2SK2667

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2667 ( F3W90HVX2 ) 900V 3A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION ●Switching power supply of AC 240V input ●High voltage power supply ●Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current（DC） IDP Continuous Drain Current（Peak) IS Continuous Source Current（DC） PT Total Power Dissipation IAR Repetitive Avalanche Current EAS Single Avalanche Energy EAR Repetitive Avalanche Energy TOR Mounting Torque Conditions Ratings -55～150 150 900 ±30 3 6 3 65 3 48 4.8 0.8 Unit ℃ V Pulse width≦10μs, Duty cycle≦1/100 A W A mJ N･m Tch = 150℃ Tch = 25℃ Tch = 25℃ （ Recommended torque ：0.5 N･m ） Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd HVX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK2667 ( F3W90HVX2 ) Min. 900 Typ. Max. 250 ±0.1 1.5 2.5 2.5 3.5 3.0 Unit V μA S Ω V ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V ID = 1.5A, VDS = 10V ID = 1.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 3A VDS = 25V, VGS = 0V, f = 1MHZ ID = 1.5A, RL = 100Ω, VGS = 10V 30 630 16 67 40 140 4.7 3.5 1.5 1.92 ℃/Ｗ nC pF 70 230 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2667 6 Tc = − 55 °C 5 Transfer Characteristics 25 °C Drain Current ID [A] 4 100 °C 3 150 °C 2 1 VDS = 25V TYP 0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2667 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 10 ID = 1.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [°C] 2SK2667 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [°C] 2SK2667 10 Safe Operating Area 100 µs 200 µs 1 Drain Current ID [A] 1ms R DS(ON) limit 10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2667 Transient Thermal Impedance 10 1 Transient Thermal Impedance θjc(t) [°C/W] 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Time t [s] 2SK2667 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [°C] 2SK2667 10000 Capacitance 1000 Ciss Capacitance Ciss Coss Crss [pF] 100 Coss Crss 10 f=1MHz Ta=25 °C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2667 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V → 0V Rg = 70 Ω 10 IAS = 3A EAR = 4.8mJ EAS = 48mJ Single Avalanche Current IAS [A] 1 0.1 0.1 1 10 100 Inductance L [mH] 2SK2667 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [°C] 2SK2667 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VGS VDD = 400V 200V 100V 200 15 300 10 5 100 ID = 3A TYP 0 0 10 20 30 40 0 50 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400