M74HC242B1R

M 54/74HC242 M54/74HC243 QUAD BUS TRANSCEIVER (3-STATE) . . . . . . . . HIGH SPEED tPD = 9 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS BALANCED PROPAGATION DELAYS tPLH = tPHL SYMMETRICAL OUTPUT IMPEDANCE IOL = IOH = 6 mA (MIN.) HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS242/243 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) DESCRIPTION The M54/74HC242/243 are high speed CMOS QUAD BUS TRANSCEIVER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. The HC242/243 are 3 STATE bi-directional inverting and non-inverting buffers and are intended for two-way asynchronous communication between data buses. They are high drive current outputs which enable high speed operation when driving large bus capacitances. Each device has one active high enable (GBA), and one active low enable (GAB). GBA enables the A outputs and GAB enables the B outputs. All inputs are equipped with protection circuits against static discharge and transient excess voltage. INPUT AND OUTPUT EQUIVALENT CIRCUIT ORDER CODES : M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1R PIN CONNECTIONS (top view) HC242 HC243 NC = No Internal Connection October 1993 1/11 M54/M74HC242/243 C HIP CARRIER TRUTH TABLE INPUTS GAB GBA H L H L H L L H FUNCTION A BUS B BUS OUTPUT INPUT OUTPUTS HC242 HC243 A=B A=B B=A Z Z PIN DESCRIPTION PIN No 1 2, 12 3, 4, 5, 6 11, 10, 9, 8 13 7 14 SYMBOL GAB NC 1A to 4A 1B to 4B GBA GND VCC NAME AND FUNCTION Output Enable Input (active LOW) Not connected Data Inputs/Outputs Data Inputs/Outputs Output Enable Input Ground (0V) Positive Supply Voltage INPUT OUTPUT B = A HIGH IMPEDANCE Z HIGH IMPEDANCE Z IEC LOGIC SYMBOLS HC242 HC243 2/11 M54/M74HC242/243 C IRCUIT DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 35 ± 70 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o C o C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC 3/11 M54/M74HC242/243 RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V C C ns o o VCC = 2 V VCC = 4.5 V VCC = 6 V D C SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II IOZ ICC Input Leakage Current 3 State Output Off-state Current Quiescent Supply Current 6.0 6.0 6.0 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ±0.1 ±0.5 4 TA = 25 oC 54HC and 74HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 VI = IO=-20 µA VIH or V IL IO=-6.0 mA IO=-7.8 mA VI = IO= 20 µA VIH or V IL IO= 6.0 mA IO= 7.8 mA VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 ±5 40 Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 ±10 80 µA µA µA V V Max. Min. 1.5 3.15 4.2 0.5 1.35 1.8 V Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage V IL V OH 4/11 M54/M74HC242/243 AC ELECTRICAL CHARACTERISTICS (Input t r = t f = 6 ns) Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 CL (pF) TA = 25 oC 54HC and 74HC Min. Typ. Max. 25 60 7 12 6 10 39 90 13 18 11 15 51 145 17 29 14 25 57 145 18 29 15 25 70 175 22 35 19 30 45 150 20 30 17 26 5 10 30 35 Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 75 90 15 18 13 15 115 135 23 27 20 23 180 220 36 44 31 37 180 220 36 44 31 37 220 265 44 53 37 45 190 225 38 45 32 38 10 10 Unit tTLH tTHL tPLH tPHL Output Transition Time Propagation Delay Time 50 ns 50 ns 150 ns tPZL tPZH 3 State Output Enable Time 50 RL = 1 KΩ ns 150 RL = 1 KΩ ns tPLZ tPHZ CIN CPD (*) 3 State Output Disable Time Input Capacitance Power Dissipation Capacitance 50 RL = 1 KΩ ns pF pF for HC242 for HC243 (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC SWITCHING CHARACTERISTICS TEST WAVEFORM 5/11 M54/M74HC242/243 TEST CIRCUIT ICC (Opr.) C CP CALCULATION CPD is to be calculated with the following formula by using the measured value of ICC (Opr.) in the test circuit opposite ICC (Opr.) CPD = fIN x VCC In determining the typical value of CPD, a relatively high frequency of 1MHz was applied to fIN, in order to eliminate any error caused by the quiescent supply current. 6/11 M54/M74HC242/243 Plastic DIP14 MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001A 7/11 M54/M74HC242/243 Ceramic DIP14/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 1.52 0.38 15.24 2.79 0.55 1.52 0.31 2.54 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.060 3.3 0.015 0.600 0.110 0.022 0.060 0.012 0.100 0.406 0.317 0.200 TYP. MAX. 20 7.0 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053C 8/11 M54/M74HC242/243 SO14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 9/11 M54/M74HC242/243 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 10/11 M54/M74HC242/243 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11