CXA2555Q

CXA2555Q RF Amplifier for CD Player/CD-ROM For the availability of this product, please contact the sales office. Description The CXA2555Q is an IC for RF signal processing of CD player and CD-ROM. Features • Wide-band RF AC amplifier (RF AC signal fc ≥ 20MHz) • 4-mode RF equalizer (active filter type) • RF equalizer boost amount and cut-off frequency adjustable • EFM time constant adjustable (switching function provided) • Peak hold time constant of mirror circuit adjustable • Tracking error amplifier cut-off frequency adjustable • Tracking error amplifier voltage gain adjustable • Center error amplifier • APC (Automatic Power Control) function • APC ON/OFF control • Supports laser coupler Absolute Maximum Ratings • Supply voltage VCC • Storage temperature Tstg • Power consumption PD 32 pin QFP (Plastic) Applications • CD players • CD-ROM drives Functions • RF summing amplifier • RF equalizer • Focus error amplifier • Tracking error amplifier • Center error amplifier • Mirror detection function • APC circuit 7 –65 to +150 800 V °C mW Operating Conditions • Supply voltage VCC – GND 3.0 to 5.5 V • Operating temperature Topr –20 to +75 °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96730B76 CXA2555Q Block Diagram SUM OUT 32 31 RFI RF C 30 29 28 27 26 25 VCA BOOST FILTER CONTROL CONTROL CONTROL LD 1 LPF DELAY MIXER PD 2 HPF VS 44k 39k PD1 3 18k VC PD2 4 10p 44p HOLD PEAK /BOT 80k 22 RFO 1 80k 80k 1.3V 22k 51k 1.0V 56k 10k 1.25V E 5 1k VC 56k VC F 6 20k VCA 20k GND 7 10k GND TE1 8 23k VC 9 10 11 12 VC 20k 20k VCA 73.34k 320k 2p 13 14 15 16 164k 27p 17 MIRR T VC 16k 16k 174k 10k 87k 27p 18 CP 40k 20k VC 10k 55k 10k Open only for L/L mode 40k 1.25V 40k 19 MIRR VC 20k VCC 40k VS VC VCC 20 VCC 21 RFO 2 BOOST VC 80k VCC 20k LPF VCA MODE SW VCC 23 MODE 2 24 MODE 1 APC ON VC CE IN TE C FE B CE FE CE1 –2– VC TE APC ON BST C EQ IN RFO FC C CXA2555Q Pin Description Pin No. Symbol I/O Equivalent circuit Description 10k 1 LD O 1 1k APC amplifier output. 2 PD I 2 8k 10k 55k APC amplifier input. 147 3 20k 10k 20k 147 16k 3 4 PD1 PD2 I I 4 16k Input of RF summing amplifier and focus error amplifier. 174k 164k 7 GND Ground. 147 5 147 6 5 6 8 12 13 E F TE1 TE C TE I I O I O 147 147 13 VCA 36.7k 147 12 160k 8 Tracking error amplifier input for Pins 5 and 6; tracking error amplifier output for Pin 8; tracking error amplifier lowfrequency gain setting for Pin 12; tracking error amplifier output for Pin 13. –3– CXA2555Q Pin No. Symbol I/O Equivalent circuit Description 147 9 9 10 11 CE IN CE1 CE I O O 147 147 11 20k 10 Center error amplifier input for pin 9; inverting amplifier output for pin 10; non-inverting amplifier output for pin 11. 20k 147 14 164k 14 15 FE B FE O O 174k 147 15 Focus bias adjustment for Pin 14; focus error amplifier output for Pin 15. 120 16 VC O 120 16 (Vcc + GND)/2 DC voltage output. VCC 10k 17 MIRR T I 147 17 120k 80k Peak hold time constant adjustment. 10k –4– CXA2555Q Pin No. Symbol I/O Equivalent circuit Description 1.5k 80k 147 18 CP I Connects a mirror hold capacitor. Non-inverted input of mirror comparator. 