STF13N80K5

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data Features TAB Order code VDS RDS(on) max. PTOT ID 190 W STB13N80K5 3 D2PAK 1 2 TO-220FP TAB STF13N80K5 800 V 0.45 Ω 12 A STP13N80K5 190 W STW13N80K5 TO-220 1 2 3 3 TO-247 2 1 Figure 1: Internal schematic diagram      35 W Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking STB13N80K5 STF13N80K5 STP13N80K5 13N80K5 STW13N80K5 September 2017 Package Packing D²PAK Tape and reel TO-220FP TO-220 Tube TO-247 DocID024348 Rev 4 This is information on a product in full production. 1/23 www.st.com Contents STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 5 2/23 4.1 D²PAK (TO-263) type A package information ................................. 11 4.2 TO-220FP package information ...................................................... 14 4.3 TO-220 type A packing information ................................................. 16 4.4 TO-247 package information ........................................................... 18 4.5 D²PAK type A packing information .................................................. 20 Revision history ............................................................................ 22 DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Value Symbol Parameter VGS D²PAK, TO-220, TO-247 Gate-source voltage ID ±30 Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C 12 (1) A 7.6 7.6 (1) A 48 (1) A Drain current (pulsed) 48 PTOT Total dissipation at TC = 25 °C 190 VISO Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, TC = 25 °C) dv/dt (4) Tj Peak diode recovery voltage slope 4.5 MOSFET dv/dt ruggedness 50 Operating junction temperature range Tstg V 12 IDM(2) dv/dt (3) Unit TO-220FP 35 W 2500 V V/ns -55 to 150 Storage temperature range °C Notes: (1)Limited (2)Pulse (3)I SD (4)V by package. width limited by safe operating area. ≤ 12 A, di/dt =100 A/μs; VDS peak < V(BR)DSS. DS ≤ 640 V. Table 3: Thermal data Value Symbol Parameter D²PAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) Thermal resistance junction-pcb TO-220 Unit TO-220FP TO-247 3.57 0.66 °C/W 50 °C/W 0.66 62.5 30 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2 oz Cu. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 148 mJ DocID024348 Rev 4 3/23 Electrical characteristics 2 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. Unit 800 V VGS = 0 V, VDS = 800 V 1 µA VGS = 0 V, VDS = 800 V, TC = 125 ° C(1) 50 µA ±10 µA 4 5 V 0.37 0.45 Ω Min. Typ. Max. Unit - 870 - pF - 50 - pF - 2 - pF - 110 - pF - 43 - pF IDSS Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDD = VGS, ID = 100 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 6 A 3 Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Rg Intrinsic gate resistance f = 1 MHz, ID= 0 A - 5 - Ω Qg Total gate charge - 29 - nC Qgs Gate-source charge - 7 - nC Qgd Gate-drain charge VDD = 640 V, ID = 2.5 A VGS= 0 to 10 V (see Figure 22: "Test circuit for gate charge behavior") - 18 - nC VGS = 0 V, VDS = 0 to 640 V Notes: (1)C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. (2) Co(er) is a constant capacitance value that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 4/23 DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics Table 7: Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD= 400 V, ID = 6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21: "Test circuit for resistive load switching times" and Figure 26: "Switching time waveform") Rise time Turn-off delay time Fall time Min. Typ. Max. Unit - 16 - ns - 16 - ns - 42 - ns - 16 - ns Min. Typ. Max. Unit Table 8: Source-drain diode Symbol Parameter Test conditions ISD Source-drain current - 14 A ISDM(1) Source-drain current (pulsed) - 56 A VSD(2) Forward on voltage ISD = 12 A, VGS = 0 V - 1.5 V trr Reverse recovery time - 406 ns Qrr Reverse recovery charge - 5.7 μC IRRM Reverse recovery current ISD = 12 A, di/dt = 100 A/μs, VDD = 60 V (see Figure 23: "Test circuit for inductive load switching and diode recovery times") - 28 A ISD = 12 A, di/dt = 100 A/μs, VDD= 60 V, Tj= 150 °C (see Figure 23: "Test circuit for inductive load switching and diode recovery times") - 600 ns - 7.9 μC - 26 A Min. Typ. Max. Unit ±30 - - V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1) Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 μs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS= ±1 mA, ID= 0 A The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DocID024348 Rev 4 5/23 Electrical characteristics 2.1 