Electric Mfg.Co.,Ltd.
VR Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tran]conductance RDS(ON) Static Drain-Source On-]tate Resistance
Gate Threshold Voltage Source-Drain Diode Forward Voltage Thermal Resistance Total Gate Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Turn-Off Time
2SK1861 ( F04E15L )
Conditions
ID = 1mA, VGS = 0V VDS = 150V, VGS = 0V VGS = ±20V, VDS = 0V ID = 2A, VDS = 10V ID = 2A, VGS = 4V ID = 2A, VGS = 10V ID = 1mA, VDS = 10V IS = 4A, VGS = 0V junction to case VGS = 10V, ID = 4A, VDD = 100V VDS = 10V, VGS = 0V, f = 1MHZ ID = 2A, RL = 50¶, VGS = 5V
Min. 150 1.8 1.0
Typ. Max. 250 ±10 0.6 0.5 2.0 1.5 12.5
Unit V ÊA S ¶ V /L nC pF
VTH VSD Æjc Qg Ciss Crss Coss ton toff
3.6 0.42 0.35 1.5 21 480 50 160 60 120
120 240
ns
Copyright & Copy;2003 Shindengen Electric Mfg.Co.,Ltd.
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