SPT35P3

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT35P3 4 AMPS 60 VOLTS DUAL NPN DARLINGTON TRANSISTOR TO-3, 8 Leads Designer’s Data Sheet • • • • • • • • FEATURES: Cost-Saving Monolithic Design with Associated Commutating Diodes in A Single Package: Reduced Size, Improved Efficiency High Current Gain Low Saturation Voltage High Energy Capability Electrically Isolated Case Hermetically Sealed 8 Pin TO-3 Package High Current Replacement for PIC6006 TX, TXV, and S-Level Screening Available. Consult Factory. APPLICATIONS: Full Wave Bridge Circuits for Converters and StepperMotor Drives • MAXIMUM RATINGS Collector – Emitter Voltage Collector – Base Voltage Collector Current Base Current Diode Average Forward Current Total Device Dissipation Operating and Storage Temperature Thermal Resistance, Junction to Case SCHEMATIC 1 2 7 8 o Symbol VCEO VCBO Continuous Peak IC ICM IB IO @ TC = 25 C Per Darlington PD TJ & Tstg Per Device Per Transistor RθJC Value 60 60 4 8 0.2 2 60 30 -65 to +175 2.5 5.0 Units Volts Volts Amps Amps Amps Watts o C o C/W 3 6K 150 150 6K 6 4 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 5 DATA SHEET #: TR0080D DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT35P3 ELECTRICAL CHARACTERISTICS (Per Darlington) Collector – Emitter Sustaining Voltage * (Each Darlington) Collector – Base Breakdown Voltage * Collector Cutoff Current (VCE = 40 V) Emitter Cutoff Current (VBE = 5 V) DC Current Gain * (VCE = 5 V) Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Commutating Diodes (Per Darlington) Break Down Voltage Reverse Leakage Current Forward Voltage Drop Reverse Recovery Time • IR = 100 µA VR = 40 V o VR = 40 V, TC = 100 C IF = 2 A IF = 0.5 A, IR = 0.5 A, IRR = 0.25 A IC = 2 A, TA = 25 C o IC = 0.4 A, TA = -55 C IC = 2 A, IB = 4 mA IC = 2 A, IB = 4 mA o Symbol IC = 10 mA IC = 1 mA TC = 25 C o TC = 150 C o Min 60 60 –– –– Max –– –– 0.1 200 1.5 Unit Volts Volts µA mA BVCEO BVCBO ICEO IEBO hFE VCE(SAT) VBE (SAT) Symbol BVR IR1 IR2 VF tRR 2000 100 –– –– Min 60 –– –– –– –– –– –– 1.5 2.0 Max –– 0.5 500 1.5 2 Volts Volts Unit Volts µA µA Volts µs Pulse Test: Pulse Width = 300 µsec max, Duty Cycle = 2% max PACKAGE OUTLINE: TO-3 (8 Pins) R.525 MAX .135 MAX Ø.505 .495 LEAD CIRCLE 40° REF R.188 MAX 67 Ø.875 MAX 5 4 32 8 1 80° REF 2x Ø.165 .151 .310 .275 .460 .215 8x Ø.043 .037 1.197 1.177 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0080D DOC