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics (curves) Figure 2: Safe operating area for D²PAK Figure 3: Thermal impedance for D²PAK Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP Figure 6: Safe operating area for TO-220 Figure 7: Thermal impedance for TO-220 6/23 DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics Figure 8: Safe operating area for TO-247 Figure 9: Thermal impedance for TO-247 Figure 10: Output characteristics Figure 11: Transfer characteristics Figure 12: Gate charge vs gate-source voltage Figure 13: Static drain-source on-resistance DocID024348 Rev 4 7/23 Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Figure 14: Capacitance variations Figure 15: Output capacitance stored energy Figure 16: Normalized gate threshold voltage vs temperature Figure 17: Normalized on-resistance vs temperature Figure 18: Normalized V(BR)DSS vs temperature Figure 19: Source-drain diode forward characteristics 8/23 DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics Figure 20: Maximum avalanche energy vs. starting Tj EAS (mJ) DocID024348 Rev 4 9/23 Test circuits 3 10/23 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Test circuits Figure 21: Test circuit for resistive load switching times Figure 22: Test circuit for gate charge behavior Figure 23: Test circuit for inductive load switching and diode recovery times Figure 24: Unclamped inductive load test circuit Figure 25: Unclamped inductive waveform Figure 26: Switching time waveform DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 27: D²PAK (TO-263) type A package outline DocID024348 Rev 4 11/23 Package information STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Table 10: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/23 Typ. 0.40 0° DocID024348 Rev 4 8° STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package information Figure 28: D²PAK (TO-263) type A recommended footprint (dimensions are in mm) DocID024348 Rev 4 13/23 Package information 4.2 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 TO-220FP package information Figure 29: TO-220FP package outline 7012510_Rev_12_B 14/23 DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package information Table 11: TO-220FP package mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024348 Rev 4 15/23 Package information 4.3 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 TO-220 type A packing information Figure 30: TO-220 type A package outline 16/23 DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package information Table 12: TO-220 type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 D1 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID024348 Rev 4 17/23 Package information 4.4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 TO-247 package information Figure 31: TO-247 package outline 0075325_8 18/23 DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package information Table 13: TO-247 package mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 DocID024348 Rev 4 5.50 5.70 19/23 Package information 4.5 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 D²PAK type A packing information Figure 32: D²PAK type A tape outline 20/23 DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package information Figure 33: D²PAK type A reel outline Table 14: D²PAK type A tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 Max. 330 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024348 Rev 4 13.2 26.4 30.4 21/23 Revision history 5 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Revision history Table 15: Document revision history Date Revision 07-Mar-2013 1 First release. 27-Mar-2013 2 Updated Figure 1: Internal schematic diagram. Minor text changes. Document status promoted from preliminary data to production data. 15-Apr-2013 3 – Modified: EAS value, the entire typical values on Table 5, 6 and 7 – Inserted: Section 2.1: Electrical characteristics (curves) – Minor text changes 4 Added: TO-247 package. Updated title, features and description. Updated Figure 13: "Static drain-source on-resistance". Updated Table 2: "Absolute maximum ratings", Table 5: "On/offstate", Table 6: "Dynamic" and Table 8: "Source-drain diode". Added Figure 8: "Safe operating area for TO-247" and Figure 9: "Thermal impedance for TO-247". Updated Section 4.4: "TO-247 package information". Minor text changes. 25-Sep-2017 22/23 Changes DocID024348 Rev 4 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID024348 Rev 4 23/23