2N5013

2N5013 thru 2N5015 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET FEATURES: • • • • • • • BVCER and BVCEO to 1000 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200° C Operating, Gold Eutectic Die Attach 2N5010 thru 2N5012 Also Available, Contact Factory TX, TXV, and S-Level Screening Available 0.5 AMP 800 – 1000 Volts NPN Transistor Maximum Ratings Symbol Value Units Collector – Emitter Voltage (RBE = 1KΩ) Collector – Base Voltage Emitter – Base Voltage Peak Collector Current Peak Base Current Total Device Dissipation @ TC = 100º C Derate above 100º C Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: TO-5 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR 2N5013 2N5014 2N5015 2N5013 2N5014 2N5015 VCER VCBO VEBO IC IB PD Tj, Tstg RθJC 800 900 1000 800 900 1000 5 0.5 50 2.0 20 -65 to +200 50 V V V A mA W mW/ºC ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0043A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2N5013 thru 2N5015 Electrical Characteristic 1/ Collector – Emitter Breakdown Voltage (IC = 200µADC, RBE = 1KΩ) Collector–Base Breakdown Voltage (IC = 200µADC) Emitter–Base Breakdown Voltage (IE = 50µADC) Collector Cutoff Current VCB = 650V (2N5013) VCB = 700V (2N5014) VCB = 750V (2N5015) VCB = 650V (2N5013) VCB = 700V (2N5014) VCB = 750V (2N5015) 2N5013 2N5014 2N5015 2N5013 2N5014 2N5015 Symbol BVCER Min 800 900 1000 800 900 1000 5 –– –– –– –– –– –– 10 30 –– –– –– 20 –– –– –– –– –– Max –– Units V BVCBO BVEBO –– –– 12 12 12 100 100 100 V V (TC = 100°) ICBO µAdc DC Current Gain 2/ (IC = 5mADC, VCE = 10VDC) (IC = 20mADC, VCE = 10VDC) Collector – Emitter Saturation Voltage 2/ (IC = 20mADC, IB = 5mADC) Base – Emitter Saturation Voltage 2/ (IC = 20mADC, IB = 5mADC) Current Gain Bandwidth Product (IC = 20mADC, VCE = 10VDC, f = 1 – 20MHz) Output Capacitance (VCB = 10VDC, IE = 0ADC, f = 1.0MHz) 2N5013 2N5014 2N5015 hFE VCE(Sat) VBE(Sat) fT Cob td VCC = 125VDC, IC = 100mADC, IB1 = 20mADC, IB2 = 20mADC tr ts tf 180 1.6 1.6 1.8 1.0 –– 30 200 1200 3.0 800 –– Vdc Vdc MHz pF nsec nsec µsec nsec Delay Time Rise Time Storage Time Fall Time NOTES: 1/ Unless Otherwise Specified: All Tests @25ºC 2/ Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2% For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.