18 20k 19 MIRR O 40k 147 19 Mirror comparator output. 100k 20 VCC Power supply. 3k 147 21 21 22 RFO 2 RFO 1 O O 147 22 Buffer switch output for the RF time constant setting for Pin 21. ON when Pins 23 and 24 are connected to GND. EQ signal output for Pin 22. Double-speed mode switching input. 23 MODE 2 I 147 23 40k 10k Mode 1 ×1 ×N × 1.5N × 2.0N GND VCC GND VCC Mode 2 GND GND VCC VCC 24 MODE 1 I 147 24 10k 40k N is varied according to the external resistor connected to Pin 26. Switching pin for APC amplifier ON/OFF. OFF when connected to Vcc; ON when connected to GND. 25 APC ON I 147 25 100k –5– CXA2555Q Pin No. Symbol I/O Equivalent circuit Description 5k 5k 5k 147 26 26 FC C I Input to set the RF equalizer LPF cut-off frequency. 27 5k 27 BST C I Sets the high-frequency boost amount of RF equalizer. 28 RF C I 28 10k 147 Sets the low-frequency gain of RF amplifier and RF equalizer. 430 147 29 EQ IN I 29 10k 2k RF equalizer input. 10k 20k 30 SUM OUT O 20k 147 30 RF summing amplifier output inversion. –6– CXA2555Q Pin No. Symbol I/O Equivalent circuit Description 39k 31 RFI I 147 18k 31 44k Mirror circuit input. The RF summing amplifier output is input. 15k 147 32 32 RFO O 15k RF signal output. Eye pattern check point. –7– Electrical Characteristics SW conditions E1 E2 0.3V DC current measurement 18.5 30 7 32 DC current measurement V1 = 100mVp-p f = 100kHz 16 –65 32 0V 20 43.5 E3 0V Measurement point Min. Typ. Max. Unit mA Bias conditions (Ta = 25°C, VCC = 2.5V, GND = Vc, VEE = –2.5V) No. B B Measurement item Symbol S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 Description of output waveform and measurement method 1 Current consumption ICC 2 Current consumption IEE DC current measurement –43.5 –30 –18.5 mA 140 19 275 22 mV dB 5 Offset voltage V1-1 6 Voltage gain G1-1 O O 7 VCA gain 1 G1-2 O O C 32 V1 = 100mVp-p, f = 100kHz –11.5 Difference for G1-1 V1 = 100mVp-p, f = 100kHz 4.5 Difference for G1-1 V1 = 100mVp-p, f = 10MHz Difference for G1-1 –3 –8 –4.5 dB RF DC amplifier 8 VCA gain 2 G1-3 O O A 32 8 11.5 dB 9 300mV –300mV 0V 32 32 15 15 Frequency response F1-1 O O B 32 — DC voltage measurement 1.75 2.25 DC voltage measurement DC voltage measurement V1 = 100mVp-p f = 1kHz — –60 — — –1.6 –0.95 0 60 17.5 20.5 23.5 dB V V mV dB FE amplifier –8– 300mV 300mV 10 Maximum output amplitude H V1-2 O O 11 Maximum output amplitude L V1-3 O O 12 Offset voltage V2-1 13 Voltage gain 1 G2-1 O 14 Voltage gain 2 G2-2 O 15 15 15 V1 = 100mVp-p f = 1kHz G2-1 – G2-2 V1 = 100mVp-p, f = 20kHz Difference for G2-1 15 15 15 V1 = 100mVp-p, f = 20kHz Difference for G2-2 DC voltage measurement DC voltage measurement 17.5 20.5 23.5 –2.5 –3 0 — 2.5 — dB dB dB 15 Voltage gain difference G2-3 16 Frequency response 1 F2-1 O 17 Frequency response 2 F2-2 O –3 1.9 — — 2.4 — — –2.3 –1.7 dB V V CXA2555Q 18 Maximum output amplitude H V2-2 O 19 Maximum output amplitude L V2-3 O SW conditions E1 0V 0.3V DC voltage measurement 30 V1 = 100mVp-p f = 1kHz V1 = 100mVp-p f = 1kHz G3-1 – G3-2 –2.0 17.9 20.9 23.9 –60 150 13 0V 13 mV dB E2 E3 Measurement point Min. Typ. Max. Unit