STF5N95K5

STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK Datasheet - production data Features TAB Order code 2 3 1 ID 950 V 3 TO-220FP Ptot 70 W STF5N95K5 TAB 1 RDS(on) max. STD5N95K5 DPAK 2 VDS 2.5 Ω 25 W 3.5 A STP5N95K5 70 W STU5N95K5 70 W 3 2 TAB 1 TO-220 1 2 3 IPAK      Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking STD5N95K5 STF5N95K5 STP5N95K5 5N95K5 STU5N95K5 January 2017 Package Packing DPAK Tape and reel TO-220FP TO-220 Tube IPAK DocID024639 Rev 4 This is information on a product in full production. 1/26 www.st.com Contents STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/26 4.1 DPAK (TO-252) type A2 package information................................. 11 4.2 DPAK (TO-252) type C2 package information ................................ 14 4.3 DPAK (TO-252) packing information ............................................... 17 4.4 TO-220FP package information ...................................................... 19 4.5 TO-220 type A package information................................................ 21 4.6 IPAK (TO-251) type A package information .................................... 23 Revision history ............................................................................ 25 DocID024639 Rev 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Value Symbol VGS Parameter DPAK, TO-220, IPAK Gate-source voltage ID ±30 Drain current (continuous) at TC = 25 °C ID Unit TO-220FP Drain current (continuous) at TC = 100 °C IDM(2) Drain current pulsed PTOT Total dissipation at TC = 25 °C V 3.5 3.5 (1) A 2.2 (1) A 2.2 14 A 25 70 W dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) VISO Tj 2500 Operating junction temperature range Tstg -55 to 150 Storage temperature range V °C Notes: (1)Limited (2)Pulse (3)I SD (4)V by maximum junction temperature. width limited by safe operating area. ≤ 3.5 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS DS ≤ 640 V Table 3: Thermal data Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) 1.47 Thermal resistance junction-pcb TO-220FP TO-220 5 1.47 62.5 IPAK °C/W 100 50 °C/W °C/W Notes: (1)When mounted on 1 inch² FR-4, 2 Oz copper board Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 70 mJ DocID024639 Rev 4 3/26 Electrical characteristics 2 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol Parameter V(BR)DSS Drain-source breakdown voltage Test conditions Min. VGS = 0 V, ID = 1 mA 950 Typ. Max. Unit V VDS = 950 V, VGS = 0 V 1 µA IDSS Zero gate voltage drain current VDS = 950 V, VGS = 0 V TC = 125 °C(1) 50 µA IGSS Gate body leakage current VGS = ±20 V, VDS = 0 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 1.5 A 3 4 5 V 2 2.5 Ω Min. Typ. Max. Unit - 220 - pF - 17 - pF - 1 - pF - 30 - pF - 11 - pF Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Ciss Parameter Test conditions Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related VGS = 0 V, VDS = 0 to 760 V Rg Intrinsic gate resistance f = 1 MHz open drain - 17 - Ω Qg Total gate charge - 12.5 - nC Qgs Gate-source charge - 2 - nC Qgd Gate-drain charge VDD = 760 V, ID = 3.5 A VGS= 10 V (see Figure 19: "Test circuit for gate charge behavior") - 10 - nC Notes: (1)C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. (2)C o(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/26 DocID024639 Rev 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Electrical characteristics Table 7: Switching times Symbol Parameter td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time Test conditions Min. Typ. Max. Unit VDD= 475 V, ID = 1.75 A, RG = 4.7 Ω VGS = 10 V (see Figure 18: "Test circuit for resistive load switching times" and Figure 23: "Switching time waveform") - 12 - ns - 16 - ns - 32 - ns - 25 - ns Min. Typ. Max. Unit Table 8: Source-drain diode Symbol Parameter Test conditions ISD Source-drain current - 3.5 A ISDM Source-drain current (pulsed) - 14 A VSD(1) Forward on voltage ISD = 3.5 A, VGS = 0 V - 1.5 V trr Reverse recovery time - 330 ns Qrr Reverse recovery charge - 2.2 µC IRRM Reverse recovery current ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 13 A ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 525 ns - 3.2 µC - 12 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol V (BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS= ± 1 mA, ID= 0 A Min Typ. Max Unit 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry. DocID024639 Rev 4 5/26 Electrical characteristics 2.1 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Electrical characteristics (curves) Figure 2: Safe operating area for DPAK and IPAK Figure 3: Thermal impedance for DPAK and IPAK Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP Figure 6: Safe operating area for TO-220 Figure 7: Thermal impedance for TO-220 CG20930 K δ = 0.5 δ = 0.2 δ = 0.1 10-1 Z Zthth == kk R Rthj-C thj-C δδ == ttp // Ƭ Ƭ p δ = 0.05 δ = 0.02 δ = 0.01 tp SINGLE PULSE 10-2 10-5 6/26 DocID024639 Rev 4 10-4 10-3 10-2 ƬƬ 10-1 