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SLCD-61N3

SLCD-61N3

  • 厂商:

    SILONEX

  • 封装:

  • 描述:

    SLCD-61N3 - Solderable Planar Photodiode - Silonex Inc.

  • 数据手册
  • 价格&库存
SLCD-61N3 数据手册
SLCD-61N3 Solderable Planar Photodiode Features • Visible and IR spectral response • High reliability • Oxide passivation • Linear short circuit current • Low capacitance, high speed Description The Silonex series of silicon solderable planar photodiodes feature low cost, high reliability, and linear short circuit current over a wide range of illumination. These devices are widely used for light sensing and power generation because of their stability and high efficiency. They are particularly suited to power conversion applications due to their low internal impedance, relatively high shunt impedance, and stability. These devices also provide a reliable and inexpensive detector for instrumentation and light beam sensing applications. Cathode 0.4 10.16 Anode 5.08 Sensitive Area (45.9 sq.mm.) Dimensions in mm. (+/- 0.13) Also available with leads as part number SLSD-71N3 Directional Sensitivity Characteristics 40° 50° 30° 20° 10° 1.0 0.8 0.6 0.4 0.2 0.0 Half Angle = 60° 60° 70° Absolute Maximum Ratings Storage Temperature Operating Temperature 80° -40°C to +125°C -40°C to +125°C 90° 100° 1.0 0.8 0.6 0.4 20° 40° 60° 80° 100° 120° Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Min Typ Max ISC Short Circuit Current 1.3 2.1 VOC Open Circuit Voltage 0.40 ID Reverse Dark Current 1.7 CJ Junction Capacitance 1.0 Spectral Sensitivity 0.55 Sλ VBR Reverse Breakdown Voltage 20 Maximum Sensitivity Wavelength 930 λP Sensitivity Spectral Range 400 1100 λR Acceptance Half Angle 60 θ1/2 Specifications subject to change without notice Notes: (1) Ee = light source @ 2854 °K Units mA V µA nF A/W V nm nm deg Test Conditions 2 VR=0V, Ee=25mW/cm (1) 2 Ee=25mw/cm (1) VR=5V, Ee=0 VR=0V, Ee=0, f=1MHz λ=940nm IR=100µA (off center-line) 104112 REV 0
SLCD-61N3 价格&库存

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