Bias conditions No. B O B Measurement item Symbol S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 Description of output waveform and measurement method 20 Offset voltage V3-1 21 Voltage gain 1 G3-1 22 13 O C A B 13 13 O O 13 Voltage gain 2 G3-2 O 13 17.9 20.9 23.9 0 2.0 dB dB dB dB 23 Voltage gain difference G3-3 24 VCA gain 1 G3-4 V1 = 100mVp-p, f = 1kHz 11.9 14.9 17.9 V1 = 100mVp-p, f = 1kHz 23.9 26.9 29.9 V1 = 100mVp-p, f = 20kHz Difference for G3-1 V1 = 100mVp-p, f = 20kHz Difference for G3-2 V1 = 100mVp-p, f = 180kHz Difference for G3-1 –3 — — 25 VCA gain 2 G3-5 TE amplifier 26 Frequency response 1 F3-1 dB 27 Frequency response 2 F3-2 O 13 –3 — — dB CE amplifier –9– O O O O O O 0V O 300mV 300mV O O O O O 300mV 300mV 28 Frequency response 3 F3-3 13 –3 — — dB 29 Frequency response 4 F3-4 13 13 13 11 11 V1 = 100mVp-p, f = 180kHz Difference for G3-2 DC voltage measurement DC voltage measurement DC voltage measurement V1 = 100mVp-p, f = 1kHz Difference for G2-1 11 11 11 V1 = 100mVp-p, f = 20kHz Difference for G3-1 –3 1.9 — –90 17 — 2.4 — — –2.2 –1.7 65 20 200 23 dB V V mV dB 30 Maximum output amplitude H V3-2 31 Maximum output amplitude L V3-3 32 Offset voltage V4-1 33 Voltage gain 1 G4-1 34 Frequency response 1 F4-1 –3 DC voltage measurement 0.85 DC voltage measurement — — 1.7 — — –2.1 –0.85 dB V V CXA2555Q 35 Maximum output amplitude H V4-2 36 Maximum output amplitude L V4-3 SW conditions E1 0V 0.25 0.75 1.15 0.25 V1 = 25mVp-p, f = 100kHz 17 4.5 8 V1 = 25mVp-p, f = 100kHz Difference for G5-1 V1 = 100mVp-p, f = 2MHz Difference for G5-1 V1 = 25mVp-p, f = 1MHz Difference for G1-1 V1 = 25mVp-p, f = 10MHz Difference for G1-1 V1 = 25mVp-p, f = 15MHz Difference for G1-1 22 22 300mV –300mV 0V O O O O O O O O O O –400mV –400mV –200mV –400mV –400mV –400mV –400mV –400mV 1.0V 0V 22 22 22 19 19 19 19 19 19 19 19 V1 = 25mVp-p, f = 20MHz Difference for G1-1 V5-3 – V5-1 V5-1 – V5-4 HPF = 400Hz, LPF = 3MHz V1 = 0.8Vp-p, f = 10kHz V1 = 0.8Vp-p, f = 10kHz V1 = 0.8Vp-p, 55% AM Mod. V1 = 800mVp-p V1 = 800mVp-p V1 = 800mVp-p f (V1) = 10kHz f (V1) = 10kHz 1.5 0.8 1.15 21 22 A 22 0.3V 0V 22 V V dB 10.5 dB E2 E3 Measurement point Min. Typ. Max. Unit Bias conditions No. B B Measurement item Symbol S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 Description of output waveform and measurement method 37 Offset voltage V5-1 38 Offset voltage V5-2 39 Voltage gain 1 G5-1 O O 22.5 26.5 40 VCA gain 1 G5-2 O O 41 O B 22 Boost gain G5-3 O O 4 6.5 dB 42 22 Frequency response 1 F5-1 O O –3 — — dB 43 O O 22 Frequency response 2 F5-2 O O –3 — — dB 44 O O Frequency response 3 F5-3 O O –3 — — dB RFAC Amplifier (RF Equalizer + Sum Amplifier) MIRR – 10 – O O O 45 Frequency response 4 F5-4 O O –3 — 0.45 0.85 0.45 — 1.8 — — — 40 250 0.35 — 0.9 — — — 400 550 — — — — — — — 6 — –2.2 600 900 — — — 1.8 dB V V mV V V Hz Hz kHz kHz Vp-p CXA2555Q Vp-p 46 Maximum output amplitude H V5-3 O O 47 Maximum output amplitude L V5-4 O O 48 Output noise VN 50 High level output voltage V6-1 51 Low level output voltage V6-2 52 Mirror hold frequency response F6-1 53 Bottom