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STD110N8F6

STD110N8F6

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO252

  • 描述:

    表面贴装型 N 通道 80 V 80A(Tc) 167W(Tc) DPAK

  • 数据手册
  • 价格&库存
STD110N8F6 数据手册
STD110N8F6 N-channel 80 V, 0.0056 Ω typ.,80 A, STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features 7$%   Order code VDS RDS(on)max ID PTOT STD110N8F6 80 V 0.0065 Ω 80 A 167 W • Very low on-resistance • Very low gate charge  • High avalanche ruggedness • Low gate drive power loss '3$. Applications Figure 1. Internal schematic diagram • Switching applications Description ' 7$% This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. *  6  $0Y Table 1. Device summary Order code Marking Package Packing STD110N8F6 110N8F6 DPAK Tube December 2014 This is information on a product in full production. DocID027274 Rev 1 1/16 www.st.com Contents STD110N8F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 8 DocID027274 Rev 1 STD110N8F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 72 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 167 W EAS Single pulse avalanche energy 180 mJ TJ Operating junction temperature Tstg Storage temperature IDM (1) PTOT (2) °C -55 to 175 °C 1. Pulse width is limited by safe operating area 2. Starting TJ = 25 °C, ID = 55 A, VDD = 60 V Table 3. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Value Unit Thermal resistance junction-case max. 0.9 °C/W Thermal resistance junction-pcb max. 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. DocID027274 Rev 1 3/16 16 Electrical characteristics 2 STD110N8F6 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On/off-state Symbol Parameter V(BR)DSS Drain-source breakdown voltage IDSS Zero-gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. 80 Unit V VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TC = 125 °C 100 µA VDS = 0, VGS = +20 V 100 nA 4.5 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on- resistance 2.5 VGS = 10 V, ID = 40 A 0.0056 0.0065 Ω Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 40 V, f = 1 MHz, VGS = 0 VDD = 40 V, ID = 80 A, VGS = 10 V (see Figure 14) Min. Typ. Max. Unit - 9130 - pF - 320 - pF - 225 - pF - 150 - nC - 40 - nC - 30 - nC Min. Typ. Max. Unit - 24 - ns - 61 - ns - 162 - ns - 48 - ns Table 6. Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 40 V, ID = 55 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) Fall time DocID027274 Rev 1 STD110N8F6 Electrical characteristics Table 7. Source-drain diode Symbol VSD(1) trr Parameter Test conditions Forward on voltage ISD = 80 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD = 64 V (see Figure 15) Min. Typ. - Max. Unit 1.2 V - 30 ns - 34 nC - 2.3 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027274 Rev 1 5/16 16 Electrical characteristics 2.1 STD110N8F6 Electrical characteristics (curves) Figure 2. Safe operating area ,' $ Figure 3. Thermal impedance *,3*)65 . *,3*)65 į  2 S /L HU P DW LWH LR G QL E\ Q P WKL D[ VD 5 UH D ' 6 LV   RQ   —V      PV 6LQJOHSXOVH 7M ƒ& 7F ƒ& 6LQJOHSXOVH    PV 9'6 9  Figure 4. Output characteristics  ,' $ 9*6 9 ,' $ WS V *,3*/0 9'6 9  9     Figure 5. Transfer characteristics *,3*/0              9       Figure 6. Gate charge vs gate-source *,3*)65 9*6 9 9'' 9 ,' $    9'6 9     9*6 9 Figure 7. Static drain-source on-resistance *,3*)65 5'6 RQ Pȍ 9*6 9           6/16      4J Q&   DocID027274 Rev 1     ,' $ STD110N8F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature *,3*/0 & S) *,3*/0 9*6 WK QRUP ,' —$   &LVV    &RVV &UVV          9'6 9 Figure 10. Normalized on-resistance *,3*/0 5'6 RQ       7- ƒ& Figure 11. Normalized V(BR)DSS vs temperature *,3*/0 9 %5 '66 QRUP QRUP 9*6 9 ,' P$                7- ƒ&       7- ƒ& Figure 12. Drain-source diode forward characteristics *,3*/0 96' 9  7- ƒ&    7- ƒ& 7- ƒ&         ,6' $ DocID027274 Rev 1 7/16 16 Test circuits 3 STD110N8F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 DocID027274 Rev 1 10% AM01473v1 STD110N8F6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027274 Rev 1 9/16 16 Package information STD110N8F6 Figure 19. DPAK (TO-252) type A drawing B5 10/16 DocID027274 Rev 1 STD110N8F6 Package information Table 8. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.80 L2 0.80 L4 0.60 1.00 R V2 0.20 0° 8° DocID027274 Rev 1 11/16 16 Package information STD110N8F6 Figure 20. DPAK (TO-252) footprint (a) )3B5 a. All dimensions are in millimeters 12/16 DocID027274 Rev 1 STD110N8F6 5 Packing information Packing information Figure 21. Tape for DPAK (TO-252) SLWFKHVFXPXODWLYH WROHUDQFHRQWDSHPP 7 3 7RSFRYHU WDSH 3 ' ( ) % . )RUPDFKLQHUHIRQO\ LQFOXGLQJGUDIWDQG UDGLLFRQFHQWULFDURXQG% : % $ 3 ' 8VHUGLUHFWLRQRIIHHG 5 %HQGLQJUDGLXV 8VHUGLUHFWLRQRIIHHG $0Y DocID027274 Rev 1 13/16 16 Packing information STD110N8F6 Figure 22. Reel for DPAK (TO-252) 7 5(( /',0(16,216 PPPLQ $FFHVVKROH $WVO RWORFDWLRQ % ' & 1 $ )XOOUDGLXV *PHDVXUHGDWKXE 7DSHVORW LQFRUHIRU WDSHVWDUWPPPLQ ZLGWK $0Y Table 9. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 14/16 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID027274 Rev 1 18.4 22.4 STD110N8F6 6 Revision history Revision history Table 10. Document revision history Date Revision 15-Dec-2014 1 Changes First release. DocID027274 Rev 1 15/16 16 STD110N8F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 16/16 DocID027274 Rev 1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: STD110N8F6
STD110N8F6 价格&库存

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STD110N8F6
  •  国内价格
  • 1+4.32913
  • 10+3.99612
  • 30+3.92952

库存:5