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STF12NM50N

STF12NM50N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 500V 11A TO220FP

  • 数据手册
  • 价格&库存
STF12NM50N 数据手册
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N 550 V 0.38 Ω 11 A STD12NM50N 550 V 0.38 Ω 11 A STI12NM50N 550 V 0.38 Ω 11 A STF12NM50N 550 V 0.38 Ω 11 A (1) STP12NM50N 550 V 0.38 Ω 11 A 3 12 2 I²PAK TO-220 3 DPAK r P e 1 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application t e l o D²PAK ) (s Switching applications u d o 1 3 ■ ) s ( ct 3 1 s b O Figure 1. 3 1 2 TO-220FP Internal schematic diagram t c u Description d o r This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STB12NM50N B12NM50N D²PAK Tape and reel STD12NM50N D12NM50N DPAK Tape and reel STI12NM50N I12NM50N I²PAK Tube STF12NM50N F12NM50N TO-220FP Tube STP12NM50N P12NM50N TO-220 Tube July 2008 Rev 8 1/19 www.st.com 19 Contents STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/19 s b O STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 / I²PAK TO-220FP D²PAK / DPAK Unit VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 11 11(1) A ID Drain current (continuous) at TC=100 °C 6.7 6.7(1) A Drain current (pulsed) 44 44 (1) A Total dissipation at TC = 25 °C 100 25 W IDM (2) PTOT dv/dt(3) Peak diode recovery voltage slope e t e l VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature TJ ) s ( ct Pr u d o 15 -- o s b V/ns 2500 V -55 to 150 °C 150 °C Max. operating junction temperature O ) 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area s ( t c 3. ISD ≤ 11A, di/dt ≤ 400A/µs, VDD =80%V(BR)DSS Table 3. Symbol b O u d o r P e Value Parameter Unit TO-220 I²PAK DPAK D²PAK TO-220FP Rthj-case Thermal resistance junctioncase max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max let so Thermal data Tl Table 4. Symbol 1.25 62.5 -- Maximum lead temperature for soldering purposes -- 5 °C/W -- -- 62.5 °C/W 50 30 -- °C/W 300 °C Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25°C, Id=Ias, Vdd=50V) Value Unit 5 A 350 mJ 3/19 Electrical characteristics 2 STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS dv/dt(1) Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS= 0 IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5.5 A VDS = max rating@125 °C Symbol gfs (1) ) (s ) s ( ct u d o 1 100 µA µA 100 nA r P e 3 4 V 0.29 0.38 Ω Min Typ. Max Unit 2 t e l o Test conditions Forward transconductance VDS =15 V, ID = 5.5 A 8 S Input capacitance Output capacitance Reverse transfer capacitance r P e VDS =50 V, f=1 MHz, VGS=0 940 100 10 pF pF pF VGS=0, VDS =0 to 400 V 130 pF Qg VDD=400 V, ID = 11 A 30 6 15 nC nC nC 4.5 Ω Ciss Coss Crss t e l o u d o Coss eq(2) Equivalent output capacitance O V/ns s b O Parameter ct Unit V VDS = max rating, Zero gate voltage drain current (VGS = 0) Dynamic Max 44 IDSS Table 6. Typ. 500 Peak diode recovery voltage VDD=400 V, ID=11 A, slope VGS=10 V 1. Characteristic value at turn off inductive load bs Min Qgd Total gate charge Gate-source charge Gate-drain charge Rg Gate input resistance Qgs VGS =10 V (see Figure 17) f=1 MHz Gate DC Bias=0 test signal level=20 mV open drain 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/19 STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Test conditions Turn-on delay time Rise time Turn-off delay time Fall time RG=4.7 Ω, VGS=10 V Parameter Test conditions Forward on voltage ISD=11 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, VDD=100 V trr Qrr IRRM Unit ns ns ns ns Min Typ. Reverse recovery time Reverse recovery charge Reverse recovery current t e l o di/dt = 100 A/µs, (see Figure 18) bs ISD=11 A, di/dt = 100 A/µs, VDD=100 V, Tj=150 °C O ) (see Figure 18) u d o r P e Max Unit 11 A 44 A 1.3 V ) s ( ct Source-drain current VSD(2) IRRM Max 15 15 60 14 (see Figure 16) Source-drain current (pulsed) Qrr Typ. VDD=250 V, ID= 5.5 A, ISDM(1) trr Min Source drain diode Symbol ISD Electrical characteristics 340 3.5 20 ns µC A 420 4 20 ns µC A s ( t c 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% u d o r P e t e l o s b O 5/19 Electrical characteristics STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220/ DPAK/ D²PAK / I²PAK Figure 3. Thermal impedance for TO-220/ DPAK/ D²PAK / I²PAK ) s ( ct Figure 4. Safe operating area for TO-220FP ) (s Figure 5. u d o r P e Thermal impedance for TO-220FP t e l o s b O t c u d o r P e t e l o bs Figure 6. O 6/19 Output characteristics Figure 7. Transfer characteristics STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Figure 8. Transconductance Figure 9. Electrical characteristics Static drain-source on resistance ) s ( ct u d o r P e Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations t e l o ) (s s b O t c u d o r P e t e l o Figure 12. Normalized gate threshold voltage vs temperature s b O Figure 13. Normalized on resistance vs temperature 7/19 Electrical characteristics STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 8/19 s b O STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N 3 Test circuit Test circuit Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit ) s ( ct u d o r P e Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit t e l o ) (s s b O t c u d o r P e t e l o Figure 20. Unclamped inductive waveform s b O Figure 21. Switching time waveform 9/19 Package mechanical data 4 STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/19 s b O STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 1.27 0.181 0.034 0.066 0.027 0.62 ) s ( ct 0.050 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 bs t e l o r P e 3.85 2.95 u d o 0.147 0.104 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 O ) s ( t c u d o r P e t e l o s b O 11/19 Package mechanical data STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 G 4.95 5.20 0.195 G1 2.40 2.70 0.094 H 10 10.40 0.393 L3 28.6 30.6 1.126 L4 9.80 10.60 0.385 L5 2.9 3.6 L6 15.90 16.40 L7 9 9.30 Dia 3 3.2 0.626 o r P 0.106 0.409 1.204 0.417 0.141 0.645 0.354 0.366 0.118 0.126 E t c u A e t e l 0.114 b O B D d o r let L3 L6 F2 H G G1 Dia F L7 F1 P e du 0.630 so ) s ( ct 0.067 0.204 16 ) (s O Min. D L2 o s b Max. L2 L5 1 2 3 L4 7012510-I 12/19 STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 ) (s Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ ) s ( ct u d o r P e t e l o Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 s b O t c u d o r P e t e l o s b O 13/19 Package mechanical data STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° ) (s t c u d o r P e t e l o s b O 0079457_M 14/19 Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 Typ 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° e t e ol s b O ) s ( ct du o r P 5.28 15.85 2.69 2.79 1.40 1.75 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Package mechanical data TO-252 (DPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 ) s ( ct 5.10 E du 6.40 6.60 E1 4.70 e 2.28 e1 4.40 H 9.35 L 1 e t e ol L1 o r P 4.60 10.10 2.80 bs L2 L4 0.60 O ) R 0o V2 0.80 1 0.20 8o s ( t c u d o r P e t e l o s b O 0068772_G 15/19 Packaging mechanical data 5 STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Packaging mechanical data DPAK FOOTPRINT ) s ( ct All dimensions are in millimeters u d o r P e TAPE AND REEL SHIPMENT t e l o REEL MECHANICAL DATA DIM. )- s ( t c u d o TAPE MECHANICAL DATA DIM. 16/19 inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 e t e ol s b O Pr mm B1 D 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 s b O mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T MAX. inch MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Packaging mechanical data D2PAK FOOTPRINT ) s ( ct u d o r P e TAPE AND REEL SHIPMENT let REEL MECHANICAL DATA DIM. o s b O ) s ( t c u d o TAPE MECHANICAL DATA r P e DIM. let O o s b mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 17/19 Revision history 6 STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N Revision history Table 9. Document revision history Date Revision Changes 24-May-2005 1 Initial release 10-Jun-2005 2 Inserted new row in Table 7.: Switching times 28-Sep-2005 3 Document status promoted from preliminary data to datasheet. 14-Oct-2005 4 Modified Figure 6, Figure 9 06-Mar-2006 5 Modified Figure 8 29-Mar-2006 6 Modified value on Table 5. 14-Nov-2006 7 Document reformatted no content change 24-Jul-2008 8 – Added I²PAK; – Table 3: Thermal data has been updated; – Figure 11: Capacitance variations changed. u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 18/19 ) s ( ct s b O STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 19/19