hold frequency response F6-2 54 Maximum operating frequency 1 F6-3 55 Maximum operating frequency 2 F6-4 56 Minimum input voltage V6-3 57 Maximum input voltage V6-4 SW conditions E1 0V 69mV DC voltage measurement — –1.6 –0.9 DC voltage measurement –1.2 –0.35 1.4 DC voltage measurement 0.3 1.8 — 2.4 –0.9 0 1.6 DC voltage measurement I1 = 0.8mADC DC voltage measurement — — 0 0.1 123mV 177mV O 0V 0V 0.3V 16 1 1 1 1 1 0V V V V V V V E2 E3 Measurement point Min. Typ. Max. Unit Bias conditions No. B B Measurement item Symbol S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 Description of output waveform and measurement method 58 Output voltage 1 V7-1 59 Output voltage 2 V7-2 61 APC 60 Output voltage 3 V7-3 Output voltage 4 V7-4 62 Output voltage 5 V7-5 VC 63 Output voltage VC DC voltage measurement –0.1 – 11 – CXA2555Q CXA2555Q Electrical Characteristics Measurement Circuit 20k B A S9 10k 32 31 30 29 20k VCC 2k VCC C 5.1k S8 28 27 5.1k 26 S7 20k S13 VCC VEE 25 RF C RFI EQ IN FC C RFO I1 1 E2 LD SUM OUT BST C APC ON S10 VCC S12 24 S11 VCC VEE VCC VEE 10k MODE 1 VEE 2 PD MODE 2 23 1µ 3 S1 PD1 RFO 1 22 1µ 10k 4 S2 44k 5 S3 112k 44k 6 S4 PD2 RFO 2 21 E VCC 20 VCC F MIRR 19 0.033µ VEE 112k 7 GND CP 18 E3 TE C FE B CE1 8 TE1 CE IN MIRR T 17 CE TE FE VC VCC 9 S5 10k V1 E1 20k 10k 100k A S6 C B VEE 20k 10k 10k 10k 10 11 12 13 14 15 16 33µ 33µ VEE – 12 – CXA2555Q Application Circuit 10 100µ/6.3V 47k VC GND 10µH 1µ/6.3V 32 0.1µ 31 30 0.1µ 29 28 27 3.9k 6.8k 26 25 RF C RFI EQ IN SUM OUT BST C FC C RFO APC ON LD ON VCC 1 LD MODE 1 24 MODE 1 IN 2 500 100 PD MODE 2 23 1000p MODE 2 IN PD1 IN 3 PD1 RFO 1 22 4700p PD2 IN VC 62k E IN F IN 100k 4 PD2 RFO 2 21 VCC 33µ RF AC Out 5 ∗ 3p 6 E VCC 20 0.1µ VC F MIRR 19 0.1µ Mirror Out 47k 33µ 120k 7 VC 0.1µ GND CP 18 CE IN TE C FE B CE1 8 TE1 MIRR T 17 10k CE TE 9 10 11 12 13 14 15 FE 16 VC AL IN 47k 10k VC Tracking Error Out Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. Center Error Out – 13 – Focus Error Out VC CXA2555Q Description of Functions RF Block The RF signal processing is performed by this circuit. The output is separated to AC and DC. The AC is the capacitance-coupled input via the equalizer circuit and used for the EFM demodulation signal processing. The DC contains the DC component and is used for the mirror, defect and FOK signal processings. The VCA function is provided for both the AC and DC signal processing systems. Pin 28 is the control voltage input pin. (See the characteristics graphs on page 19 and page 20 for the gain and control voltage.) RF Equalizer Block Diagram is as shown below: EQ IN LPF1 DELAY FC C MIXER LPF2 LPF3 LPF4 VCA EQ OUT FC C HPF Boost FC C FC C RF C FC C BST C The equalizer function is provided for the AC signal processing system for the EFM signal demodulation. The each filter is constructed in the Bessel type which has the little group delay difference. The boost frequency and boost amount can be set by the external resistors connected to Pins 26 and 27. (See the characteristics graphs on page 19 for the boost frequency and boost amount.) The transmittance