tp(s) STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Electrical characteristics Figure 8: Output characteristics Figure 9: Transfer characteristics Figure 10: Gate charge vs gate-source voltage Figure 11: Static drain-source on-resistance VDD = 760 V ID = 3.5 A Figure 12: Capacitance variations Figure 13: Output capacitance stored energy DocID024639 Rev 4 7/26 Electrical characteristics STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Figure 14: Normalized gate threshold voltage vs temperature Figure 15: Normalized V(BR)DSS vs temperature Figure 16: Normalized on-resistance vs temperature Figure 17: Source-drain diode forward characteristics 8/26 DocID024639 Rev 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 3 Test circuits Test circuits Figure 18: Test circuit for resistive load switching times Figure 19: Test circuit for gate charge behavior Figure 20: Test circuit for inductive load switching and diode recovery times Figure 21: Unclamped inductive load test circuit Figure 22: Unclamped inductive waveform Figure 23: Switching time waveform DocID024639 Rev 4 9/26 Package information 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/26 DocID024639 Rev 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 4.1 Package information DPAK (TO-252) type A2 package information Figure 24: DPAK (TO-252) type A2 package outline 0068772_type-A2_rev21 DocID024639 Rev 4 11/26 Package information STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Table 10: DPAK (TO-252) type A2 mechanical data mm Dim. Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 12/26 Typ. 5.10 5.25 6.60 1.00 0.20 0° DocID024639 Rev 4 8° STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Package information Figure 25: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm) DocID024639 Rev 4 13/26 Package information 4.2 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 DPAK (TO-252) type C2 package information Figure 26: DPAK (TO-252) type C2 package outline 14/26 DocID024639 Rev 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Package information Table 11: DPAK (TO-252) type C2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.10 5.46 6.20 5.60 6.60 6.70 5.50 2.90 REF 0.90 L3 L4 5.33 1.25 0.51 BSC 0.60 L6 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° DocID024639 Rev 4 8° 15/26 Package information STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Figure 27: DPAK (TO-252) type C2 recommended footprint (dimensions are in mm) FP_0068772_21 16/26 DocID024639 Rev 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 4.3 Package information DPAK (TO-252) packing information Figure 28: DPAK (TO-252) tape outline DocID024639 Rev 4 17/26 Package information STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Figure 29: DPAK (TO-252) reel outline Table 12: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 18/26 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID024639 Rev 4 18.4 22.4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 4.4 Package information TO-220FP package information Figure 30: TO-220FP package outline DocID024639 Rev 4 19/26 Package information STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Table 13: TO-220FP package mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 20/26 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024639 Rev 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 4.5 Package information TO-220 type A package information Figure 31: TO-220 type A package outline DocID024639 Rev 4 21/26 Package information STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Table 14: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 D1 22/26 Typ. 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID024639 Rev 4 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 4.6 Package information IPAK (TO-251) type A package information Figure 32: IPAK (TO-251) type A package outline DocID024639 Rev 4 23/26 Package information STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Table 15: IPAK (TO-251) type A package mechanical data mm Dim. Min. Typ. 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 24/26 Max. A 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID024639 Rev 4 1.00 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 5 Revision history Revision history Table 16: Document revision history Date Revision 08-May-2013 1 First release. 18-Sep-2013 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). Updated DPAK mechanical data. 25-Sep-2013 3 Inserted Figure 17: Source-drain diode forward characteristics. 4 Added IPAK package. Modified title, features and description on cover page. Modified Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 5: "On/off-state". Modified Figure 11: "Static drain-source on-resistance". Updated Section 4: "Package information". Minor text changes. 04-Jan-2017 Changes DocID024639 Rev 4 25/26 STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 26/26 DocID024639 Rev 4