STF16N65M5

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB TAB VDSS @ TJmax Type STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 RDS(on) max ID 3 1 3 12 2 TO-220FP 710 V < 0.279 Ω I²PAK 3 1 2 TO-220 12 A TAB 3 2 ■ Worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested 1 IPAK Figure 1. 3 TO-247 Internal schematic diagram $4!" Applications ■ 2 1 Switching applications Description ' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. !-V Device summary Order codes STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 October 2011 3 Marking Package Packaging 16N65M5 TO-220FP I²PAK TO-220 IPAK TO-247 Tube Doc ID 15210 Rev 4 1/20 www.st.com 20 Contents STF/I/P/U/W16N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 .............................................. 9 Doc ID 15210 Rev 4 STF/I/P/U/W16N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, I²PAK, IPAK, TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Unit 650 V ± 25 V (1) 12 A ID Drain current (continuous) at TC = 25 °C 12 ID Drain current (continuous) at TC = 100 °C 7.3 (1) 7.3 A (1) 48 A 25 W IDM (2) PTOT Drain current (pulsed) 48 Total dissipation at TC = 25 °C 90 IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ Peak diode recovery voltage slope 15 V/ns dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220FP I²PAK TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junctionambient max Tl 5 Maximum lead temperature for soldering purpose Doc ID 15210 Rev 4 IPAK TO-247 1.38 62.5 100 300 °C/W 50 °C/W °C 3/20 Electrical characteristics 2 STF/I/P/U/W16N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 650 V IDSS VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.230 0.279 Ω Min. Typ. Max. Unit - 1250 30 3 - pF pF pF - 100 - pF - 30 - pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol Ciss Coss Crss 3 VGS = 10 V, ID = 6 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain - 2 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 6 A, VGS = 10 V (see Figure 20) - 31 8 12 - nC nC nC 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/20 Doc ID 15210 Rev 4 STF/I/P/U/W16N65M5 Table 6. Symbol td (v) tr (v) tf (i) tc(off) Table 7. Electrical characteristics Switching times Parameter Test conditions VDD = 400 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) (see Figure 24) Voltage delay time Voltage rise time Current fall time Crossing time Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 25 7 6 8 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 12 48 A A ISD = 12 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V (see Figure 24) - 300 3.5 23 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 24) - 350 4 24 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15210 Rev 4 5/20 Electrical characteristics STF/I/P/U/W16N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 5. Thermal impedance for TO-220, I²PAK, TO-247 Figure 7. Thermal impedance for IPAK AM08611v1 1 D S( on ) 10 O Li per m at ite io d ni by n m this ax a R rea is ID (A) 10µs 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-220, I²PAK, TO-247 AM08610v1 ) on 10µs D S( 10 O Li per m at ite io d ni by n m this ax a R rea is ID (A) 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. 10 1 100 Safe operating area for IPAK AM08609v1 on ) 10µs D S( O Li per m at ite io d ni by n m this ax a R rea is ID (A) 10 VDS(V) 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 6/20 1 10 100 VDS(V) Doc ID 15210 Rev 4 STF/I/P/U/W16N65M5 Figure 8. Electrical characteristics Output characteristics ID (A) Figure 9. AM03178v1 VGS=10V Transfer characteristics AM03179v1 ID (A) VDS=10V 7.5V 20 20 7V 15 15 6.5V 10 10 6V 5 5 5.5V 0 0 2 6 4 8 10 12 14 16 18 0 VDS(V) Figure 10. Normalized BVDSS vs temperature AM03187v1 BVDSS (norm) ID=1mA 3 1.05 0.240 1.03 0.235 1.01 0.230 0.99 0.225 0.97 0.220 0.95 0.215 25 50 75 100 TJ(°C) Figure 12. Output capacitance stored energy AM03312v1 Eoss (µJ) 7 8 9 VGS(V) AM03181v1 RDS(on) (Ω) 0.245 0 7 6 Figure 11. Static drain-source on resistance 1.07 0.93 -50 -25 5 4 0.210 0 VGS=10V 4 2 8 6 10 12 ID(A) Figure 13. Capacitance variations AM03183v1 C (pF) 10000 6 5 Ciss 1000 4 100 3 Coss 2 10 Crss 1 0 0 100 200 300 400 500 600 VDS(V) Doc ID 15210 Rev 4 1 0.1 1 10 100 VDS(V) 7/20 Electrical characteristics STF/I/P/U/W16N65M5 Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs temperature AM03182v1 VGS (V) (norm) VDD=520V ID=6A 12 AM03185v1 RDS(on) VGS=10V ID=6.5V 2.1 500 VDS 1.9 10 400 8 1.7 1.5 300 6 200 4 1.3 1.1 0.9 100 2 0 0 5 10 15 20 25 30 35 Qg(nC) Figure 16. Normalized gate threshold voltage vs temperature AM03184v1 VGS(th) (norm) ID=250µA 1.10 0.7 0.5 -50 0 50 TJ(°C) 100 Figure 17. Source-drain diode forward characteristics AM03186v1 VSD (V) 1.0 TJ=-25°C 0.9 1.00 0.8 0.90 TJ=25°C 0.7 TJ=150°C 0.6 0.80 0.5 0.4 0.70 -50 50 0 TJ(°C) 100 Figure 18. Switching losses vs gate resistance (1) AM10359v1 E (μJ) 100 Eon 80 60 Eoff 40 20 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/20 Doc ID 15210 Rev 4 0 5 10 ISD(A) STF/I/P/U/W16N65M5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 24. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 15210 Rev 4 Tfall Tcross --over AM05540v1 9/20 Package mechanical data 4 STF/I/P/U/W16N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/20 Doc ID 15210 Rev 4 STF/I/P/U/W16N65M5 Table 8. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 25. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 15210 Rev 4 11/20 Package mechanical data Table 9. STF/I/P/U/W16N65M5 I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H 12/20 Doc ID 15210 Rev 4 STF/I/P/U/W16N65M5 Table 10. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15210 Rev 4 13/20 Package mechanical data STF/I/P/U/W16N65M5 Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S 14/20 Doc ID 15210 Rev 4 STF/I/P/U/W16N65M5 Table 11. Package mechanical data IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 15210 Rev 4 1.00 15/20 Package mechanical data STF/I/P/U/W16N65M5 Figure 28. IPAK (TO-251) drawing 0068771_H 16/20 AM09214V1 Doc ID 15210 Rev 4 STF/I/P/U/W16N65M5 Table 12. Package mechanical data TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 15210 Rev 4 17/20 Package mechanical data STF/I/P/U/W16N65M5 Figure 29. TO-247 drawing 0075325_F 18/20 Doc ID 15210 Rev 4 STF/I/P/U/W16N65M5 5 Revision history Revision history Table 13. Document revision history Date Revision 12-Feb-2009 1 First release. 21-Oct-2010 2 – Document status promoted from preliminary data to datasheet. – Added new package, mechanical data: I²PAK. – Removed DPAK, D²PAK packages and mechanical data. 10-Feb-2011 3 Modified RDS(on) value (see Table 4 and Figure 11). 4 Modified Section 2.1: Electrical characteristics (curves): – Figure 8, Figure 9, Figure 10, Figure 11, Figure 15 and Figure 16 – Added Figure 18 Updated RDS(on) value in Table 4 Updated values in Table 6 Minor text changes. 13-Oct-2011 Changes Doc ID 15210 Rev 4 19/20 STF/I/P/U/W16N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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