for each filter is as follows: HPF: (KS2) / (S2 + 3.22597S + 2.94933) LPF1: (2.94933 ) / (S2 + 3.22597S + 2.94933) LPF2: (3.32507 ) / (S2 + 2.75939S + 3.32507) LPF3: (4.20534 ) / (S2 + 1.82061S + 4.20534) LPF4: (1.68536 ) / (S + 1.68536) – 14 – CXA2555Q RF DC Amplifier The signal currents from the photodiodes A, B, C and D are I-V converted and input to Pins 3 and 4 as PD1 = A + C, PD2 = B + D. These signals are added by the RF summing amplifier, inverted by the RF drive amplifier and output to Pin 32. The VCA control voltage on Pin 28 is used for the gain adjustment. 47k Vc RF C SUM OUT 30 10k I-V PD1 PD2 I-V 20k 3 20k 4 Vc RF Summing Amp VCA 28 RFO 32 The low frequency component of the RFO output voltage is as follows: VRFO = 4.9 × (PD1 + PD2) (RFC voltage = 1/2 VC) Focus Error Amplifier The operation of PD2-PD1 is performed and the resulting signal is output to Pin 15. 27p 174k I-V PD1 PD2 16k 3 16k 4 164k 27p 14 FE B 47k Vc Focus Error Amp 87k 15 FE I-V The low frequency component of the FE output voltage is as follows: VFE = 174k × (PD2 – PD1) 16k = 10.9 × (PD2 – PD1) – 15 – CXA2555Q Tracking Error Amplifier The signal current from the photodiode F is I-V converted and input to Pin 6 via the input resistor. The signal current from the photodiode E is I-V converted and input to Pin 5 after its gain is adjusted by the volume. These signals undergo operational amplification at the tracking error amplifier, VCA and tracking drive amplifier and they are output to Pin 13. 14p Vc 62k 100k I-V 44k I-V 112k TE1 8 12 TE C Vc 47k E 73.4k VCA Vc 13 TE 2p 320k 5 F 6 The low frequency component of the TE output voltage is as follows: VTE = 112k 320k × × (F – E) 44k 73.4k (TEC voltage = 1/2 VC) = 11.1 × (F – E) Center Error Amplifier The input signal is operational amplified by the center error amplifier and center drive amplifier after passing via the input resistor and then it is output to Pin 11. 20k 10k Vin 100k CE1 10 CE IN 9 23k 10k Vc 20k 11 CE The low frequency component of the CE output voltage is as follows: VCE = 100k × 10k 20k × Vin 20k = 10 × Vin – 16 – CXA2555Q Mirror Circuit The mirror circuit performs peak and bottom hold after RFI signal has been amplified. The peak hold is executed with the time constant which follows the traverse signal of 100kHz for L/L mode (both of Pins 23 and 24 are connected to GND) and maximum 600kHz (adjustable with the DC voltage on Pin 17) for L/H, H/L, H/H modes. The bottom hold is executed with the time constant which follows the rotation cycle envelope fluctuation. Mirr Hold Amp 18 K 20k Mirr Comparator Vcc CP 0.33µ Vc 3.125V 44k RFI 18k 31 Vc Mirr Amp RFO G 10p Vc Vc 39k 44p H I Peak & Bottom Hold 80k J Mirr Dif Amp 80k 1.0V 51k 22k 80k Open only 80k for L/L mode 1.3V 17 MIRR T 19 MIRR RFO 0V G (RFI) 0V H (PEAK HOLD) 0V I (BOTTOM HOLD) 0V J K (MIRROR HOLD) H MIRR L The mirror signal is output by comparing to the signal K (2/3 level of the J peak value which is peak-held with a large time constant) where the difference of hold signals H and I is obtained. The mirror output is low for tracks