2SK2189

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2189 (F10W50VX2) 500V 10A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: MTO-3P Case E-pack (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. APPLICATION ●Switching power supply of AC 100V input ●High voltage power supply ●Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage Gate-Source Voltage VGSS ID Continuous Drain Current（DC） IDP Continuous Drain Current（Peak) IS Continuous Source Current（DC） Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25℃ TOR （ Recommended torque : 0.5N･m ） Mounting Torque Ratings -55～150 150 500 ±30 10 30 10 70 10 0.8 Unit ℃ V A W A N・ m Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage θjc Theｒmal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2189 ( F10W50VX2 ) Min. 500 Typ. Max. 250 ±0.1 2.4 2.5 6.3 0.8 3.0 Unit V μA ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, VGS = 10V, RL = 30Ω 30 890 70 200 70 140 S 1.0 Ω 3.5 V 1.5 1.78 ℃/Ｗ nC pF 110 220 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2189 20 Tc = − 55 °C Transfer Characteristics 25 °C 15 Drain Current ID [A] 100 °C 150 °C 10 5 VDS = 25V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2189 10 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] ID = 5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [°C] 2SK2189 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [°C] 2SK2189 100 Safe Operating Area 10 100 µs 200 µs 1 R DS(ON) limit Drain Current ID [A] 1ms 10ms DC 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2189 Transient Thermal Impedance 10 1 Transient Thermal Impedance θjc(t) [°C/W] 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Time t [s] 2SK2189 10000 Capacitance Capacitance Ciss Coss Crss [pF] 1000 Ciss Coss 100 Crss f=1MHz Tc=25 °C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2189 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [°C] 2SK2189 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VGS VDD = 400V 300 200V 100V 15 10 200 5 100 ID = 10A TYP 0 0 10 20 30 40 0 50 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400