on the disc and high for the area between tracks (the mirror areas). In addition, a high signal is output when a defect is detected. The mirror hold time constant must be sufficiently large in comparison with the traverse signal. – 17 – CXA2555Q Center Voltage Generation Circuit The center voltage of VR = (Vcc + GND)/2 is supplied. The maximum current is approximately ±3mA VCC VCC 40k Vc Buffer 40k 25 16 VR Vc APC Circuit When the laser diode is driven by a constant current, the optical power output has extremely large negative temperature characteristics. The APC circuit is used to maintain the optical power output at a constant level. The laser diode current is controlled according to the monitor photodiode output. APC is ON by connecting APC_ON pin to GND; it is OFF by connecting the pin to Vcc. VCC 8k PD 2 56k 10k 1k 1 56k 100µ LD 10 10k 55k 10k 1.25V 10µ 100 500 1µ – 18 – CXA2555Q RF AC Characteristics Graphs (Pin 22) Frequency response Boost gain characteristics 28 1 VC 2 Rbst = 3.9kΩ RF C = 26 Rfc = 6.8kΩ L/L H/L L/H H/H 8 7 6 5 Rfc =6.8kΩ, 1 RF C = VC 2 Boost [dB] Gain [dB] 4 3 2 24 22 1 0 20 10–1 –1 100 Frequency [MHz] 101 0 5 10 Rbst [kΩ] 15 20 Cut-off frequency 25 Rbst = 0Ω, RF C = 20 H/H Mode 1 VC 2 35 VCA characteristics 30 Fc [MHz] 15 Gv [dB] 4 6 8 10 12 14 Rfc [kΩ] 16 18 20 25 20 10 15 5 10 0.8 1.0 1.2 1.4 RF C [V] 1.6 1.8 Notes) In the graphs above, Rfc: FC C (pin 26) external resistor value Rbst: BST C (pin 27) external resistor value ∗ To ensure stable operation, it is recommended to select Rfc value of 6.2kΩ and above, and Rbst of 10kΩ and below in all cases. – 19 – CXA2555Q RF DC Characteristics Graphs (Pin 32) Frequency response 25 RF C = 1 VC 2 30 28 26 20 24 VCA characteristics Gain [dB] Gv [dB] 15 10 10–1 22 20 18 16 14 12 10 100 Frequency [MHz] 101 0.8 1.0 1.2 1.4 RF C [V] 1.6 1.8 TE Characteristics Graphs (Pin 13) Frequency response 25 TE C = H/L, L/H, H/H 20 1 VC 2 30 28 26 24 VCA characteristics Gain [dB] Gv [dB] 103 22 20 18 16 14 12 L/L 15 10 100 10 101 102 Frequency [kHz] 0.4 0.6 0.8 1.0 1.2 1.4 TE C [V] 1.6 1.8 2.0 FE frequency response (Pin 15) Frequency response 25 CE frequency response (Pin 11) Frequency response 25 20 20 Gain [dB] 15 Gain [dB] 15 10 100 101 102 Frequency [kHz] 103 10 100 101 102 Frequency [kHz] 103 – 20 – CXA2555Q MIRROR Characteristics Graph (Pin 19) Maximum operating frequency vs. MIRR T pin voltage 600 550 500 450 Vin = –0.4VDC, 800mVp-p H/L, L/H, or H/H Mode fmax [kHz] 400 350 300 250 200 150 100 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 MIRR T [V] APC Characteristics Graph (Pin 1) LD voltage vs. PD voltage 5.0 4.5 4.0 3.5 LD [V] 3.0 2.5 2.0 1.5 1.0 0.5 80 100 120 140 PD [mV] 160 180 200 – 21 – CXA2555Q Package Outline Unit: mm 32PIN QFP (PLASTIC) 9.0 ± 0.2 + 0.3 7.0 – 0.1 24 17 + 0.35 1.5 – 0.15 0.1 25 16 32 9 + 0.2 0.1 – 0.1 1 0.8 + 0.15 0.3 – 0.1 8 + 0.1 0.127 – 0.05 0° to 10° ± 0.12 M PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE QFP-32P-L01 ∗QFP032-P-0707-A LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING 42 ALLOY 0.2g – 22 – 0.50 (8.0)